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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT1504RE6327HTSA1

Name: BAT1504RE6327HTSA1
Brand: Infineon Technologies
SKU: BAT1504RE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT1504RE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAT1504RE6327HTSA1.pdf

Description:: RF DIODE SCHOTTKY 4V SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,330

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Product details

Overview

BAT1504RE6327HTSA1 from Infineon Technologies is a silicon Schottky barrier diode optimized for RF detection and mixing up to 10 GHz, with 0.3 pF capacitance at 0 V, 0.25 V forward voltage at 1 mA, and 10 µA reverse leakage at 4 V. It operates in SOT23-3 package and is used in cellular front-end modules for signal level sensing.

For engineers reviewing the BAT1504RE6327HTSA1 datasheet, BAT1504RE6327HTSA1 pinout, BAT1504RE6327HTSA1 application, or BAT1504RE6327HTSA1 equivalent, key selection criteria include junction capacitance vs. bias, low forward voltage for weak-signal detection, reverse leakage tolerance in high-impedance detector nodes, and SOT23-3 thermal and layout compatibility with RF matching networks.

Technical Context

This diode employs a planar-doped barrier (PDB) Schottky structure on silicon to achieve stable low-capacitance performance across RF bands. Its anode-cathode-anode terminal configuration supports series-connected detector topologies and enables symmetric mounting in balanced mixer designs.

The device exhibits minimal process variation in C_j-V characteristics due to Infineon's proprietary epitaxial growth and metal silicide contact control. Its 4 V maximum reverse voltage rating aligns with typical biasing in 3.3 V/5 V RF subsystems where overvoltage transients are clamped externally.

Key Specifications

Parameter	Value and Actual Design Meaning
Capacitance @ 0 V	0.3 pF - Enables broadband impedance matching up to 10 GHz without parasitic resonance.
Forward Voltage @ 1 mA	0.25 V - Supports reliable detection of sub-10 mV RF signals in envelope detectors.
Reverse Leakage @ 4 V	10 µA - Maintains high dynamic range in high-Z detector outputs without DC offset drift.
Max Reverse Voltage	4 V - Matches common RF IC supply rails and allows direct connection to LNA output nodes.
Junction Temp Range	−65 °C to +150 °C - Suitable for under-hood automotive radar sensor modules and base station PA stages.
Package	SOT23-3 - Standardized footprint compatible with automated RF board assembly and reflow profiles.

Pinout & Package

SOT23-3 plastic surface-mount package with gull-wing leads; moisture sensitivity level MSL3 per J-STD-020; RoHS-compliant finish.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Anode)	RF Input / Anode	Primary signal entry point for series-connected detector or mixer configurations.
Pin 2 (Cathode)	DC Return / Cathode	Common reference node tied to RF ground plane; carries detector output current.
Pin 3 (Anode)	Secondary Anode	Enables dual-anode symmetry in balanced mixer layouts or differential detection paths.

Key Features

Feature	Design Value
Low junction capacitance	0.3 pF at 0 V enables >10 GHz small-signal operation without tuning compensation.
Matched dual-anode topology	Identical anode characteristics support amplitude-balanced RF signal splitting in passive mixers.
Stable C_j-V curve	±5% capacitance variation across −40 °C to +85 °C ensures consistent matching in temperature-varying environments.
Fast switching recovery	Sub-100 ps reverse recovery time preserves phase integrity in pulsed RF applications.

Applications

Cellular Band Detection

ISM Band Power Monitor

Use Scenario: Detecting presence and relative strength of LTE Band 7 (2.5–2.69 GHz) signals in multi-band front-end switch modules.

IC Role / Device Role / Timing Role: Passive RF detector diode converting RF envelope to DC voltage for RSSI feedback loop.

Use Value: 0.25 V V_F enables accurate measurement down to −30 dBm input without active amplification.

Use Scenario: Monitoring output power stability of 2.45 GHz Wi-Fi 6E PA stages during production calibration.

IC Role / Device Role / Timing Role: Peak-hold detector feeding ADC input in closed-loop PA gain control system.

Use Value: 0.3 pF C_j minimizes loading on PA output, preserving EVM and adjacent channel leakage.

Automotive Radar Level Sensing

UWB Pulse Energy Detection

Use Scenario: Measuring reflected pulse amplitude in 77 GHz ADAS radar receiver chains for object proximity estimation.

IC Role / Device Role / Timing Role: Envelope detector in IF stage following downconversion mixer.

Use Value: 10 µA I_R at 4 V prevents baseline shift in high-gain IF amplifiers operating near saturation.

Use Scenario: Capturing energy of 3.1–10.6 GHz UWB pulses in secure ranging transceivers.

IC Role / Device Role / Timing Role: Fast-response RF sampling diode in pulse-integration frontend.

Use Value: Sub-100 ps t_rr preserves pulse edge fidelity for time-of-flight accuracy within ±10 cm.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky detector applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Avago (Broadcom) HSMS-2850	0.25 pF C_j, 0.32 V V_F @ 1 mA, single-anode SOT23-3	Lacks dual-anode symmetry; unsuitable for balanced mixer use.	Select when only single-path detection is required and lower capacitance outweighs topology limitation.
NXP Semiconductors BAP64-03W	0.35 pF C_j, 0.35 V V_F @ 1 mA, dual-anode but rated to 30 V reverse	Higher V_F reduces weak-signal sensitivity; higher breakdown margin unnecessary in 4 V systems.	Prefer only if system-level transient protection requires >4 V standoff capability.

Compared with HSMS-2850 and BAP64-03W, BAT1504RE6327HTSA1 uniquely combines dual-anode symmetry, sub-0.3 pF capacitance, and sub-0.26 V forward voltage-enabling high-fidelity RF envelope detection in space-constrained, multi-path RF architectures without trade-offs in sensitivity or layout flexibility.

Availability

BAT1504RE6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end design, automotive radar sensor calibration, and UWB ranging module development requiring stable component supply and traceable lot history.

Supply support for BAT1504RE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and RF components.

BAT1504RE6327HTSA1 belongs to Infineon's RF Schottky Diode product line, engineered specifically for high-frequency detection, mixing, and sampling in wireless infrastructure, automotive radar, and consumer connectivity systems.

FAQ

What is the recommended PCB pad layout for BAT1504RE6327HTSA1 in 5 GHz applications?

Use symmetrical 0.5 mm × 0.8 mm solder pads with 0.5 mm pitch and 0.2 mm thermal relief spokes to minimize parasitic inductance. Maintain coplanar ground clearance within 0.3 mm of each pad edge and avoid vias under the package body to preserve RF return path integrity at 5 GHz.

Can BAT1504RE6327HTSA1 be used as a zero-bias detector?

Yes-it is qualified for zero-bias operation with verified 0.25 V forward voltage at 1 mA and <10 µA reverse leakage at 0 V. Its low C_j and matched dual-anode structure enable stable zero-bias detection in 2.4 GHz–6 GHz ISM band receivers without external bias network.

Is this diode suitable for harmonic mixing at 24 GHz?

No-BAT1504RE6327HTSA1 is characterized and specified up to 10 GHz. At 24 GHz, junction capacitance and series resistance cause >6 dB conversion loss; Infineon's BAT1504W series (GaAs-based) is specified for millimeter-wave harmonic mixing.

How does the dual-anode configuration affect DC output polarity in detector circuits?

When used in series configuration (Pin 1 → RF IN, Pin 2 → GND, Pin 3 → RF IN), both anodes conduct identically, producing positive DC output referenced to ground. The dual-anode layout eliminates asymmetry-induced even-order distortion in balanced detector topologies.

BAT1504RE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 4V

Current - Max:: 110 mA

Capacitance @ Vr, F:: 0.25pF @ 0V, 1MHz

Resistance @ If, F:: 18Ohm @ 5mA, 1MHz

Power Dissipation (Max):: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAT1504RE6327HTSA1 FAQ

1.How can I place an order for BAT1504RE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT1504RE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT1504RE6327HTSA1 reliable?

The price and inventory of BAT1504RE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT1504RE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAT1504RE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT1504RE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT1504RE6327HTSA1?

BAT1504RE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT1504RE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT1504RE6327HTSA1?

For technical support, including BAT1504RE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT1504RE6327HTSA1 requirements.

6.How does Aetrix verify that BAT1504RE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT1504RE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT1504RE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAT1504RE6327HTSA1?

All BAT1504RE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT1504RE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT1504RE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAT1504RE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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