Infineon Technologies BAT1505WH6327XTSA1

Overview

BAT1505WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode optimized for DBS mixer applications up to 12 GHz, phase detectors, and modulators; features low noise figure (typ. <1 dB), low forward voltage (VF = 0.23 V @ IF = 10 mA), and low diode capacitance (CT = 0.35 pF @ VR = 0 V, f = 1 MHz); used in satellite TV front-end downconverters.

For engineers reviewing the BAT1505WH6327XTSA1 datasheet, BAT1505WH6327XTSA1 pinout, BAT1505WH6327XTSA1 application, or BAT1505WH6327XTSA1 equivalent, key selection criteria include RF performance at Ku-band, thermal resistance (RthJS ≤ 850 K/W), VF matching tolerance (ΔVF ≤ 20 mV), and SOT323 package compatibility with high-frequency PCB layouts.

Technical Context

This Schottky diode employs a low-barrier metal–semiconductor junction enabling sub-0.3 V forward conduction and minimal charge storage-critical for broadband RF mixing and phase detection. Its 0.35 pF zero-bias capacitance and 5.5 Ω differential forward resistance (RF) support stable impedance matching across 1–12 GHz.

The device operates within -55 °C to +150 °C ambient range and delivers 110 mA continuous forward current with 100 mW total power dissipation. Thermal design relies on its SOT323 package's RthJS ≤ 850 K/W and junction temperature limit of 150 °C.

Key Specifications

Pinout & Package

Package: SOT323 (3-pin, leadless, single diode configuration). Dimensions: 1.7 mm × 1.25 mm × 0.95 mm; standard JEDEC MO-203-AB footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAT1505WH6327XTSA1, HSMS-2850 offers broader availability but sacrifices Ku-band efficiency, while BAT62-03W trades 2 GHz bandwidth for improved thermal robustness-making BAT1505WH6327XTSA1 optimal for satellite LNBs demanding full 12 GHz coverage and minimal NF.

Availability

BAT1505WH6327XTSA1 is available at Aetrix Electronics and suitable for satellite communications receivers, RF test instrumentation, and Ku-band phased-array sensor systems requiring stable component supply and consistent RF performance across production lots.

Supply support for BAT1505WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with over 30 years of Schottky diode innovation for high-frequency applications.

BAT15 series belongs to Infineon's high-frequency discrete portfolio, designed specifically for microwave mixing, detection, and modulation in satellite, radar, and test equipment-emphasizing low noise, tight parameter matching, and Ku-band reliability.

FAQ

What is the maximum recommended RF input power for BAT1505WH6327XTSA1 in mixer applications?

The device supports peak RF input power up to +13 dBm (20 mW) under pulsed conditions (tp ≤ 10 µs, duty cycle ≤ 0.1%), based on its 100 mW Ptot rating and RthJS ≤ 850 K/W. Continuous-wave operation should remain below +7 dBm to maintain junction temperature ≤ 125 °C at 70 °C ambient.

Is BAT1505WH6327XTSA1 suitable for zero-bias detector circuits?

Yes-its low barrier Schottky structure yields sub-0.2 V turn-on voltage and 5.5 Ω RF, enabling efficient zero-bias detection at 10–12 GHz. Measured output voltage linearity exceeds ±1.5% across -20 to -5 dBm input range in 50 Ω systems, per Infineon Application Note AN321.

How does the SOT323 package affect RF layout for this diode?

The SOT323's 1.7 × 1.25 mm footprint minimizes parasitic inductance (<0.3 nH per bond wire) and enables symmetric microstrip placement in balanced mixer topologies. Ground pad (Pin 3) must be soldered to a solid thermal plane with ≥4 vias to achieve specified RthJS ≤ 850 K/W and prevent resonance above 15 GHz.

Does BAT1505WH6327XTSA1 require external biasing in phase detector configurations?

No-its low forward voltage (0.16 V typ. @ 1 mA) and low CT allow true zero-bias operation in phase detectors. When used in quadrature detector ICs, it delivers linear phase-to-DC voltage response from 0° to 180° without DC bias network, reducing component count and board area in compact RF modules.