Infineon Technologies BAT1502ELSE6327XTSA1

Overview

BAT1502ELSE6327XTSA1 from Infineon is a single silicon RF Schottky diode optimized for mixer and detector functions up to 12 GHz, featuring 0.2 pF junction capacitance at 0 V, 0.2 nH series inductance, and 0.25 V forward voltage at 1 mA. It integrates an on-chip guard ring for over-voltage protection and is housed in the ultra-compact TSSLP-2-3 (0201) package.

For engineers reviewing the BAT1502ELSE6327XTSA1 datasheet, BAT1502ELSE6327XTSA1 pinout, BAT1502ELSE6327XTSA1 application, or BAT1502ELSE6327XTSA1 equivalent, key selection criteria include RF insertion loss at 12 GHz, low-barrier conduction for weak-signal detection, junction capacitance stability under reverse bias, and thermal resistance of 675 K/W to soldering point.

Technical Context

This N-type low-barrier Schottky diode operates as a passive nonlinear element in RF signal paths, where its low VF and low C enable high conversion efficiency in fundamental mixers and zero-bias detectors. The integrated guard ring provides robustness against transient over-voltage without external components.

Designed for DC–12 GHz operation, it delivers stable differential forward resistance of 8 Ω (typ.) at 10 mA and maintains sub-5 μA reverse leakage at 1 V VR. Its TSSLP-2-3 package minimizes parasitic inductance and enables high-density RF layout with 0.62 mm × 0.32 mm footprint.

Key Specifications

Pinout & Package

The BAT1502ELSE6327XTSA1 uses the TSSLP-2-3 surface-mount package (0.62 mm × 0.32 mm × 0.31 mm), a leadless 2-terminal device with 0201 footprint compatibility and index marking for orientation. Pin 1 is cathode, Pin 2 is anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky diode applications.

Compared with BAT1502ELSE6327XTSA1, SMS7621-011 trades lower capacitance for higher forward voltage-favorable for high-frequency filtering but less efficient in zero-bias detection; MADP-000907-14150T offers better sensitivity below 6 GHz but introduces 0.2 nH more inductance, limiting Ka-band usability.

Availability

BAT1502ELSE6327XTSA1 is available at Aetrix Electronics and suitable for 5G NR front-end modules, Wi-Fi 6E power monitoring circuits, and UWB radar receivers requiring stable component supply with full traceability and industrial-grade qualification.

Supply support for BAT1502ELSE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification infrastructure.

The BAT15-02ELS belongs to Infineon's RF Schottky diode product line, engineered specifically for high-frequency mixer and detector functions in space-constrained wireless infrastructure and mobile devices.

FAQ

What is the maximum RF input power the BAT1502ELSE6327XTSA1 can handle in detector mode?

The device has a 4 V reverse breakdown rating and 100 mW total power dissipation limit. At 1 mA forward current and 0.25 V VF, it dissipates only 0.25 mW - meaning RF power handling is governed by peak voltage swing. For safe operation, peak RF voltage must remain below 4 V to avoid avalanche, corresponding to ~+20 dBm into 50 Ω at 12 GHz with proper impedance matching.

Does the integrated guard ring affect RF performance at 10 GHz?

No - the guard ring is electrically isolated from the active Schottky junction and implemented as a floating P+ diffusion surrounding the anode. Measurement data confirms no measurable impact on C, VF, or RF insertion loss up to 12 GHz; its sole function is ESD and transient over-voltage protection.

Can BAT1502ELSE6327XTSA1 be used in series-connected dual-diode configurations?

Yes - the TSSLP-2-3 package supports manual or automated placement in series or anti-series arrangements. However, due to its single-junction construction, series connection requires precise thermal coupling and matching; Infineon does not characterize or guarantee matched pairs, so individual unit screening is recommended for balanced mixer designs.

Is reflow profile compatibility documented for the TSSLP-2-3 package?

Yes - Infineon provides detailed PCB assembly guidelines in "Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages" (Document ID: AN2017-07). The TSSLP-2-3 supports standard lead-free reflow with peak temperature ≤260 °C, 60-second duration above 217 °C, and ramp rates ≤3 °C/s.