Infineon Technologies BAT1805E6327HTSA1

Overview

BAT1805E6327HTSA1 from Infineon Technologies is a silicon PIN diode RF switch optimized for VHF/UHF signal routing above 10 MHz, featuring 0.75 pF capacitance at 20 V, 0.4 Ω forward resistance at 100 MHz/5 mA, and 120 ns reverse recovery time - deployed in antenna switching and transmit/receive (T/R) modules for wireless infrastructure.

For engineers reviewing the BAT1805E6327HTSA1 datasheet, BAT1805E6327HTSA1 pinout, BAT1805E6327HTSA1 application, or BAT1805E6327HTSA1 equivalent, key selection criteria include low RF insertion loss (<0.3 dB typical at 900 MHz), high isolation (>30 dB at 1 GHz), thermal resistance ≤290 K/W, RoHS-compliant SOT23 packaging, and operation across –55 °C to +125 °C ambient.

Technical Context

This PIN diode operates as a voltage-controlled RF series/switch element in high-frequency front-end architectures. Its I-region width of 3 µm enables controlled charge carrier lifetime (τ_rr = 120 ns) and low stored charge, supporting fast switching between RF paths without harmonic distortion or transient overshoot.

The device uses common-cathode configuration in SOT23 package with three terminals: anode (Pin 1), cathode (Pin 2), and isolated cathode tie (Pin 3). Forward conduction is enabled by ≥10 mA DC bias, while reverse bias maintains high impedance up to 35 V, ensuring stable RF blocking under VSWR stress.

Key Specifications

Pinout & Package

SOT23-3 package with gull-wing leads, JEDEC TO-236AB compliant, 1.3 mm × 2.9 mm footprint, 1.15 mm height, and Pb-free matte tin plating. Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Cathode (common-cathode dual-diode configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SKY13370-374LF and BAR63-03W, BAT1805E6327HTSA1 offers optimal balance of low capacitance, fast recovery, and high-voltage robustness for 800–2500 MHz infrastructure-grade switching - especially where thermal margin and VSWR tolerance are critical.

Availability

BAT1805E6327HTSA1 is available at Aetrix Electronics and suitable for cellular base station T/R modules, ISM band transceivers, UHF RFID readers, and automotive RKE receivers requiring stable component supply across extended temperature and RF performance envelopes.

Supply support for BAT1805E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's BAT high-frequency PIN diode product line, engineered specifically for low-loss, high-isolation RF switching in wireless infrastructure and industrial communication systems operating from 10 MHz to 3 GHz.

FAQ

What is the maximum RF power handling capability of BAT1805E6327HTSA1?

The device supports peak RF power up to +33 dBm (2 W) at 900 MHz with 100 mA DC bias and proper thermal layout. Derating is required above 1 GHz due to rising r_f; at 2.4 GHz, max continuous RF power drops to +27 dBm (0.5 W) with 290 K/W junction-to-solder thermal path.

Can BAT1805E6327HTSA1 be used in series-shunt switch topologies?

Yes - its common-cathode SOT23-3 configuration supports both series and shunt switching. Pin 1 serves as RF input/output in series mode; Pins 2 and 3 provide low-inductance cathode grounding for shunt-path implementation, enabling SPDT-like behavior with external passive components.

Is BAT1805E6327HTSA1 qualified for automotive applications?

No - it is not AEC-Q200 qualified. While its operating temperature range (–55 °C to +125 °C) overlaps with automotive Grade 3, Infineon does not list this part in its automotive-qualified portfolio, and no PPAP documentation or stress test reports are published for automotive use cases.

How does forward bias current affect RF performance?

At IF = 5 mA, r_f = 0.4 Ω and C_T = 0.75 pF yield optimal loss/isolation trade-off. Increasing bias to 20 mA reduces r_f to 0.32 Ω but raises C_T to 0.82 pF, degrading high-frequency isolation. Below 2 mA, τ_rr increases beyond 150 ns, limiting switching speed in burst-mode systems.