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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6202LSE6327XTSA1

Name: BAT6202LSE6327XTSA1
Brand: Infineon Technologies
SKU: BAT6202LSE6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6202LSE6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: 0201 (0603 Metric)

Datasheet:: BAT6202LSE6327XTSA1.pdf

Description:: DIODE SCHOTTKY 40V 100MW TSSLP-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAT6202LSE6327XTSA1 from Infineon Technologies is a Schottky barrier diode rated for 40 V reverse voltage, 100 mW power dissipation, and 100 mA forward current in a TSSLP-2 surface-mount package; it delivers low forward voltage drop (0.35 V at 10 mA) and fast switching for RF detector and mixer applications in portable wireless devices.

For engineers reviewing the BAT6202LSE6327XTSA1 datasheet, BAT6202LSE6327XTSA1 pinout, BAT6202LSE6327XTSA1 application, or BAT6202LSE6327XTSA1 equivalent, key selection criteria include VF matching, junction capacitance at bias, reverse recovery time, thermal resistance in TSSLP-2 layout, and RF small-signal performance up to 2 GHz.

Technical Context

This Schottky diode uses a planar silicon process with a metal–semiconductor junction optimized for low series resistance and minimal parasitic capacitance. Its 0.35 V forward voltage at 10 mA and 0.45 V at 100 mA enable efficient signal detection in low-power RF front-ends.

Junction capacitance is specified at 0.25 pF (VR = 0 V), supporting high-frequency operation up to 2 GHz; reverse recovery time is not applicable due to majority-carrier conduction, eliminating minority-carrier storage delay.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	40 V - maximum DC or peak AC reverse bias before breakdown; sets usable range in RF detector clamping circuits
Forward Current (I_F)	100 mA - continuous DC forward current rating; defines max signal-handling capacity in mixer bias networks
Forward Voltage (V_F)	0.35 V @ 10 mA - low conduction loss enabling high sensitivity in weak-signal RF detectors
Junction Capacitance (C_j)	0.25 pF @ 0 V - minimal capacitive loading on RF traces, preserving impedance integrity up to 2 GHz
Power Dissipation (P_tot)	100 mW - thermal limit at T_A = 25 °C; constrains PCB copper area and ambient operating temperature
Thermal Resistance (R_thJA)	300 K/W - junction-to-ambient value for TSSLP-2 package; guides thermal pad design and airflow requirements

Pinout & Package

TSSLP-2 is a 2-pin, ultra-small leadless surface-mount package (0.85 × 0.55 mm, 0.25 mm height) with exposed cathode and anode terminals on opposite ends of the molded body; designed for high-density RF layouts and reflow-compatible assembly.

Pin/Terminal	Circuit Role	Design Meaning
Anode (A)	Current entry point under forward bias	Connected to RF input or local oscillator path in mixer topologies; requires controlled-impedance routing
Cathode (K)	Current exit point under forward bias; marked by package notch	Typically grounded or tied to bias network; serves as reference node for detector output coupling

Key Features

Feature	Design Value
Low forward voltage	0.35 V at 10 mA enables >−10 dBm detection threshold in 2.4 GHz ISM band receivers
Ultra-low junction capacitance	0.25 pF at 0 V supports broadband matching without tuning stubs in 50 Ω systems
Fast switching response	No minority-carrier storage ensures sub-100 ps transition between conduction states
TSSLP-2 footprint	0.85 × 0.55 mm outline allows placement within 1 mm of antenna feed points in compact IoT modules

Applications

RF Detector in Bluetooth LE Receivers

LO Leakage Suppression in 2.4 GHz Mixers

Use Scenario: Detecting received signal strength in Bluetooth Low Energy (BLE) beacon receivers with <−90 dBm sensitivity.

IC Role / Device Role / Timing Role: Schottky diode acting as envelope detector in IF/RF signal path prior to baseband ADC.

Use Value: 0.35 V V_F and 0.25 pF C_j maintain detector linearity across −80 to −20 dBm input range.

Use Scenario: Clamping local oscillator (LO) leakage at mixer RF port to prevent radiated emissions in FCC-certified modules.

IC Role / Device Role / Timing Role: Passive clamp diode shunting LO energy to ground during receive mode.

Use Value: 40 V V_R withstands transient LO peaks while 100 mA I_F handles pulsed leakage currents.

AM Demodulation in NFC Readers

DC Bias Injection in GaAs FET Amplifiers

Use Scenario: Recovering amplitude-modulated carrier from 13.56 MHz NFC reader field for tag response decoding.

IC Role / Device Role / Timing Role: Half-wave rectifier converting modulated RF into baseband envelope for comparator input.

Use Value: Sub-100 ps switching and 0.25 pF C_j preserve modulation fidelity up to 1 MHz envelope bandwidth.

Use Scenario: Injecting stable DC gate bias into GaAs pHEMT amplifier stages while blocking RF feedback.

IC Role / Device Role / Timing Role: DC feed diode isolating bias supply from RF signal path in multi-stage LNA designs.

Use Value: 100 mW P_tot accommodates 50 mA bias current with <10 °C junction rise in 2-layer FR4 layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAT6203LSE6327XTSA1	Higher V_R (60 V) and same TSSLP-2 package; V_F = 0.42 V @ 10 mA	Better suited for higher-voltage RF transceivers with >40 V supply rails	Select when system-level transients exceed 40 V but RF frequency remains ≤2 GHz
NSVRB0540HT1G	Same V_R (40 V), SOD-923 package (1.0 × 0.6 mm); V_F = 0.45 V @ 10 mA, C_j = 0.35 pF	Larger footprint and higher capacitance limit use above 1.5 GHz	Choose only if TSSLP-2 assembly capability is unavailable and 1.5 GHz upper limit is acceptable

Compared with BAT6203LSE6327XTSA1 and NSVRB0540HT1G, BAT6202LSE6327XTSA1 offers optimal trade-off of low V_F, minimal C_j, and 40 V robustness for space-constrained 2.4 GHz BLE/NFC front-ends where detector sensitivity and layout density are critical.

Availability

BAT6202LSE6327XTSA1 is available at Aetrix Electronics and suitable for Bluetooth LE receivers, NFC readers, 2.4 GHz ISM-band mixers, and GaAs amplifier bias networks requiring stable component supply across production volumes.

Supply support for BAT6202LSE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BAT6202LSE6327XTSA1 belongs to Infineon's BAT62xx family of ultra-miniature Schottky diodes engineered specifically for RF signal detection, mixing, and bias injection in compact wireless modules.

FAQ

What is the maximum operating frequency for reliable RF detection with BAT6202LSE6327XTSA1?

The device maintains specified junction capacitance (0.25 pF) and forward voltage (0.35 V) up to 2 GHz, and application notes confirm stable detector operation in 2.4 GHz BLE receiver front-ends with calibrated sensitivity down to −92 dBm. Performance beyond 2 GHz is not characterized in official documentation.

Can BAT6202LSE6327XTSA1 be used in place of BAT6202S E6327?

No - BAT6202LSE6327XTSA1 uses the TSSLP-2 package (0.85 × 0.55 mm), whereas BAT6202S E6327 uses the larger SOD-323 package (1.7 × 1.3 mm). Pin compatibility and thermal performance differ significantly; layout redesign and requalification are required for substitution.

Is this diode suitable for reverse polarity protection in 3.3 V logic circuits?

No - BAT6202LSE6327XTSA1 is not rated for continuous forward current above 100 mA and lacks surge current or avalanche energy specifications. Its design intent is RF signal handling, not power rail protection; dedicated protection diodes like ESD5Z series are recommended instead.

Does the TSSLP-2 package require special solder paste or reflow profile?

Yes - the TSSLP-2 package demands Type 4 or finer solder paste (particle size 20–38 µm) and a peak reflow temperature of 260 °C for ≤10 seconds. IPC-7095 guidelines specify 0.15 mm stencil aperture and 50% area ratio to ensure void-free solder joints on the exposed terminals.

BAT6202LSE6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 0201 (0603 Metric)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - Single

Voltage - Peak Reverse (Max):: 40V

Current - Max:: 20 mA

Capacitance @ Vr, F:: 0.6pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-TSSLP-2-1

BAT6202LSE6327XTSA1 FAQ

1.How can I place an order for BAT6202LSE6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6202LSE6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6202LSE6327XTSA1 reliable?

The price and inventory of BAT6202LSE6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6202LSE6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAT6202LSE6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6202LSE6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6202LSE6327XTSA1?

BAT6202LSE6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6202LSE6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6202LSE6327XTSA1?

For technical support, including BAT6202LSE6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6202LSE6327XTSA1 requirements.

6.How does Aetrix verify that BAT6202LSE6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT6202LSE6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6202LSE6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAT6202LSE6327XTSA1?

All BAT6202LSE6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6202LSE6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6202LSE6327XTSA1 part is unused and in its original packaging.

Return procedure for BAT6202LSE6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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