Infineon Technologies BAT1502ELE6327XTMA1

Overview

BAT1502ELE6327XTMA1 from Infineon is a single silicon RF Schottky diode with N-type low-barrier structure, integrated on-chip guard ring for over-voltage protection, 0.2 pF junction capacitance at 0 V/1 MHz, 0.4 nH series inductance, and 0.25 V forward voltage at 1 mA - optimized for mixer and detector functions up to 12 GHz in mobile RF front-ends.

For engineers reviewing the BAT1502ELE6327XTMA1 datasheet, BAT1502ELE6327XTMA1 pinout, BAT1502ELE6327XTMA1 application, or BAT1502ELE6327XTMA1 equivalent, key selection criteria include RF insertion loss at 2–6 GHz, reverse recovery time under small-signal AC conditions, thermal resistance (RthJS = 660 K/W), and compatibility with 0402 footprint reflow profiles.

Technical Context

This diode operates as a passive nonlinear element in high-frequency signal paths, leveraging its low barrier height to minimize forward conduction loss while maintaining sub-0.3 V VF across 1–10 mA DC bias. Its TSLP-2-19 package minimizes parasitic inductance and enables stable impedance matching above 5 GHz.

The integrated guard ring ensures robustness against transient over-voltage events without external clamping components, and the 0.2 pF C_j at 0 V supports wideband operation from UHF through K-band (up to 12 GHz) in zero-bias detector configurations.

Key Specifications

Pinout & Package

TSLP-2-19 surface-mount package (1.0 mm × 0.6 mm × 0.31 mm) with 0402 footprint compatibility and leadless, single-diode configuration. Moisture sensitivity level (MSL) 1 per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky diode applications.

Compared with SKY13370-374LF and BAR63-03W, BAT1502ELE6327XTMA1 delivers superior 12 GHz bandwidth headroom and intrinsic over-voltage resilience - making it optimal for miniaturized, high-reliability mobile RF detectors where layout area and ESD robustness are constrained.

Availability

BAT1502ELE6327XTMA1 is available at Aetrix Electronics and suitable for GPS/GNSS receivers, 5G NR front-end modules, and Wi-Fi 6E client radios requiring stable component supply with full traceability and industrial-grade qualification.

Supply support for BAT1502ELE6327XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BAT15 series targets high-frequency signal conditioning in wireless infrastructure and mobile devices, emphasizing low parasitics, ESD-hardened design, and 0402-compatible packaging for next-generation RF front-ends.

FAQ

What is the maximum RF input power this diode can handle in detector mode?

At 25 °C ambient and with proper heat sinking, BAT1502ELE6327XTMA1 supports up to +13 dBm (20 mW) average RF input power in zero-bias detector configurations. This limit derives from its 100 mW total power dissipation rating and 660 K/W thermal resistance - exceeding this causes junction temperature rise beyond 150 °C, risking parametric drift or failure.

Does this diode require DC bias for mixer operation?

No - BAT1502ELE6327XTMA1 is routinely used in zero-bias mixer configurations due to its low 0.25 V forward voltage and 0.2 pF junction capacitance. Applying DC bias increases conversion gain marginally but degrades noise figure and adds complexity; most reference designs for 2–6 GHz mixers operate it at 0 V DC.

Is the TSLP-2-19 package compatible with standard 0402 pick-and-place equipment?

Yes - the TSLP-2-19 package has identical 1.0 mm × 0.6 mm footprint and terminal geometry to JEDEC-standard 0402 components. It uses the same nozzle vacuum profile and vision alignment tolerances, though reflow profile must respect its 0.31 mm height and MSL 1 moisture sensitivity classification.

How does the integrated guard ring affect RF performance at 12 GHz?

The on-chip guard ring adds negligible parasitic capacitance (<0.02 pF) and no measurable inductance at 12 GHz, as confirmed by Infineon's S-parameter characterization. Its primary impact is reliability - it suppresses edge breakdown during ESD events without degrading small-signal RF parameters like insertion loss or return loss up to 12 GHz.