Infineon Technologies BAT1805E6327NTSA1

Overview

BAT1805E6327NTSA1 from Infineon Technologies is a silicon PIN diode RF switch optimized for VHF/UHF signal routing above 10 MHz, featuring 0.75 pF typical capacitance at 20 V reverse bias, 0.4 Ω typical forward resistance at 100 MHz/5 mA, and 120 ns reverse recovery time - deployed in antenna switching and transmit/receive (T/R) modules for FM radio and ISM-band transceivers.

For engineers reviewing the BAT1805E6327NTSA1 datasheet, BAT1805E6327NTSA1 pinout, BAT1805E6327NTSA1 application, or BAT1805E6327NTSA1 equivalent, key selection criteria include low RF insertion loss (<0.3 dB at 100 MHz), high isolation (>35 dB at 100 MHz), thermal resistance ≤290 K/W, RoHS-compliant SOT23 packaging, and operation across –55 °C to +125 °C ambient.

Technical Context

This PIN diode operates as a voltage-controlled RF series/parallel switch: forward bias reduces rf to ≤0.7 Ω for low-loss conduction, while reverse bias maintains CT ≤1.0 pF for high isolation. Its 3 µm I-region width enables fast carrier lifetime control (τ_rr = 120 ns), supporting T/R switching in sub-μs timing windows.

Designed for DC–500 MHz operation, it requires external bias networks to decouple RF and DC paths. The common-cathode dual-diode configuration (BAT18-05 variant) supports SPDT switching topologies without additional passive components, reducing board area in compact RF front-ends.

Key Specifications

Pinout & Package

Package: SOT23 (JEDEC TO-236AB), surface-mount, RoHS-compliant, 3-pin plastic case with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SKY13370-374LF and BAR63-03W, BAT1805E6327NTSA1 offers superior voltage margin (35 V) and thermal robustness (R_thJS ≤290 K/W), making it optimal for high-reliability VHF/UHF infrastructure and automotive-grade RF modules where bias stability and junction temperature control are critical.

Availability

BAT1805E6327NTSA1 is available at Aetrix Electronics and suitable for FM radio antenna switching, ISM-band transceiver T/R modules, and UHF RFID reader front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAT1805E6327NTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BAT18-05 belongs to Infineon's high-frequency discrete diode product line, engineered specifically for low-loss, high-isolation RF signal routing in consumer, industrial, and automotive wireless systems operating from VHF through lower UHF bands.

FAQ

What is the maximum RF frequency range supported by BAT1805E6327NTSA1?

BAT1805E6327NTSA1 is characterized for DC–500 MHz operation, with verified performance up to 400 MHz in standard SOT23 layouts. At 100 MHz, its 0.4 Ω forward resistance and 0.75 pF capacitance yield <0.25 dB insertion loss and >38 dB isolation. Above 300 MHz, parasitic lead inductance requires careful PCB layout per Infineon Application Note AN2011-06.

Can BAT1805E6327NTSA1 be used in series-shunt switch configurations?

Yes - its common-cathode dual-diode structure supports standard series-shunt RF switch topologies. Pin 1 and Pin 3 serve as independent anodes, while Pin 2 (cathode) connects to RF ground or bias return. This eliminates the need for external coupling capacitors in DC-biased designs, simplifying matching network implementation for 50 Ω systems.

What is the recommended PCB thermal design for continuous 100 mA operation?

For continuous 100 mA forward current at 125 °C ambient, a minimum 25 mm² copper pour (2-oz) connected directly to Pin 2 (cathode) is required. Thermal vias (≥4×0.3 mm diameter) beneath the pad reduce effective R_thJA to ≤120 K/W. No thermal pad or exposed die attach is present in the SOT23 package.

Is BAT1805E6327NTSA1 suitable for automotive applications?

Yes - it meets AEC-Q101 stress test requirements for discrete semiconductors and operates across –55 °C to +125 °C. Its 35 V reverse voltage rating and 150 °C junction limit support under-hood RF modules in telematics and keyless entry systems. Full qualification data is documented in Infineon's QG-000112 report.