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Infineon Technologies BAT1504WH6327XTSA1
- Part No.:
- BAT1504WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT1504WH6327XTSA1.pdf
- Description:
- DIODE SCHOTTKY 4V 100MW SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:28,423
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Product details
Overview
BAT1504WH6327XTSA1 from Infineon is a silicon RF Schottky diode pair in SOT323-3 package, designed for high-frequency mixer and detector functions up to 12 GHz. It features low barrier height (VF = 0.25 V typ. at 10 mA), low junction capacitance (C = 0.3 pF at 1 MHz), and low series inductance (LS = 1.4 nH), enabling precise RF signal demodulation in radar and telematics systems.
For engineers reviewing the BAT1504WH6327XTSA1 datasheet, BAT1504WH6327XTSA1 pinout, BAT1504WH6327XTSA1 application, or BAT1504WH6327XTSA1 equivalent, this dual Schottky diode pair delivers verified RF performance with matched forward voltage (ΔVF ≤ 20 mV), industrial-grade reliability (−55 °C to +150 °C), and ESD-sensitive handling requirements.
Technical Context
This device integrates two N-type Schottky diodes in series configuration within a single SOT323-3 package, each featuring an on-chip guard ring for over-voltage protection. Its low VF (0.25 V typ. @ 10 mA) and low C (0.3 pF @ 1 MHz) support efficient nonlinear RF detection below 12 GHz.
The diode pair exhibits tight forward voltage matching (ΔVF ≤ 20 mV at 10 mA) and low differential resistance (RF = 5.8 Ω), ensuring consistent conversion gain and minimal distortion in balanced mixer topologies used in industrial radar front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 4 V max - defines maximum DC bias headroom before breakdown in detector bias networks |
| Forward Voltage (VF) | 0.25 V typ. @ 10 mA - enables low-loss rectification in weak-signal RF detectors |
| Junction Capacitance (C) | 0.3 pF @ 1 MHz, 0 V - minimizes shunt loading at microwave frequencies up to 12 GHz |
| Series Inductance (LS) | 1.4 nH typ. - limits parasitic reactance in 50 Ω RF paths, preserving impedance match |
| Forward Voltage Matching (ΔVF) | ≤20 mV @ 10 mA - ensures amplitude balance in differential mixer configurations |
| Thermal Resistance (RthJS) | 700 K/W - constrains junction temperature rise under 100 mW total dissipation at TS = 80 °C |
Pinout & Package
Package: SOT323-3 (2.0 mm × 2.1 mm × 0.9 mm), surface-mount, lead-free, RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | RF input node for first diode in series pair; connects to local oscillator or RF signal path |
| Pin 2 | Cathode of Diode 1 / Anode of Diode 2 | Internal common node; forms series connection point between diodes for balanced operation |
| Pin 3 | Cathode of Diode 2 | Output node for detector/mixer IF stage; referenced to ground via external RC load |
Key Features
| Feature | Design Value |
|---|---|
| On-chip guard ring | Provides integrated over-voltage protection without external components, improving system robustness in transient-prone radar interfaces |
| Low forward voltage matching | ΔVF ≤ 20 mV ensures <0.2 dB amplitude imbalance in dual-diode mixers, critical for image rejection |
| Industry-standard SOT323-3 footprint | Enables drop-in replacement in existing RF layouts and compatibility with standard pick-and-place equipment |
| Qualified per JEDEC JESD22-A108 | Validated for industrial temperature range (−55 °C to +150 °C), supporting deployment in harsh-environment sensor systems |
Applications
| Radar Front-End Detectors | Telematics RF Mixers |
|---|---|
Use Scenario: Down-conversion of 24 GHz FMCW radar echoes in industrial level sensing systems. IC Role / Device Role / Timing Role: Dual Schottky diode pair performing synchronous envelope detection with matched nonlinearity. Use Value: Low C (0.3 pF) and matched VF enable >40 dB image rejection and stable IF output across −40 °C to +85 °C ambient. | Use Scenario: Local oscillator injection and RF signal mixing in vehicle-to-infrastructure (V2I) communication modules. IC Role / Device Role / Timing Role: Series-connected RF detector pair extracting baseband telemetry data from modulated carrier. Use Value: 12 GHz bandwidth and 1.4 nH LS preserve phase coherence required for QPSK demodulation fidelity. |
| Security Sensor Interfaces | Industrial Compensator Circuits |
Use Scenario: Motion-triggered millimeter-wave presence detection in perimeter security gateways. IC Role / Device Role / Timing Role: High-sensitivity RF envelope detector converting reflected signal amplitude into digital trigger logic. Use Value: 0.25 V VF enables reliable detection of sub-mV RF signals under battery-limited power budgets. | Use Scenario: Phase-error compensation in closed-loop industrial RF heating controllers. IC Role / Device Role / Timing Role: Balanced diode pair generating error voltage proportional to RF phase mismatch. Use Value: ΔVF ≤ 20 mV ensures <±0.5° phase measurement uncertainty at 5.8 GHz operating frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF Schottky diode pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR63-03W | Higher VF (0.35 V typ. @ 10 mA); same SOT323-3 package; no guard ring | Limited to lower-frequency (<6 GHz) detector use due to higher C (0.4 pF) | Prefer when cost sensitivity outweighs 12 GHz performance and over-voltage robustness |
| HSMS-2852 | Lower C (0.22 pF); higher VR (7 V); larger SOT-23 package; no integrated guard ring | Requires PCB layout redesign; better suited for wide-dynamic-range receiver front-ends | Choose when higher reverse voltage rating and ultra-low capacitance justify footprint change |
Compared with BAR63-03W and HSMS-2852, BAT1504WH6327XTSA1 uniquely combines 12 GHz capability, on-chip guard ring protection, and tight VF matching-making it optimal for compact, industrial-grade radar and telematics detectors where layout space and transient immunity are constrained.
Availability
BAT1504WH6327XTSA1 is available at Aetrix Electronics and suitable for radar front-ends, telematics transceivers, and industrial compensator circuits requiring stable component supply and guaranteed long-term sourcing.
Supply support for BAT1504WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.
The BAT15-04W series belongs to Infineon's RF Schottky diode product line, engineered specifically for high-frequency mixer and detector functions in industrial radar, security, and telematics systems demanding reliability beyond commercial temperature ranges.
FAQ
Is BAT1504WH6327XTSA1 suitable for 5G NR sub-6 GHz front-end designs?
Yes - its 12 GHz bandwidth, 0.3 pF capacitance, and 0.25 V forward voltage support RF detection and mixing in sub-6 GHz 5G infrastructure equipment. Verified performance up to 6 GHz includes stable conversion loss and low intermodulation distortion under 10 mA bias.
What is the recommended PCB pad layout for SOT323-3 mounting?
Use the footprint specified in Infineon's Package Information document (Figure 8): 0.65 mm pitch, 1.1 mm × 0.9 mm solder pads with 0.2 mm solder mask opening. Thermal relief vias under Pin 2 (common node) improve heat dissipation during continuous DC bias.
Does BAT1504WH6327XTSA1 require external ESD protection?
No - the integrated guard ring provides inherent over-voltage protection up to 4 V reverse bias. However, handling must follow ESD Class 1C protocols (≤500 V HBM), and board-level TVS clamping is still advised for system-level surge immunity in industrial environments.
How does forward voltage matching impact mixer LO leakage suppression?
Tight ΔVF ≤ 20 mV ensures symmetrical conduction in balanced mixer topologies, reducing even-order harmonics and improving LO-to-RF isolation by ≥12 dB compared to unmatched diode pairs - directly measurable in 24 GHz radar evaluation boards.
BAT1504WH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max):
- 4V
- Current - Max:
- 110 mA
- Capacitance @ Vr, F:
- 0.35pF @ 0V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 100 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT323
BAT1504WH6327XTSA1 FAQ
1.How can I place an order for BAT1504WH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT1504WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT1504WH6327XTSA1 reliable?
The price and inventory of BAT1504WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT1504WH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAT1504WH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT1504WH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT1504WH6327XTSA1?
BAT1504WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT1504WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT1504WH6327XTSA1?
For technical support, including BAT1504WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT1504WH6327XTSA1 requirements.
6.How does Aetrix verify that BAT1504WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAT1504WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT1504WH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAT1504WH6327XTSA1?
All BAT1504WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT1504WH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT1504WH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAT1504WH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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