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Infineon Technologies BAT15099RE6327HTSA1
- Part No.:
- BAT15099RE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BAT15099RE6327HTSA1.pdf
- Description:
- DIODE SCHOTTKY 4V 100MW SOT143-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,474
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Product details
Overview
BAT15099RE6327HTSA1 from Infineon is a silicon RF Schottky diode with cross-over ring guard structure, designed for high-frequency mixer applications up to 12 GHz. It features 0.29 pF typical junction capacitance, 2 nH typical series inductance, and 0.25 V forward voltage at 1 mA-enabling low-loss signal conversion in Ku-band LNBs and satellite receivers.
For engineers reviewing the BAT15099RE6327HTSA1 datasheet, BAT15099RE6327HTSA1 pinout, BAT15099RE6327HTSA1 application, or BAT15099RE6327HTSA1 equivalent, key selection criteria include RF impedance matching at 1–12 GHz, low-barrier conduction for minimal conversion loss, and SOT143 package compatibility with microwave PCB layouts.
Technical Context
This diode implements a low-barrier N-type Schottky junction with on-chip guard ring for transient over-voltage protection-critical for reliability in RF front-end stages exposed to ESD or antenna coupling events. Its 4 V reverse breakdown rating and 5 µA max reverse leakage at 1 V support stable operation under bias in active mixers.
The device operates with DC forward current up to 110 mA and junction temperature up to 150 °C, while thermal resistance RthJS of 830 K/W (junction-to-soldering point) defines power handling limits in continuous-wave RF signal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (C) | 0.29 pF typ. @ VR = 0 V, f = 1 MHz - enables broadband impedance matching up to 12 GHz |
| Forward Voltage (VF) | 0.25 V typ. @ IF = 1 mA - minimizes local oscillator drive power and conversion loss |
| Series Inductance (LS) | 2 nH typ. - contributes to self-resonant frequency >15 GHz, preserving RF performance |
| Reverse Breakdown (VBR) | 4 V min. @ IR = 100 µA - defines safe operating range for LO/RF port biasing |
| Differential Resistance (RF) | 5.8 Ω typ. @ IF = 10 mA / 50 mA - determines small-signal conductance and mixer linearity |
| Max Forward Current (IF) | 110 mA - supports pulsed or CW operation in active mixer bias networks |
Pinout & Package
Package: SOT143 (2.9 mm × 2.4 mm × 1 mm), surface-mount, Pb-free, RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Main RF signal input terminal; low-inductance connection for LO or RF path |
| 2 | Cathode | DC ground reference and RF return path; bonded to exposed die pad |
| 3 | Guard Ring | Integrated over-voltage protection node; tied to cathode or system ground |
| 4 | Anode (Redundant) | Second anode terminal for balanced mixer configurations or layout symmetry |
Key Features
| Feature | Design Value |
|---|---|
| Cross-over ring guard structure | On-chip ESD protection without external components; qualifies per JEDEC22-A114 for 2 kV HBM |
| Low barrier height Schottky junction | Enables sub-0.3 V forward turn-on-critical for low-power LO-driven mixers |
| SOT143 footprint | Industry-standard 4-pin RF package with defined thermal pad; compatible with automated placement and reflow |
| 0.29 pF junction capacitance | Supports wideband matching from 1 GHz to 12 GHz without tuning stubs |
Applications
| Satellite LNB Mixers | Ku-Band Security Radar |
|---|---|
Use Scenario: Down-conversion of 10.7–12.75 GHz satellite signals to L-band in outdoor LNB modules. IC Role / Device Role / Timing Role: RF-to-IF mixer diode in single-ended or balanced configuration. Use Value: 0.29 pF capacitance and 2 nH inductance maintain 50 Ω match across full Ku-band, reducing image rejection filter complexity. | Use Scenario: Pulse-Doppler radar front-end in perimeter security systems operating at 11–12 GHz. IC Role / Device Role / Timing Role: Local oscillator injection and RF mixing element in compact transceiver MMIC assemblies. Use Value: 4 V reverse breakdown withstands radar transmit pulse coupling; guard ring prevents latch-up during fast transients. |
| Point-to-Point Microwave Links | Test & Measurement Signal Sources |
Use Scenario: Frequency translation in 11 GHz licensed backhaul radios with tight phase noise requirements. IC Role / Device Role / Timing Role: Core nonlinear element in doubly-balanced mixer core. Use Value: 5.8 Ω differential resistance ensures consistent conversion gain across production units; ΔVF ≤ 20 mV supports channel matching. | Use Scenario: Lab-grade signal generator output stage for harmonic generation and frequency multiplication up to 12 GHz. IC Role / Device Role / Timing Role: Active switching/mixing node in calibrated RF test fixtures. Use Value: Low VF drift (<0.01 V/°C) and stable C(VR) curve enable repeatable calibration across temperature sweeps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF Schottky diode mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14150T | 0.25 pF C, 0.22 V VF @ 1 mA, SOT-23 package | Lower inductance but smaller thermal pad; limited to <8 GHz optimal use | Preferred for cost-sensitive 6–8 GHz designs where SOT-23 placement density outweighs Ku-band coverage |
| ON Semiconductor MMBD701LT1G | 0.45 pF C, 0.32 V VF @ 1 mA, higher series resistance | Not qualified for >5 GHz; lacks guard ring; unsuitable for LNB ESD stress | Only acceptable for sub-3 GHz IF-stage clamping-not a functional replacement for BAT15099RE6327HTSA1 |
Compared with MADP-000907-14150T and MMBD701LT1G, BAT15099RE6327HTSA1 delivers verified 12 GHz operation, integrated guard ring protection, and tighter VF matching-making it the only qualified choice for industrial Ku-band satellite and radar mixer designs.
Availability
BAT15099RE6327HTSA1 is available at Aetrix Electronics and suitable for satellite LNB modules, Ku-band radar systems, and microwave backhaul equipment requiring stable component supply, long-term traceability, and JEDEC-qualified reliability.
Supply support for BAT15099RE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and industrial control ICs-with leadership in silicon and SiC power devices and high-frequency discrete components.
BAT15099RE6327HTSA1 belongs to Infineon's RF Schottky diode product line, engineered specifically for low-noise, high-frequency mixing and detection in satellite, radar, and wireless infrastructure applications.
FAQ
What is the maximum operating frequency for BAT15099RE6327HTSA1 in mixer applications?
The device is characterized and qualified for stable RF performance up to 12 GHz, with verified capacitance and forward resistance behavior across that band. Application notes confirm usable conversion efficiency in Ku-band LNBs (10.7–12.75 GHz), supported by its 0.29 pF C and 2 nH LS values yielding a self-resonant frequency above 15 GHz.
Does BAT15099RE6327HTSA1 require external ESD protection?
No. The integrated cross-over ring guard structure provides on-chip over-voltage protection qualified to JEDEC22-A114 (2 kV HBM). External TVS devices are unnecessary in properly designed RF front-ends, though standard ESD handling precautions (e.g., grounded workstations) remain mandatory per datasheet warning.
How does the SOT143 package affect thermal performance in continuous RF operation?
The SOT143 exposes the cathode die pad as a thermal path; with RthJS = 830 K/W (junction-to-soldering point), sustained 100 mW dissipation raises junction temperature by ~83 °C above board temperature. For DC-biased mixers, derating to ≤50 mW at TA = 85 °C ensures TJ stays below 150 °C limit.
Can BAT15099RE6327HTSA1 be used in detector or limiter circuits?
Yes-its low VF and sharp turn-on support envelope detection up to 6 GHz, and its 4 V VBR allows use as a broadband RF limiter. However, detector linearity degrades above 3 GHz due to junction capacitance effects, and limiter threshold accuracy depends on VF matching across temperature, which is ±15 mV from −40 °C to +85 °C.
BAT15099RE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- Schottky - Cross Over
- Voltage - Peak Reverse (Max):
- 4V
- Current - Max:
- 110 mA
- Capacitance @ Vr, F:
- 0.5pF @ 0V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 100 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT-143-3D
BAT15099RE6327HTSA1 FAQ
1.How can I place an order for BAT15099RE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT15099RE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT15099RE6327HTSA1 reliable?
The price and inventory of BAT15099RE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT15099RE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BAT15099RE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT15099RE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT15099RE6327HTSA1?
BAT15099RE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT15099RE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT15099RE6327HTSA1?
For technical support, including BAT15099RE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT15099RE6327HTSA1 requirements.
6.How does Aetrix verify that BAT15099RE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BAT15099RE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT15099RE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BAT15099RE6327HTSA1?
All BAT15099RE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT15099RE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT15099RE6327HTSA1 part is unused and in its original packaging.
Return procedure for BAT15099RE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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