Infineon Technologies BAT1502LSE6433XTMA1

Overview

BAT1502LSE6433XTMA1 from Infineon is a single silicon RF Schottky diode with N-type low barrier structure, integrated on-chip guard ring for over-voltage protection, 0.2 pF junction capacitance at 0 V/1 MHz, 0.2 nH series inductance, and rated for operation up to 12 GHz in mixer and detector circuits used in automotive radar front-ends.

For engineers reviewing the BAT1502LSE6433XTMA1 datasheet, BAT1502LSE6433XTMA1 pinout, BAT1502LSE6433XTMA1 application, or BAT1502LSE6433XTMA1 equivalent, key selection criteria include RF forward voltage (0.25 V typ. @ 1 mA), reverse breakdown (4 V), thermal resistance (675 K/W), and TSSLP-2-1 package compatibility with high-frequency PCB layout constraints.

Technical Context

This diode operates as a zero-bias or low-bias RF detector/mixer element, leveraging its low barrier height to minimize turn-on voltage and maximize conversion efficiency at microwave frequencies. Its monolithic silicon construction includes an integrated guard ring to suppress edge breakdown and improve voltage ruggedness without external components.

The device is characterized in a defined test fixture per Infineon's methodology, with capacitance and inductance values measured at 1 MHz under controlled bias conditions. Performance curves confirm stable C_j (0.12–0.24 pF) across –55 °C to +125 °C ambient and <5 μA reverse leakage at 1 V VR, supporting reliable operation in temperature-cycled LiDAR and radar modules.

Key Specifications

Pinout & Package

TSSLP-2-1 surface-mount package (0.62 mm × 0.32 mm × 0.31 mm) with 0201 footprint, leadless construction, and single-anode/single-cathode terminal configuration. RoHS-compliant, halogen-free, and ESD-sensitive (Class 1C per JEDEC JS-001).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky detector applications.

Compared with BAT1502LSE6433XTMA1, MADP-000907-14150T offers lower parasitics but sacrifices miniaturization, while SMS7630-061 trades RF performance for manufacturability in standard pick-and-place lines - BAT1502LSE6433XTMA1 uniquely balances 12 GHz capability, 0201 size, and industrial reliability.

Availability

BAT1502LSE6433XTMA1 is available at Aetrix Electronics and suitable for automotive radar sensors, LiDAR receivers, and 5G mmWave test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAT1502LSE6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with leadership in silicon-based RF Schottky diodes for sensing and communications.

The BAT15 family targets high-frequency detector and mixer functions in millimeter-wave systems, emphasizing low parasitics, thermal robustness, and industrial-grade qualification for safety-critical sensing applications.

FAQ

What is the maximum RF input power this diode can handle in detector mode?

The BAT1502LSE6433XTMA1 is rated for 100 mW total power dissipation at a solder point temperature ≤82 °C. In zero-bias detector operation, practical RF input is limited to –5 dBm to –10 dBm to avoid self-heating-induced drift, given its 675 K/W thermal resistance and low thermal mass. Derating is required above 85 °C ambient.

Does this diode require DC bias for mixer operation?

No - the BAT1502LSE6433XTMA1 is optimized for zero-bias mixer and detector use due to its low 0.25 V forward voltage at 1 mA. Applying DC bias increases conversion loss and degrades noise figure above 5 GHz; typical mixer designs use it in passive mode with LO drive ≥0 dBm to ensure sufficient local oscillator injection.

How does the on-chip guard ring affect PCB layout requirements?

The integrated guard ring eliminates need for external guard traces or clearance rings around the die. Layout must still maintain ≥0.15 mm solder mask opening around both pads and avoid copper pours within 0.2 mm of pad edges to prevent parasitic capacitance increase and ensure repeatable 0.2 pF junction capacitance in production assemblies.

Is this part suitable for pulsed RF applications like time-of-flight LiDAR?

Yes - its 100 mA peak forward current rating and <100 ps recovery time support nanosecond-scale pulse detection. Pulse operation must limit duty cycle to ≤1% at 100 mA to keep average power below 10 mW, avoiding junction temperature rise beyond 125 °C per JEDEC JESD22-A115 reliability testing.