Infineon Technologies BAT1804E6327HTSA1

Overview

BAT1804E6327HTSA1 from Infineon Technologies is a silicon PIN diode RF switch optimized for VHF/UHF signal routing above 10 MHz, featuring 0.75 pF typical capacitance at 20 V reverse bias, 0.4 Ω typical forward resistance at 100 MHz/5 mA, and 120 ns reverse recovery time - deployed in antenna switching and transmit/receive (T/R) modules for FM radio and ISM-band transceivers.

For engineers reviewing the BAT1804E6327HTSA1 datasheet, BAT1804E6327HTSA1 pinout, BAT1804E6327HTSA1 application, or BAT1804E6327HTSA1 equivalent, key selection criteria include low RF insertion loss (<0.3 dB at 100 MHz), high isolation (>30 dB at 100 MHz), thermal resistance ≤290 K/W, and SOT23 common-cathode configuration compatibility with 3.3 V control logic.

Technical Context

This PIN diode operates as a voltage-controlled RF series/shunt switch via forward-bias conduction and reverse-bias depletion. Its 3 µm I-region width enables fast carrier lifetime (τ_rr = 120 ns) and low stored charge, supporting switching speeds suitable for burst-mode T/R sequencing in sub-1 GHz wireless systems.

Designed for DC–500 MHz operation, it delivers stable RF performance across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C and maximum reverse voltage rated at 35 V - enabling robust operation in battery-powered portable radios and industrial telemetry transmitters.

Key Specifications

Pinout & Package

SOT23-3 package with common-cathode configuration: Pin 1 = Anode 1, Pin 2 = Cathode (common), Pin 3 = Anode 2 - optimized for dual-path RF switching in compact PCB layouts with 2.9 mm × 1.3 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with BAT1804E6327HTSA1, BAT1805E6327HTSA1 offers identical RF switching performance and drop-in mechanical compatibility, while BAR6302VH6327XTSA1 trades off isolation and voltage rating for lower unit cost - making the BAT1804 optimal for thermally constrained, multi-band UHF front-ends demanding consistent 0.4 Ω r_f and 35 V robustness.

Availability

BAT1804E6327HTSA1 is available at Aetrix Electronics and suitable for FM radio antenna switching, ISM-band T/R modules, and portable two-way radio front-ends requiring stable component supply, full RoHS compliance, and guaranteed SOT23 tape-and-reel delivery.

Supply support for BAT1804E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BAT18xx devices belong to Infineon's high-frequency discrete diode product line, engineered specifically for low-loss RF signal routing in consumer, industrial, and telemetry wireless equipment operating below 500 MHz.

FAQ

What is the maximum RF frequency range supported by BAT1804E6327HTSA1?

BAT1804E6327HTSA1 is characterized for stable RF performance up to 500 MHz, with measured forward resistance and capacitance data validated at 100 MHz. Its 0.75 pF capacitance and 0.4 Ω resistance maintain usable insertion loss and isolation through UHF - confirmed in Infineon's EHD07020 application curves and 2011-06-14 datasheet revision.

Can BAT1804E6327HTSA1 be used in series-shunt switching configurations?

Yes - its common-cathode SOT23-3 pinout (Anode1–Cathode–Anode2) is explicitly designed for series-shunt RF switch topologies. The shared cathode simplifies DC bias network design, and the 35 V reverse voltage rating supports shunt-leg operation with up to ±15 V control swing in grounded-cathode layouts.

Is thermal derating required when operating at 100 mA DC forward current?

At 100 mA DC with ambient temperature at 85 °C, junction temperature reaches ~135 °C using R_thJS ≤290 K/W - within the 150 °C absolute maximum. Derating is not required for pulsed operation (e.g., 10% duty cycle), but continuous 100 mA demands adequate copper pour and airflow per Infineon's Thermal Resistance Application Note.

How does the 120 ns reverse recovery time impact TDD system timing?

A 120 ns τ_rr limits minimum T/R guard band to ~200 ns in time-division duplex systems. This supports LTE Cat-M1 and narrowband IoT frame structures with ≥500 µs slot spacing, but prohibits use in Bluetooth LE or Wi-Fi 6 where guard intervals fall below 100 ns - verified via Infineon's τ_rr test conditions (IF=10 mA, IR=6 mA, RL=100 Ω).