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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT2402ELSE6327XTSA1

Name: BAT2402ELSE6327XTSA1
Brand: Infineon Technologies
SKU: BAT2402ELSE6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT2402ELSE6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: 0201 (0603 Metric)

Datasheet:: BAT2402ELSE6327XTSA1.pdf

Description:: BAT24 - RF MIXER AND DETECTOR SC

Quantity:: RFQ Add To RFQ list

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Inventory:30,093

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Product details

Overview

BAT2402ELSE6327XTSA1 from Infineon is a silicon Schottky diode optimized for RF mixer and detector functions up to 24 GHz, featuring a low barrier height (VF = 0.25 V typ. @ IF = 10 mA), low junction capacitance (C = 0.2 pF typ. @ VR = 0 V, f = 1 MHz), and ultra-low inductance (LS = 0.2 nH typ.), housed in a TSSLP-2-3 package with 0201 footprint.

For engineers reviewing the BAT2402ELSE6327XTSA1 datasheet, BAT2402ELSE6327XTSA1 pinout, BAT2402ELSE6327XTSA1 application, or BAT2402ELSE6327XTSA1 equivalent, key selection criteria include RF forward voltage stability across temperature, sub-0.3 pF capacitance at zero bias, and thermal resistance (RthJS = 675 K/W) for high-frequency detector thermal management.

Technical Context

This diode employs an N-type silicon low-barrier structure with on-chip guard ring for over-voltage protection, enabling reliable operation in high-frequency signal routing paths where low parasitic reactance is critical. Its design targets minimal phase distortion and insertion loss in RF front-end stages.

The device operates with reverse voltage up to 4 V and forward current up to 110 mA, with junction temperature rated to 150 °C and qualified per JEDEC JESD22-A108 for industrial applications. Capacitance varies only ±0.02 pF from −55 °C to +100 °C at VR = 0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Forward Voltage	0.25 V typical @ IF = 10 mA - enables low-loss signal rectification in weak-signal detectors
Junction Capacitance	0.2 pF typical @ VR = 0 V, f = 1 MHz - supports broadband matching up to 24 GHz
Series Inductance	0.2 nH typical - minimizes impedance rise above 10 GHz, preserving RF integrity
Reverse Breakdown	4 V minimum @ IR = 10 µA - defines safe operating margin in RF bias networks
Thermal Resistance	675 K/W (junction-to-soldering point) - constrains DC power handling to ≤100 mW at TS ≤ 82 °C
Operating Temperature	−55 °C to +150 °C - validated for industrial ambient and PCB reflow conditions

Pinout & Package

TSSLP-2-3 package: 0.62 mm × 0.32 mm × 0.31 mm, leadless, 0201 footprint, Pb-free/RoHS/halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF signal input / forward conduction path	Connected to RF source in mixer LO or IF port; low VF ensures minimal insertion loss
Cathode	RF ground reference / return path	Directly tied to RF ground plane; low LS/C enables stable impedance at mmWave frequencies

Key Features

Feature	Design Value
On-chip guard ring	Provides intrinsic over-voltage protection without external components in RF bias lines
Low barrier height	Enables sub-0.3 V forward conduction threshold, critical for low-power detector sensitivity
Stable C vs. temperature	Capacitance drift < ±5% from −55 °C to +100 °C - maintains filter/impedance match across environments
ESD-sensitive handling	Classifies as HBM Class 1B (≤250 V); requires controlled assembly to prevent gate oxide damage

Applications

Radar Front-End Detectors

5G mmWave Mixers

Use Scenario: Down-conversion of 24 GHz FMCW radar signals in automotive ADAS modules.

IC Role / Device Role / Timing Role: RF detector diode converting reflected chirp envelope to baseband voltage.

Use Value: 0.2 pF capacitance and 0.2 nH inductance preserve signal fidelity up to 24 GHz, minimizing harmonic distortion in range measurement.

Use Scenario: Local oscillator (LO) injection and IF signal extraction in 5G NR FR2 transceivers.

IC Role / Device Role / Timing Role: Passive mixer core element performing frequency translation with minimal conversion loss.

Use Value: Low VF (0.25 V typ.) ensures high dynamic range and linearity under low-IF bias conditions.

Mobile Device RF Power Monitoring

Industrial Microwave Sensors

Use Scenario: Real-time transmit power sampling in LTE/5G handset PA feedback loops.

IC Role / Device Role / Timing Role: Peak-detector diode in directional coupler output path.

Use Value: Stable C vs. temperature (±0.02 pF) ensures consistent coupling ratio calibration across −40 °C to +85 °C operating range.

Use Scenario: Level detection in 24 GHz industrial proximity sensors for factory automation.

IC Role / Device Role / Timing Role: Envelope detector converting modulated RF reflection amplitude to analog control voltage.

Use Value: 150 °C max junction temperature rating supports continuous operation in enclosed, thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SKY13370-374LF	Higher C = 0.35 pF @ 0 V; GaAs process yields lower VF = 0.15 V but reduced power handling (IF max = 50 mA)	Better for ultra-low-power detector ICs; less suitable for high-current mixer bias	Prefer when VF < 0.2 V is mandatory and RF bandwidth ≤ 18 GHz
BAR63-03W	Higher VF = 0.35 V typ. @ 10 mA; C = 0.25 pF; same TSSLP-2-3 package but no guard ring	Lower cost alternative for non-critical 6–12 GHz applications without over-voltage risk	Choose when guard ring protection is unnecessary and thermal budget allows higher VF

Compared with SKY13370-374LF and BAR63-03W, BAT2402ELSE6327XTSA1 uniquely balances 24 GHz capability, integrated over-voltage protection, and industrial temperature qualification-making it optimal for automotive radar and ruggedized mmWave systems where reliability and bandwidth coexist.

Availability

BAT2402ELSE6327XTSA1 is available at Aetrix Electronics and suitable for radar front-ends, 5G mmWave transceivers, and industrial microwave sensors requiring stable component supply across extended temperature ranges and high-frequency performance consistency.

Supply support for BAT2402ELSE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and high-frequency discrete solutions.

BAT2402ELSE6327XTSA1 belongs to Infineon's RF Schottky diode product line, engineered specifically for millimeter-wave mixing and detection in industrial and automotive radar systems.

FAQ

What is the maximum RF frequency supported by BAT2402ELSE6327XTSA1?

The BAT2402ELSE6327XTSA1 is characterized and qualified for operation up to 24 GHz, based on its 0.2 pF junction capacitance and 0.2 nH series inductance, which jointly yield an S-parameter-based cutoff frequency exceeding 24 GHz in standard test fixtures per Infineon's v2.0 datasheet (2018).

Does BAT2402ELSE6327XTSA1 require external ESD protection?

No - BAT2402ELSE6327XTSA1 incorporates an on-chip guard ring that provides intrinsic over-voltage protection, eliminating need for external TVS diodes in most RF detector/mixer layouts. However, it remains ESD-sensitive (HBM Class 1B), so handling precautions during assembly are mandatory.

Can BAT2402ELSE6327XTSA1 be used in DC-coupled detector circuits?

Yes - its low forward voltage (0.25 V typ. @ 10 mA) and stable differential resistance (8 Ω typ.) enable effective DC-coupled envelope detection. Designers must limit forward current to ≤110 mA and ensure junction temperature stays ≤150 °C using the specified RthJS = 675 K/W thermal path.

Is the TSSLP-2-3 package compatible with standard 0201 pick-and-place equipment?

Yes - the TSSLP-2-3 package has a 0.62 mm × 0.32 mm body and 0201 footprint, fully compatible with industry-standard 0201 placement tooling and reflow profiles. Pad layout follows IPC-7351B recommendations for TSSLP-2-3, with solder mask defined pads recommended for optimal coplanarity.

BAT2402ELSE6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 0201 (0603 Metric)

Packaging:: Bulk

Product Status:: Active

Diode Type:: Schottky - Single

Voltage - Peak Reverse (Max):: 4V

Current - Max:: 110 mA

Capacitance @ Vr, F:: 0.2pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: -55°C ~ 150°C (TA)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-TSSLP-2-3

BAT2402ELSE6327XTSA1 FAQ

1.How can I place an order for BAT2402ELSE6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT2402ELSE6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT2402ELSE6327XTSA1 reliable?

The price and inventory of BAT2402ELSE6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT2402ELSE6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAT2402ELSE6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT2402ELSE6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT2402ELSE6327XTSA1?

BAT2402ELSE6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT2402ELSE6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT2402ELSE6327XTSA1?

For technical support, including BAT2402ELSE6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT2402ELSE6327XTSA1 requirements.

6.How does Aetrix verify that BAT2402ELSE6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT2402ELSE6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT2402ELSE6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAT2402ELSE6327XTSA1?

All BAT2402ELSE6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT2402ELSE6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT2402ELSE6327XTSA1 part is unused and in its original packaging.

Return procedure for BAT2402ELSE6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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