Infineon Technologies BAT1705WH6327XTSA1

Overview

BAT1705WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode configured as a common cathode dual diode in SOT-323 package, rated for 4 V reverse voltage, 130 mA forward current, and 150 mW power dissipation at TS ≤ 46 °C, optimized for VHF/UHF mixer and high-speed switching applications.

For engineers reviewing the BAT1705WH6327XTSA1 datasheet, BAT1705WH6327XTSA1 pinout, BAT1705WH6327XTSA1 application, or BAT1705WH6327XTSA1 equivalent, key selection criteria include diode capacitance (0.4–0.75 pF at VR = 0 V), forward voltage matching (≤20 mV at IF = 1 mA), differential forward resistance (8–15 Ω at IF = 5 mA), low IR (≤0.25 µA at VR = 3 V), and thermal resistance (RthJS ≤ 690 K/W).

Technical Context

This dual common-cathode Schottky diode supports RF signal mixing and fast switching via matched VF characteristics and sub-pF junction capacitance. Its low series inductance (LS = 1.4 nH) and tight VF matching enable balanced operation in push-pull or differential mixer topologies.

The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C. Thermal design must account for its RthJS of ≤690 K/W and derated IF versus heatsink temperature (TS), dropping to ~60 mA at TS = 46 °C per datasheet curve.

Key Specifications

Pinout & Package

SOT-323 (SC-70) surface-mount package: 3-pin, common cathode configuration (Pin 1 = Anode A, Pin 2 = Cathode, Pin 3 = Anode B); footprint compatible with JEDEC MO-203AA, 2.1 mm × 1.25 mm body size, 0.65 mm pin pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer applications.

Compared with BAT1705WH6327XTSA1, BAT1704WH6327XTSA1 lacks dual-leg matching for balanced operation, while BAR63-03W trades lower capacitance for higher forward drop and reduced VHF conversion efficiency-making BAT1705W optimal for precision low-loss mixer designs.

Availability

BAT1705WH6327XTSA1 is available at Aetrix Electronics and suitable for VHF/UHF mixer modules, portable radio front-ends, and high-speed RF switch designs requiring stable component supply, consistent VF matching, and RoHS-compliant packaging.

Supply support for BAT1705WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaAs diode technologies for wireless infrastructure.

The BAT17 family targets RF signal conditioning in consumer and industrial wireless systems, emphasizing low-capacitance, matched dual-diode topologies for mixer and switching functions in compact SMT packages.

FAQ

What is the maximum recommended heatsink temperature (TS) for continuous operation?

The BAT1705WH6327XTSA1 must be operated with heatsink temperature (TS) ≤ 46 °C to maintain full 130 mA forward current rating. At TS = 46 °C, the derated IF drops to approximately 60 mA per the datasheet thermal curve; exceeding this limit risks junction overheating beyond 150 °C.

Is this device suitable for use in 2.4 GHz WiFi front-end switching?

No-while its 0.4–0.75 pF capacitance supports UHF operation, the 4 V VR rating and 130 mA IF limit make it unsuitable for 2.4 GHz PA output switching. It is validated for VHF/UHF mixers up to 900 MHz; for 2.4 GHz, consider BAR63-03W or SMP1320 series with higher VR and optimized CT vs. VR curves.

How does the common cathode configuration impact PCB layout in a double-balanced mixer?

The common cathode (Pin 2) must be routed as a low-inductance, symmetric node to both RF and LO ground references. Use a compact star connection or dedicated ground pour beneath the SOT-323 to minimize parasitic inductance; unequal cathode path lengths introduce amplitude/phase imbalance and degrade image rejection by >10 dB.

Does the "W" suffix indicate wafer-level packaging or a different process?

No-the "W" in BAT1705WH6327XTSA1 denotes Infineon's standard RoHS-compliant, halogen-free, Pb-free plating on the SOT-323 leadframe (per specification W6327). It does not indicate wafer-level chip-scale packaging; the device remains a conventional die-attach-in-SOT construction with standard wirebond interconnect.