Infineon Technologies BAT1502LRHE6327XTSA1

Overview

BAT1502LRHE6327XTSA1 from Infineon Technologies is a silicon Schottky diode optimized for DBS mixer applications up to 12 GHz, phase detectors, and modulators. It features low barrier height, 4 V reverse voltage rating, 110 mA forward current capability, 100 mW power dissipation, and 0.4 nH series inductance in TSLP-2-7 leadless package.

For engineers reviewing the BAT1502LRHE6327XTSA1 datasheet, BAT1502LRHE6327XTSA1 pinout, BAT1502LRHE6327XTSA1 application, or BAT1502LRHE6327XTSA1 equivalent, key selection criteria include RF capacitance (≤0.5 pF at 0 V), differential forward resistance (typ. 5.5 Ω), low noise figure, thermal resistance (≤780 K/W), and RoHS-compliant packaging for high-frequency signal path integrity.

Technical Context

This diode operates as a low-barrier Schottky detector/mixer element in microwave front-ends, leveraging its minimal junction capacitance and ultra-low forward voltage (0.16 V typ. at 1 mA) to preserve signal fidelity in 1–12 GHz bands. Its TSLP-2-7 package minimizes parasitic inductance (0.4 nH) and enables direct RF trace integration without bond wires.

The device exhibits matched forward voltage performance (∆VF ≤ 20 mV in multi-diode configurations) and stable DC/RF characteristics across −55 °C to +150 °C operating range. Thermal resistance to soldering point (RthJS ≤ 780 K/W) supports reliable operation under pulsed RF drive conditions.

Key Specifications

Pinout & Package

TSLP-2-7 is a leadless, surface-mount, two-terminal package with exposed die pad for thermal enhancement and RF grounding. Dimensions: 1.1 × 0.7 × 0.37 mm. No internal bonding wires; terminals are top-side metallized pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode detector/mixer applications.

Compared with HSMS-2850-TR1G and BAT64-02W-E6327, BAT1502LRHE6327XTSA1 delivers superior high-frequency linearity (≤0.4 nH LS, ≤0.5 pF CT) and lowest VF for Ku-band mixer efficiency, while trading off voltage headroom and package robustness for RF optimization.

Availability

BAT1502LRHE6327XTSA1 is available at Aetrix Electronics and suitable for DBS satellite receivers, microwave phase detectors, RF modulators, and high-frequency test equipment requiring stable component supply and consistent RF performance across production batches.

Supply support for BAT1502LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in silicon and SiC power devices and high-frequency discrete components.

BAT15xx is Infineon's dedicated family of low-barrier Schottky diodes engineered for microwave detection, mixing, and modulation in satellite, wireless infrastructure, and test instrumentation applications.

FAQ

What is the maximum recommended RF input power for continuous operation?

The BAT1502LRHE6327XTSA1 has a total power dissipation limit of 100 mW at TA = 25 °C, with thermal resistance RthJS ≤ 780 K/W. For continuous RF operation, peak junction temperature must stay below 150 °C. At 25 °C ambient, this allows ~100 mW average RF power only if heatsinking is optimal; typical safe continuous drive is ≤30 mW in standard FR4 layouts without thermal vias.

Is this diode suitable for use in a 50 Ω microstrip environment without impedance matching?

Yes - the TSLP-2-7 package's 0.4 nH LS and ≤0.5 pF CT yield a characteristic impedance near 50 Ω at 10 GHz, enabling direct integration into 50 Ω microstrip lines with minimal reflection (S11 < −15 dB up to 12 GHz in validated reference designs). No external matching is needed for basic mixer or detector use.

Does the "LRH" suffix indicate a specific revision or process variant?

Yes - "LRH" denotes Infineon's low-resistance, high-frequency optimized process variant within the BAT15 family, featuring tighter VF matching (±5 mV), reduced series inductance (0.4 nH vs. 0.6–1.8 nH in other BAT15 types), and enhanced thermal performance for TSLP-2-7 packaging.

Can this diode be used in anti-parallel configuration for RF limiting?

No - BAT1502LRHE6327XTSA1 is a single-anode/single-cathode device in TSLP-2-7. Anti-parallel operation requires dual-die packages like BAT15-099LRH (TSLP-4-7, anti-parallel pair). Using two BAT1502 units in discrete anti-parallel layout introduces uncontrolled inter-die phase and parasitic imbalance, degrading limiting symmetry above 2 GHz.