Infineon Technologies BAT62-02LSE6327

Overview

BAT62-02LSE6327 from Infineon Technologies is a silicon Schottky barrier diode optimized for RF detector and mixer applications up to 1 GHz, featuring low forward voltage (0.58 V typ. at 2 mA), ultra-low junction capacitance (0.35 pF typ. at 0 V), and reverse voltage rating of 40 V. It is packaged in the leadless TSSLP-2-1 surface-mount package with 0.2 nH series inductance and RoHS-compliant construction.

For engineers reviewing the BAT62-02LSE6327 datasheet, BAT62-02LSE6327 pinout, BAT62-02LSE6327 application, or BAT62-02LSE6327 equivalent, key selection criteria include RF detector linearity, low-voltage signal rectification capability, thermal resistance (RthJS ≤ 420 K/W), and compatibility with high-frequency PCB layouts requiring minimal parasitic inductance.

Technical Context

This diode operates as a zero-bias or low-bias RF detector, leveraging its low-barrier Schottky junction to achieve sub-0.6 V forward conduction and sub-0.4 pF capacitance - critical for preserving signal integrity in 900 MHz receiver front-ends. Its differential resistance of 225 kΩ at 10 kHz enables high-impedance sensing without loading sensitive RF nodes.

The TSSLP-2-1 package delivers 0.2 nH internal inductance and supports reflow-compatible assembly, while the 40 V VR rating and 20 mA IF rating define its safe operating area for intermittent RF envelope detection under thermal constraints (Tj ≤ 150 °C).

Key Specifications

Pinout & Package

The BAT62-02LSE6327 is housed in the TSSLP-2-1 (Thin Small Outline Transistor Leadless Package, 2-terminal) - a bottom-terminated, leadless chip-scale package with exposed cathode and anode pads on opposite ends of the die. No external leads; soldering is via two coplanar copper terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF detector diode applications.

Compared with SKY13370-374LF and BAR63-02V, the BAT62-02LSE6327 offers superior high-frequency fidelity (0.2 nH, 0.35 pF), tighter VF matching, and higher reverse voltage margin - making it optimal for compact, high-sensitivity 900 MHz detector designs where parasitic control is critical.

Availability

BAT62-02LSE6327 is available at Aetrix Electronics and suitable for ISM band receivers, RFID readers, wireless remote controls, and low-power IoT sensor nodes requiring stable component supply and consistent RF performance across production batches.

Supply support for BAT62-02LSE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in silicon and SiC power devices and high-frequency discrete components.

The BAT62 series belongs to Infineon's RF Schottky diode product line, engineered specifically for high-efficiency, low-noise RF detection, mixing, and switching in sub-3 GHz wireless infrastructure and end-user equipment.

FAQ

What is the maximum operating frequency for reliable detection with BAT62-02LSE6327?

The BAT62-02LSE6327 is characterized for RF detector operation up to 1 GHz, with verified performance at 900 MHz in application circuits. Its 0.35 pF capacitance and 0.2 nH package inductance yield an inherent resonant limit beyond 3 GHz, but practical detection linearity and sensitivity are validated through 1 GHz per Infineon's 2011 characterization data.

Can BAT62-02LSE6327 be used in zero-bias detector configurations?

Yes - its low-barrier Schottky structure and 0.58 V typical forward voltage enable effective zero-bias RF detection. Application curves confirm usable output voltage generation from −20 dBm input signals at 900 MHz without external DC bias, making it ideal for passive receiver front-ends.

Is BAT62-02LSE6327 suitable for RF energy harvesting?

Yes - its low forward voltage, ultra-low capacitance, and TSSLP-2-1 package minimize losses in multi-diode voltage multiplier topologies. Measured RF-to-DC conversion efficiency exceeds 35% at 900 MHz and −10 dBm input in matched 2-stage Dickson configurations.

How does thermal resistance impact long-term reliability in compact RF modules?

With RthJS ≤ 420 K/W, the BAT62-02LSE6327 limits junction temperature rise to ≤42 °C above case temperature at 20 mA DC current. In sealed RF modules operating at 85 °C ambient, this keeps Tj below 127 °C - well within the 150 °C absolute maximum, ensuring >10-year operational life per JEDEC JESD22-A108.