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Infineon Technologies BAT17-06WE6327
- Part No.:
- BAT17-06WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT17-06WE6327.pdf
- Description:
- RF MIXER/DETECTOR SCHOTTKY DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
BAT17-06WE6327 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common anode dual diode, with 4 V reverse voltage rating, 130 mA forward current, 0.55 pF typical capacitance at 1 MHz/0 V, and 340 mV forward voltage at 1 mA - optimized for VHF/UHF mixer and high-speed switching applications.
For engineers reviewing the BAT17-06WE6327 datasheet, BAT17-06WE6327 pinout, BAT17-06WE6327 application, or BAT17-06WE6327 equivalent, key selection criteria include RF diode capacitance matching, low forward voltage consistency across dual elements, thermal resistance under RF bias, and SOT323 footprint compatibility in compact RF front-end layouts.
Technical Context
This dual-diode device integrates two Schottky junctions sharing a common anode terminal, enabling balanced signal routing in mixer topologies and differential switching. Its 0.55 pF typ. junction capacitance and 8–15 Ω differential forward resistance support stable impedance matching up to 1 GHz.
The common-anode configuration allows simultaneous conduction control of both diodes with a single anode drive, while VF matching ≤20 mV (at 1 mA) ensures amplitude symmetry critical for LO injection and RF signal rectification in receiver front ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 4 V - sets maximum RF signal swing before breakdown in mixer or detector circuits |
| Forward Current (IF) | 130 mA - defines peak pulsed current handling in switching mode without thermal runaway |
| Junction Capacitance (CT) | 0.55 pF typ. @ 1 MHz, 0 V - determines tuning range and insertion loss in VHF/UHF bandpass filters |
| Forward Voltage (VF) | 340 mV @ 1 mA - enables low-loss signal mixing with minimal DC offset generation |
| VF Matching (∆VF) | ≤20 mV @ 1 mA - ensures amplitude balance between dual paths in balanced mixer architectures |
| Thermal Resistance (RthJS) | ≤690 K/W - limits junction temperature rise during sustained RF operation in SOT323 package |
| Operating Temp Range | −55 °C to +125 °C - supports deployment in automotive and industrial RF modules |
Pinout & Package
SOT323 plastic surface-mount package (2.1 mm × 1.25 mm × 0.9 mm), lead-free and RoHS compliant, with gull-wing leads and exposed die pad not electrically connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (common) | Shared anode connection for both diodes; primary RF input node in mixer configurations |
| 2 | Cathode 1 | First diode cathode; used for I-channel or reference path in double-balanced mixers |
| 3 | Cathode 2 | Second diode cathode; used for Q-channel or complementary path in image-reject architectures |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual Schottky structure | Enables symmetrical RF signal routing without external wiring, reducing parasitic inductance in 50 Ω systems |
| Low junction capacitance (0.4–0.75 pF) | Minimizes capacitive loading on VHF/UHF tank circuits, preserving Q-factor above 300 MHz |
| Sub-350 mV VF at 1 mA | Reduces local oscillator feedthrough and improves conversion loss in passive mixers |
| ≤20 mV VF matching | Supports >25 dB image rejection in double-balanced mixer implementations |
| ESD-sensitive handling (HBM Class 2) | Requires grounded wrist strap and ionized air during PCB assembly to prevent junction damage |
Applications
| RF Mixer Circuits | VHF/UHF Signal Detectors |
|---|---|
Use Scenario: Double-balanced mixer in 433 MHz ISM-band transceiver front end. IC Role / Device Role / Timing Role: Passive switching element controlled by LO signal; performs RF-to-IF frequency translation. Use Value: Common-anode topology simplifies LO drive network; 0.55 pF CT ensures <0.5 dB conversion loss at 433 MHz. | Use Scenario: Envelope detector in AM receiver for 88–108 MHz broadcast band. IC Role / Device Role / Timing Role: Signal rectifier converting modulated RF carrier into baseband audio envelope. Use Value: Low 340 mV VF minimizes detection threshold; ≤20 mV VF matching suppresses even-order distortion. |
| High-Speed Switching | RF Sampling Gates |
Use Scenario: Transmit/receive (T/R) switch in 900 MHz RFID reader antenna interface. IC Role / Device Role / Timing Role: Fast RF path selector isolating PA output from LNA input during duplex operation. Use Value: 130 mA IF rating sustains pulsed TX current; 8–15 Ω RF resistance maintains <0.2 dB insertion loss. | Use Scenario: Sampling gate in 100 MS/s RF digitizer front end. IC Role / Device Role / Timing Role: Precision timing-controlled switch capturing RF waveform segments at defined intervals. Use Value: Sub-nanosecond turn-on delay enables accurate time-domain sampling; low CT preserves signal bandwidth up to 1 GHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR63-03W | Single diode, SOT323, 30 V VR, 100 mA IF, 0.35 pF CT | Lacks dual-element symmetry; requires external pairing for balanced mixers | Preferred when higher reverse voltage or lower capacitance is needed, but adds layout complexity |
| BAT54C | Dual common-cathode Schottky, SOT23, 30 V VR, 200 mA IF, 10 pF CT | Higher capacitance degrades UHF performance; different polarity limits mixer topology options | Acceptable for HF/VHF switching where capacitance <1 pF is not critical |
Compared with BAR63-03W and BAT54C, BAT17-06WE6327 uniquely delivers common-anode dual symmetry with sub-0.6 pF capacitance and matched VF - making it the only choice for compact, high-rejection double-balanced mixers below 1 GHz without discrete balancing components.
Availability
BAT17-06WE6327 is available at Aetrix Electronics and suitable for VHF/UHF mixer designs, RF sampling gate implementations, and high-speed T/R switching applications requiring stable component supply, consistent parametric binning, and RoHS-compliant packaging.
Supply support for BAT17-06WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and high-frequency discrete components.
The BAT17 series belongs to Infineon's RF Schottky diode product line, engineered specifically for low-distortion signal mixing, detection, and switching in wireless infrastructure, broadcast receivers, and industrial RF sensors.
FAQ
What is the pin 1 identification method for BAT17-06WE6327?
Pin 1 is marked by a small beveled corner on the SOT323 package body, located adjacent to lead 1. The marking "56s" appears on the top surface near pin 1, confirming the BAT17-06W variant per Infineon's standard coding. Visual inspection under 10× magnification confirms orientation prior to reflow.
Can BAT17-06WE6327 replace BAT17-05W in a design?
No - BAT17-06W uses a common-anode configuration, while BAT17-05W is common-cathode. Swapping them would invert bias polarity and disrupt RF signal routing. Layout redesign and schematic revision are required; electrical parameters also differ (e.g., RthJS = 690 K/W vs. 590 K/W).
Is thermal derating required for continuous RF operation?
Yes - at ambient temperatures above 25 °C, forward current must be reduced per the IF vs. TS curve for BAT17-06W. At 85 °C case temperature, max. IF drops to ~70 mA to maintain junction temperature ≤150 °C, based on RthJS ≤690 K/W and Ptot = 150 mW.
Does this diode require external bias for mixer operation?
No - BAT17-06WE6327 operates as a passive switching element in unpowered mixer topologies. LO drive provides forward bias during active half-cycles; no DC bias network is needed, preserving wideband RF port impedance and minimizing LO leakage.
BAT17-06WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- Schottky - 1 Pair Common Anode
- Voltage - Peak Reverse (Max):
- 4V
- Current - Max:
- 130 mA
- Capacitance @ Vr, F:
- 0.75pF @ 0V, 1MHz
- Resistance @ If, F:
- 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max):
- 150 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Supplier Device Package:
- PG-SOT323-3-1
BAT17-06WE6327 FAQ
1.How can I place an order for BAT17-06WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT17-06WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT17-06WE6327 reliable?
The price and inventory of BAT17-06WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT17-06WE6327 is usually 5 days.
3.What payment methods are accepted for BAT17-06WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT17-06WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT17-06WE6327?
BAT17-06WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT17-06WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT17-06WE6327?
For technical support, including BAT17-06WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT17-06WE6327 requirements.
6.How does Aetrix verify that BAT17-06WE6327 is sourced from the original manufacturer or authorized distributors?
All BAT17-06WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT17-06WE6327 meets industry standards.
7.What is the process for return or replacement of BAT17-06WE6327?
All BAT17-06WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAT17-06WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT17-06WE6327 part is unused and in its original packaging.
Return procedure for BAT17-06WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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