Infineon Technologies BAT1704E6583HTSA1

Overview

BAT1704E6583HTSA1 from Nexperia is a silicon Schottky diode configured as a common cathode dual diode in SOT143 package, rated for 4 V reverse voltage, 130 mA forward current, and 150 mW power dissipation at TS ≤ 60 °C, optimized for VHF/UHF mixer and high-speed switching applications.

For engineers reviewing the BAT1704E6583HTSA1 datasheet, BAT1704E6583HTSA1 pinout, BAT1704E6583HTSA1 application, or BAT1704E6583HTSA1 equivalent, key selection criteria include diode capacitance (0.4–0.75 pF at 1 MHz), forward voltage matching (≤20 mV at IF = 1 mA), differential forward resistance (8–15 Ω), low IR (≤0.25 µA at VR = 3 V), and thermal resistance (RthJS ≤ 590 K/W).

Technical Context

This dual-common-cathode Schottky diode enables balanced RF signal mixing by providing matched VF characteristics and low junction capacitance across both diodes - critical for minimizing phase imbalance in VHF/UHF frequency doublers and detector stages. Its 2 nH series inductance and sub-15 Ω RF resistance support operation up to 1 GHz with minimal insertion loss.

The device operates within -55 °C to +125 °C ambient, with junction temperature limited to 150 °C. Thermal design must account for RthJS ≤ 590 K/W and derated IF vs. heatsink temperature (e.g., IF = 100 mA at TS = 120 °C), per published IF(TS) curves for BAT17-04/BAT17-07 variants.

Key Specifications

Pinout & Package

SOT143 (4-pin plastic surface-mount package) with gull-wing leads; pin 1 and pin 2 are anodes, pin 3 is common cathode, pin 4 is unused (thermal pad not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-common-cathode Schottky diode applications.

Compared with BAT1704E6583HTSA1, SKY13370-374LF trades VHF optimization for GHz-band integration, while BAT54C lacks the low-CT and tight VF matching needed for RF mixing - making BAT1704E6583HTSA1 uniquely suited for sub-1 GHz balanced detector designs.

Availability

BAT1704E6583HTSA1 is available at Aetrix Electronics and suitable for VHF/UHF mixer modules, high-speed RF switches, FM radio detectors, and low-power signal clamping circuits requiring stable component supply and RoHS-compliant sourcing.

Supply support for BAT1704E6583HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified Schottky diodes and ESD protection solutions.

The BAT17 series targets RF signal conditioning in consumer and industrial wireless systems, emphasizing low parasitic performance, thermal robustness, and consistent matching for analog front-end applications.

FAQ

What is the maximum operating frequency for BAT1704E6583HTSA1 in mixer applications?

The device supports reliable operation up to 500 MHz in passive mixer topologies, validated by its 0.4–0.75 pF capacitance and 8–15 Ω RF resistance at 10 kHz–1 MHz test conditions. Performance beyond 500 MHz depends on PCB layout parasitics and external matching, but measured conversion loss remains <7 dB through 800 MHz in reference designs.

Is BAT1704E6583HTSA1 pin-compatible with BAT17-04 or BAT17-07?

Yes - BAT1704E6583HTSA1 uses the SOT143 package identical to BAT17-04 and BAT17-07, sharing the same pin 1–2–3 anode-anode-cathode assignment. However, BAT17-04 is SOT23 (3-pin) and BAT17-07 is also SOT143 but configured as parallel pair, so only BAT17-07 shares both footprint and function.

How does the 2 nH series inductance affect RF performance?

The 2 nH LS value - inherent to bond wire and lead frame - introduces a reactance of ~12.6 Ω at 1 GHz, which must be absorbed in matching networks. In VHF/UHF designs (<300 MHz), this inductance is negligible (<4 Ω), preserving low insertion loss and enabling direct integration into microstrip-based baluns.

Can BAT1704E6583HTSA1 be used in DC-coupled applications?

No - the 4 V VR rating and 0.25 µA IR at 3 V make it unsuitable for sustained DC reverse bias above 3 V. It is designed for AC-coupled RF signal paths where peak inverse voltage remains below 3.5 V; DC blocking capacitors are required in mixer LO injection paths to prevent junction degradation.