Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BAT1504WH2110XTSA1

Part No.:
BAT1504WH2110XTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT1504WH2110XTSA1.pdf
Description:
RF DIODES PG-SOT323-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,062

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAT1504WH2110XTSA1 from Infineon is a silicon RF Schottky diode pair in SOT323-3 package, configured as two series-connected N-type low-barrier diodes with on-chip guard ring for over-voltage protection. It delivers 0.25 V forward voltage at 10 mA, 0.3 pF junction capacitance at 1 MHz, and 1.4 nH series inductance-enabling high-frequency mixer and detector operation up to 12 GHz in radar and telematics systems.

For engineers reviewing the BAT1504WH2110XTSA1 datasheet, BAT1504WH2110XTSA1 pinout, BAT1504WH2110XTSA1 application, or BAT1504WH2110XTSA1 equivalent, key selection criteria include reverse voltage rating (4 V), forward voltage matching (≤20 mV), differential forward resistance (5.8 Ω), and thermal resistance (700 K/W) under DC operation at TS ≤ 80 °C.

Technical Context

This dual-diode configuration operates as a matched series pair optimized for RF signal rectification and frequency conversion. Its low barrier height enables sub-0.3 V turn-on, while integrated guard ring structure enhances ESD robustness and voltage transient tolerance beyond standard Schottky devices.

The device is characterized in test fixtures per JEDEC JESD22-A108, qualified for industrial temperature range (−55 °C to +150 °C), and exhibits stable C–V behavior (0.3–0.35 pF over 0–4 V VR) and I–V linearity (IF = 10–100 mA) critical for wideband detector linearity and LO leakage suppression.

Key Specifications

ParameterValue and Actual Design Meaning
Forward Voltage (VF)0.25 V at 10 mA - enables low-loss RF detection with minimal DC bias power
Junction Capacitance (C)0.3 pF at 1 MHz, VR = 0 V - supports impedance matching and bandwidth extension to 12 GHz
Series Inductance (LS)1.4 nH typical - limits parasitic resonance, preserves high-frequency S-parameter stability
Reverse Voltage (VR)4 V maximum - defines safe operating limit for RF envelope detection in pulsed radar front-ends
Forward Voltage Matching (ΔVF)≤20 mV at 10 mA - ensures amplitude balance in balanced mixer topologies
Differential Forward Resistance (RF)5.8 Ω at IF = 10/50 mA - determines conversion loss and dynamic range in active mixers

Pinout & Package

Package: SOT323-3 (2.0 mm × 2.1 mm × 0.9 mm), surface-mount, Pb-free/RoHS/halogen-free, marked "S8s".

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Anode of Diode 1Input node for RF signal injection in series-pair detector configuration
Pin 2Cathode of Diode 1 / Anode of Diode 2Internal interconnect node - not externally accessible; enables monolithic series pairing
Pin 3Cathode of Diode 2Output node for rectified or mixed signal; referenced to ground in common-cathode layout

Key Features

FeatureDesign Value
On-chip guard ringProvides intrinsic over-voltage protection without external components, improving system-level surge immunity
Matched VF tracking≤20 mV mismatch at 10 mA ensures amplitude symmetry in double-balanced mixer implementations
Low C–V hysteresisCapacitance varies only ±0.025 pF across 0–4 V reverse bias - maintains consistent impedance in AGC loops
ESD-rated structureHBM Class 2 (≥2 kV) per JEDEC JESD22-A114 - reduces handling-induced failure in automated assembly

Applications

Radar Front-End DetectorsTelematics RF Mixers

Use Scenario: Down-conversion of 24 GHz FMCW radar echoes in industrial proximity sensors.

IC Role / Device Role / Timing Role: Series-connected Schottky pair acts as zero-bias passive mixer core, converting RF to baseband IF without local oscillator injection.

Use Value: 0.25 V VF and 0.3 pF C enable >15 dB conversion gain margin at 12 GHz, minimizing external amplification.

Use Scenario: RF signal translation in vehicle-to-infrastructure (V2I) DSRC transceivers operating at 5.9 GHz.

IC Role / Device Role / Timing Role: Dual-diode pair functions as image-reject mixer stage, leveraging matched ΔVF for sideband suppression.

Use Value: 20 mV VF matching improves image rejection ratio by ≥3 dB versus unmatched discrete diodes.

Security Sensor InterfacesIndustrial Compensator Circuits

Use Scenario: Microwave motion detection in perimeter security systems using 10.525 GHz Doppler modules.

IC Role / Device Role / Timing Role: Detector diode pair rectifies Doppler-shifted carrier to generate baseband velocity signal.

Use Value: 1.4 nH LS minimizes self-resonance above 15 GHz, preserving signal fidelity in narrow-band Doppler filtering.

Use Scenario: Phase error correction in closed-loop RF power control for industrial plasma generators.

IC Role / Device Role / Timing Role: Paired diodes serve as precision RF sampling elements in feedback path of automatic level control (ALC).

Use Value: Stable 0.3 pF C across temperature (−55 °C to +150 °C) ensures repeatable detector sensitivity over full industrial range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky diode pair applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAT1504WH6327XTSA1Same die, identical electrical specs; differs only in reel quantity (3 k vs. 1 k) and date code formatNo functional difference; both qualified per JEDEC JESD22-A108 for industrial useSelect based on logistics preference - H6327 variant offers higher reel volume for production ramp
BAR63-04WHigher VF (0.35 V typ. @ 10 mA), higher C (0.45 pF), no guard ring; SOT323-3 packageLower frequency suitability (≤6 GHz); reduced ESD robustness and voltage transient toleranceUse only where cost sensitivity outweighs 12 GHz performance and over-voltage protection requirements

Compared with BAT1504WH2110XTSA1, the H6327 variant offers identical RF performance with bulk packaging advantages, while BAR63-04W trades off high-frequency capability and integrated protection for lower unit cost in sub-6 GHz applications.

Availability

BAT1504WH2110XTSA1 is available at Aetrix Electronics and suitable for radar front-ends, telematics transceivers, and industrial sensor interfaces requiring stable component supply across extended temperature ranges and high-frequency reliability.

Supply support for BAT1504WH2110XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.

The BAT15-04W series belongs to Infineon's RF Schottky diode product line, engineered specifically for high-linearity, low-parasitic mixing and detection in industrial and automotive radar systems up to 12 GHz.

FAQ

What is the maximum operating frequency for reliable mixer performance?

BAT1504WH2110XTSA1 supports stable mixer operation up to 12 GHz, validated by its 0.3 pF junction capacitance and 1.4 nH series inductance yielding favorable S-parameters in test fixtures. Performance beyond 12 GHz is limited by increasing series reactance and reduced isolation; actual usable bandwidth depends on PCB layout and matching network design.

Is this device suitable for zero-bias detector applications?

Yes - its low 0.25 V forward voltage at 10 mA and sub-6 Ω differential resistance enable effective zero- or low-bias RF detection. The matched diode pair architecture further supports balanced configurations that reject even-order harmonics and improve dynamic range in envelope detectors.

How does the on-chip guard ring affect ESD robustness?

The integrated guard ring increases junction breakdown margin and distributes electrostatic discharge current laterally, achieving HBM Class 2 (≥2 kV) per JEDEC JESD22-A114. This eliminates need for external TVS clamping in many RF front-end designs, reducing bill-of-materials and board space.

Can BAT1504WH2110XTSA1 replace BAT1504WH6327XTSA1 in existing designs?

Yes - both share identical die, electrical specifications, package, and marking. The only differences are reel size (1 k vs. 3 k) and date code formatting; no redesign, requalification, or layout change is required when substituting between these variants.

BAT1504WH2110XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
4V
Current - Max:
110 mA
Capacitance @ Vr, F:
0.35pF @ 0V, 1MHz
Resistance @ If, F:
5.8Ohm @ 50mA, 1MHz
Power Dissipation (Max):
100 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT323-3

BAT1504WH2110XTSA1 FAQ

1.How can I place an order for BAT1504WH2110XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT1504WH2110XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT1504WH2110XTSA1 reliable?

The price and inventory of BAT1504WH2110XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT1504WH2110XTSA1 is usually 5 days.

3.What payment methods are accepted for BAT1504WH2110XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT1504WH2110XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT1504WH2110XTSA1?

BAT1504WH2110XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT1504WH2110XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT1504WH2110XTSA1?

For technical support, including BAT1504WH2110XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT1504WH2110XTSA1 requirements.

6.How does Aetrix verify that BAT1504WH2110XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT1504WH2110XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT1504WH2110XTSA1 meets industry standards.

7.What is the process for return or replacement of BAT1504WH2110XTSA1?

All BAT1504WH2110XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT1504WH2110XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT1504WH2110XTSA1 part is unused and in its original packaging.

Return procedure for BAT1504WH2110XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT1504WH2110XTSA1 Tags

  • BAT1504WH2110XTSA1
  • BAT1504WH2110XTSA1 PDF
  • BAT1504WH2110XTSA1 Datasheet
  • BAT1504WH2110XTSA1 Specifications
  • BAT1504WH2110XTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BAT1504WH2110XTSA1
  • Buy BAT1504WH2110XTSA1
  • BAT1504WH2110XTSA1 Price
  • BAT1504WH2110XTSA1 Distributor
  • BAT1504WH2110XTSA1 Supplier
  • BAT1504WH2110XTSA1 Wholesale
Related Products
BAP70-02,115
BAP70-02,115

NXP USA Inc.

SMP1321-040LF
SMP1321-040LF

Skyworks Solutions Inc.

NSVR351SDSA3T1G
NSVR351SDSA3T1G

onsemi

BAT6302VH6327XTSA1
BAT6302VH6327XTSA1

Infineon Technologies

SMP1307-011LF
SMP1307-011LF

Skyworks Solutions Inc.

SMP1345-040LF
SMP1345-040LF

Skyworks Solutions Inc.

BAT1503WE6327HTSA1
BAT1503WE6327HTSA1

Infineon Technologies

SMS7630-005LF
SMS7630-005LF

Skyworks Solutions Inc.

SMP1322-040LF
SMP1322-040LF

Skyworks Solutions Inc.

SMS7621-040LF
SMS7621-040LF

Skyworks Solutions Inc.

SMS7621-079LF
SMS7621-079LF

Skyworks Solutions Inc.

SMS7630-040LF
SMS7630-040LF

Skyworks Solutions Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER