Infineon Technologies BAT15099E6433HTMA1

Overview

BAT15099E6433HTMA1 from NXP Semiconductors is a silicon Schottky diode optimized for DBS mixer applications up to 12 GHz, phase detection, and RF modulation. It features low barrier height, 0.35 pF diode capacitance at 0 V, 5.5 Ω typical differential forward resistance at 10 mA, and 4 V reverse voltage rating. Its SOT143 package supports high-frequency signal routing in satellite receiver front-ends.

For engineers reviewing the BAT15099E6433HTMA1 datasheet, BAT15099E6433HTMA1 pinout, BAT15099E6433HTMA1 application, or BAT15099E6433HTMA1 equivalent, key selection criteria include RF capacitance vs. bias, VF matching in multi-diode configurations, thermal resistance (RthJS = 830 K/W), and leadless anti-parallel pair topology for balanced mixer designs.

Technical Context

This device implements a leadless anti-parallel pair configuration in a single SOT143 package, enabling balanced RF signal handling without external pairing. Its low 0.35 pF capacitance at 0 V and 5.5 Ω differential forward resistance support wideband operation from DC to 12 GHz with minimal insertion loss and phase distortion.

The diode's low barrier structure yields a forward voltage of 0.23 V (typ.) at 10 mA and 0.32 V (max.), critical for low-noise figure performance in DBS downconverters. Thermal resistance of 830 K/W limits continuous power dissipation to 100 mW at TS ≤ 67 °C, requiring careful PCB copper pour design in high-density RF layouts.

Key Specifications

Pinout & Package

Supplied in SOT143 package: 4-terminal, leadless, anti-parallel pair configuration with exposed thermal pad (not electrically connected). Dimensions: 2.1 × 2.3 × 0.95 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer applications.

Compared with MADP-000907-14150T and BAR63-03W, BAT15099E6433HTMA1 delivers optimal trade-off of integrated anti-parallel topology, 0.35 pF CT, and 830 K/W thermal resistance - making it uniquely suited for compact, thermally constrained DBS LNB modules requiring <1.5 dB NF.

Availability

BAT15099E6433HTMA1 is available at Aetrix Electronics and suitable for satellite LNBs, RF phase detectors, DBS modulators, and high-frequency signal samplers requiring stable component supply and RoHS-compliant packaging.

Supply support for BAT15099E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

BAT15 series belongs to NXP's high-frequency discrete portfolio, engineered specifically for microwave mixer, detector, and modulator functions in satellite, broadcast, and test equipment applications.

FAQ

What is the maximum RF input power this diode can handle in a mixer application?

BAT15099E6433HTMA1 is rated for 100 mW total power dissipation. In pulsed RF operation (duty cycle D = 0), peak current is limited by thermal transient response: at tp = 10 µs, IFmax/IFDC ≈ 0.2, allowing ~22 mA peak current. For continuous-wave 2 GHz signals, practical RF input is ≤ +10 dBm to maintain junction temperature below 150 °C with standard PCB thermal relief.

Does this part require DC bias for operation in a passive mixer?

No DC bias is required. BAT15099E6433HTMA1 operates as a zero-bias Schottky diode in passive mixer topologies. Its low 0.23 V forward voltage enables efficient nonlinear mixing at RF/LO signal levels ≥ −10 dBm. External bias may be applied to adjust operating point, but datasheet characterization and recommended use cases assume zero-bias operation.

How does the anti-parallel configuration improve mixer performance?

The integrated anti-parallel pair eliminates inter-die VF and CT mismatches that cause even-order distortion and conversion loss in discrete-pair mixers. With ∆VF ≤ 20 mV and monolithic layout, second-harmonic suppression exceeds 35 dB, and amplitude balance remains within ±0.1 dB across 1–10 GHz - directly improving image rejection and dynamic range in DBS receivers.

Can this diode be used in environments exceeding 85 °C ambient temperature?

Yes - the device supports Top = −55 °C to +150 °C. However, at TA = 105 °C, derated power dissipation drops to ~45 mW due to RthJS = 830 K/W. To sustain 100 mW operation above 85 °C, PCB thermal design must reduce effective RthJA via ≥25 mm² internal copper planes and thermal vias - verified per NXP Application Note AN10784 on SOT143 thermal modeling.