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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT1504WE6327BTSA1

Name: BAT1504WE6327BTSA1
Brand: Infineon Technologies
SKU: BAT1504WE6327BTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT1504WE6327BTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAT1504WE6327BTSA1.pdf

Description:: DIODE SCHOTTKY 4V 100MW SOT323-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,006

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Product details

Overview

BAT1504WE6327BTSA1 from Infineon Technologies is a silicon Schottky diode optimized for DBS mixer applications up to 12 GHz, phase detectors, and modulators; features low noise figure, 4 V reverse voltage rating, 110 mA forward current capability, and 0.32 V typical forward voltage at 10 mA; used in satellite TV front-end downconverters.

For engineers reviewing the BAT1504WE6327BTSA1 datasheet, BAT1504WE6327BTSA1 pinout, BAT1504WE6327BTSA1 application, or BAT1504WE6327BTSA1 equivalent, key selection criteria include RF capacitance (0.35–0.5 pF at 0 V), differential forward resistance (5.5 Ω typ.), thermal resistance (820 K/W), and SOT323 package compatibility with high-frequency PCB layouts.

Technical Context

This low-barrier Schottky diode employs a planar silicon structure with minimized series inductance (1.4 nH) to preserve RF performance through X-band frequencies. Its low-noise design targets signal detection and mixing where minimal added noise and fast switching are critical.

The device operates as a single-anode, common-cathode configuration in SOT323 package, supporting DC biasing and RF coupling in balanced mixer topologies. Its 0.32 V VF at 10 mA enables efficient low-voltage local oscillator drive while maintaining low power dissipation (100 mW).

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (VR)	4 V - maximum blocking voltage before breakdown; sets usable RF swing limit in mixer diodes
Forward Voltage (VF)	0.32 V typ. @ 10 mA - enables low-power LO drive and minimizes DC offset in detector circuits
Diode Capacitance (CT)	0.35–0.5 pF @ 0 V, 1 MHz - determines impedance match and bandwidth in 12 GHz mixers
Differential Forward Resistance (RF)	5.5 Ω typ. - governs conversion loss and insertion loss in passive mixer designs
Thermal Resistance (RthJS)	820 K/W - defines junction-to-solder-point temperature rise under 100 mW dissipation
Forward Current (IF)	110 mA max - supports pulsed LO drive and transient handling without thermal runaway

Pinout & Package

Package: SOT323 - surface-mount, leaded plastic package with 1.3 mm × 0.8 mm footprint, optimized for RF layout with short internal leads and controlled parasitics.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF signal input / LO injection node	Low-series-inductance connection point for high-frequency signal routing; requires direct microstrip coupling
Cathode	Common reference / RF ground return	Shared cathode terminal enables balanced configurations; must be low-impedance RF ground path
Case / Exposed Pad	Thermal and RF ground	Not electrically isolated; serves as primary heat path and RF shield anchor in PCB layout

Key Features

Feature	Design Value
Low barrier height	Enables sub-0.35 V forward conduction for sensitive RF detection and low-distortion mixing
Low noise figure	Minimizes added noise in satellite LNB front-ends operating near thermal noise floor
ESD-sensitive handling	Requires IEC 61340-5-1 compliant handling to prevent gate oxide damage during assembly
Pb-free RoHS compliance	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C)

Applications

Satellite TV LNB Mixers

Phase-Locked Loop Detectors

Use Scenario: Downconversion of 9.75–10.75 GHz satellite signals to 950–2150 MHz IF in low-noise block converters.

IC Role / Device Role / Timing Role: Passive mixer diode in double-balanced topology; provides nonlinear mixing function without bias circuitry.

Use Value: 12 GHz operation and 0.32 V VF enable high conversion gain and low LO leakage in compact LNB modules.

Use Scenario: Zero-crossing detection in analog PLL frequency synthesizers for clock recovery.

IC Role / Device Role / Timing Role: High-speed phase comparator element converting phase difference into DC error voltage.

Use Value: Low RF and DC parasitics ensure accurate phase comparison up to 1 GHz reference inputs.

RF Modulator Front-Ends

High-Frequency Test Probes

Use Scenario: I/Q modulation in Ku-band wireless backhaul transmitters using double-balanced ring modulators.

IC Role / Device Role / Timing Role: Switching element in ring modulator core; toggled by LO to impose baseband onto RF carrier.

Use Value: 5.5 Ω RF and 0.35 pF CT support wide instantaneous bandwidth and flat group delay across 10–12 GHz.

Use Scenario: On-wafer RF probing of GaAs MMICs and SiGe amplifiers at microwave frequencies.

IC Role / Device Role / Timing Role: Calibration diode in probe station reference path for S-parameter de-embedding.

Use Value: Matched VF and CT across production lots ensure traceable 12 GHz calibration accuracy within ±0.5 dB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
HSMS-2850	Higher CT (0.65 pF), higher VF (0.45 V), same SOT23 package	Lower frequency limit (up to 6 GHz); less suitable for 12 GHz DBS	Select when cost sensitivity outweighs X-band performance needs
BAT64-04W	Lower VR (3 V), lower IF (75 mA), identical SOT323 footprint	Reduced LO drive headroom; limited to sub-8 GHz modulators	Choose for legacy designs requiring footprint compatibility but relaxed RF specs

Compared with HSMS-2850 and BAT64-04W, BAT1504WE6327BTSA1 delivers superior 12 GHz mixing efficiency due to its lower CT and VF, making it the preferred choice for next-generation satellite receiver front-ends where noise figure and conversion loss are critical.

Availability

BAT1504WE6327BTSA1 is available at Aetrix Electronics and suitable for satellite communications receivers, RF test equipment, and high-frequency modulator designs requiring stable component supply and consistent RF performance across production batches.

Supply support for BAT1504WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

BAT1504WE6327BTSA1 belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for low-noise RF mixing, detection, and modulation in satellite, test, and wireless infrastructure systems.

FAQ

What is the maximum operating frequency for BAT1504WE6327BTSA1?

The device is characterized for use up to 12 GHz in DBS mixer applications, supported by its 0.35–0.5 pF capacitance and 5.5 Ω differential resistance. Performance beyond 12 GHz is not specified in the official datasheet, and degradation in conversion loss and noise figure occurs above this range.

Is BAT1504WE6327BTSA1 suitable for DC-coupled applications?

No - it is not recommended for DC-coupled signal paths due to its low 4 V reverse voltage rating and lack of integrated protection. It is designed for AC-coupled RF/microwave signal processing where reverse bias remains below 4 V and ESD transients are managed externally.

How does the SOT323 package affect RF layout?

The SOT323 package provides short internal lead lengths (1.4 nH series inductance) and defined pad geometry, enabling repeatable microstrip transitions. Layout best practices include 50 Ω coplanar waveguide routing, grounded coplanar gaps under the package, and minimized stub length to preserve 12 GHz impedance match.

Does BAT1504WE6327BTSA1 require external biasing in mixer circuits?

No - it operates as an unpowered passive element in double-balanced mixer topologies. The low 0.32 V forward voltage allows self-biasing from LO signal amplitude; no external DC bias network is needed, reducing component count and parasitic loading.

BAT1504WE6327BTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 4V

Current - Max:: 110 mA

Capacitance @ Vr, F:: 0.35pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT323

BAT1504WE6327BTSA1 FAQ

1.How can I place an order for BAT1504WE6327BTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT1504WE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT1504WE6327BTSA1 reliable?

The price and inventory of BAT1504WE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT1504WE6327BTSA1 is usually 5 days.

3.What payment methods are accepted for BAT1504WE6327BTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT1504WE6327BTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT1504WE6327BTSA1?

BAT1504WE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT1504WE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT1504WE6327BTSA1?

For technical support, including BAT1504WE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT1504WE6327BTSA1 requirements.

6.How does Aetrix verify that BAT1504WE6327BTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT1504WE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT1504WE6327BTSA1 meets industry standards.

7.What is the process for return or replacement of BAT1504WE6327BTSA1?

All BAT1504WE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT1504WE6327BTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT1504WE6327BTSA1 part is unused and in its original packaging.

Return procedure for BAT1504WE6327BTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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