Infineon Technologies BAT15-05WH6327XTSA1

Overview

BAT15-05WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode optimized for DBS mixer applications up to 12 GHz, phase detection, and RF modulation. It features a low barrier structure, 4 V reverse voltage rating, 110 mA forward current capability, 100 mW total power dissipation, and 0.32 V typical forward voltage at 10 mA.

For engineers reviewing the BAT15-05WH6327XTSA1 datasheet, BAT15-05WH6327XTSA1 pinout, BAT15-05WH6327XTSA1 application, or BAT15-05WH6327XTSA1 equivalent, key selection criteria include RF capacitance (0.35–0.5 pF), differential forward resistance (5.5 Ω typ.), thermal resistance (850 K/W), and SOT323 package compatibility in high-frequency signal path design.

Technical Context

This diode operates as a low-noise, high-speed switching element in microwave front-end circuits. Its low barrier Schottky architecture enables sub-0.35 V forward conduction and minimal junction capacitance below 0.5 pF at 0 V bias - critical for minimizing insertion loss and phase distortion in 10–12 GHz mixers.

The SOT323 package provides controlled parasitic inductance (1.4 nH) and thermal resistance of 850 K/W, supporting stable operation up to 150 °C junction temperature while maintaining matched VF performance across production lots.

Key Specifications

Pinout & Package

Supplied in SOT323 (SC-70) surface-mount package: 2-terminal single-diode configuration with cathode marked by band; leadless, RoHS-compliant, ESD-sensitive device requiring handling per IEC 61340-5-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode detector/mixer applications.

Compared with HSMS-2850 and BAT62-03W, BAT15-05WH6327XTSA1 delivers superior high-frequency linearity and lower conversion loss above 10 GHz due to its 0.35–0.5 pF capacitance and 0.32 V VF - making it the preferred choice for satellite and millimeter-wave instrumentation.

Availability

BAT15-05WH6327XTSA1 is available at Aetrix Electronics and suitable for satellite LNB modules, microwave test equipment, 5G wireless backhaul transceivers, and industrial RF sensor systems requiring stable component supply across extended temperature ranges.

Supply support for BAT15-05WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's BAT15 series of microwave Schottky diodes - engineered specifically for low-noise, high-frequency mixing, detection, and modulation in satellite, radar, and test instrumentation applications.

FAQ

Is BAT15-05WH6327XTSA1 suitable for 12 GHz operation?

Yes. Its 0.35–0.5 pF capacitance at 0 V bias and 5.5 Ω differential resistance support stable operation up to 12 GHz in mixer and detector configurations, as confirmed in Infineon's application note AN2011-06-15 and measured S-parameter data.

What is the marking code for BAT15-05WH6327XTSA1?

The top-side marking is "S5s", consistent with Infineon's SOT323-packaged BAT15 variants. This code appears adjacent to the cathode band and is laser-etched on the package body per standard JEDEC labeling.

Does this diode require special ESD handling?

Yes. As an ESD-sensitive device (Class 1B per JESD22-A114), it requires grounded workstations, ionized air, and static-dissipative packaging during assembly. The datasheet explicitly warns against handling without wrist straps or conductive foam.

Can BAT15-05WH6327XTSA1 replace BAT15-04W in existing designs?

Yes, with verification. Both use SOT323 packages and share identical electrical specs (VF, CT, VR, IF), but BAT15-05W has higher thermal resistance (850 vs. 820 K/W). Layout thermal relief should be reviewed if operating near 100 mW dissipation limits.