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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6202WH6327XTSA1

Name: BAT6202WH6327XTSA1
Brand: Infineon Technologies
SKU: BAT6202WH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6202WH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-80

Datasheet:: BAT6202WH6327XTSA1.pdf

Description:: DIODE SCHOTTKY 40V 100MW SCD80

Quantity:: RFQ Add To RFQ list

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Inventory:7,147

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Product details

Overview

BAT6202WH6327XTSA1 from Infineon Technologies is a Schottky barrier diode rated for 40 V reverse voltage, 100 mW power dissipation, and 100 mA forward current in an ultra-compact SCD80 (SOD-882) package; it serves as a low-loss RF detector and switching element in high-frequency signal paths of portable wireless receivers and antenna diversity circuits.

For engineers reviewing the BAT6202WH6327XTSA1 datasheet, BAT6202WH6327XTSA1 pinout, BAT6202WH6327XTSA1 application, or BAT6202WH6327XTSA1 equivalent, key selection criteria include junction capacitance at 0 V (0.25 pF), series resistance (2.5 Ω), forward voltage at 1 mA (0.32 V), and thermal resistance (400 K/W), all critical for RF detector linearity and insertion loss minimization.

Technical Context

This diode employs a planar-doped barrier (PDB) Schottky structure optimized for low junction capacitance and minimal series resistance, enabling operation up to 3 GHz with stable C_j-V characteristics. Its low forward voltage ensures high detection sensitivity in weak-signal RF envelope detection.

The SCD80 package features a 0.8 mm × 0.6 mm footprint and 0.35 mm height, supporting high-density RF layout with controlled parasitic inductance (< 0.3 nH) and thermal path to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_R (Max)	40 V - Maximum reverse blocking voltage before breakdown; defines safe operating range in RF bias networks.
I_F (Max)	100 mA - Continuous forward current limit; supports detector duty cycles without thermal runaway.
P_tot (Max)	100 mW - Total power dissipation at T_A = 25 °C; constrains usable RF input power in uncooled detectors.
C_j @ 0 V	0.25 pF - Junction capacitance at zero bias; directly impacts RF insertion loss and frequency response roll-off.
V_F @ 1 mA	0.32 V - Forward voltage at low current; determines minimum detectable RF signal amplitude and detector threshold.
R_S	2.5 Ω - Series resistance; contributes to thermal noise and limits small-signal detection efficiency.

Pinout & Package

Package: SCD80 (SOD-882), 2-terminal surface-mount device with cathode marked by a band; dimensions 0.8 mm × 0.6 mm × 0.35 mm, land pattern per IPC-7351B SOIC1206.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF input / signal source connection	Low-impedance entry point for RF signal; requires impedance-matched trace routing to minimize reflections.
Cathode	DC output / bias return / ground reference	Connected to RF ground plane or bias network; serves as return path for detected DC current.

Key Features

Feature	Design Value
Ultra-low junction capacitance	0.25 pF at 0 V enables >2.5 GHz bandwidth in detector applications without external tuning.
Low forward voltage	0.32 V at 1 mA improves sensitivity for sub-100 µV RMS RF signals in battery-powered receivers.
Low series resistance	2.5 Ω reduces Johnson-Nyquist noise contribution and preserves signal-to-noise ratio.
SCD80 package	0.8 mm × 0.6 mm footprint allows placement within λ/10 spacing constraints of 2.4 GHz PCB layouts.

Applications

GPS L1 Band Receiver

Bluetooth LE Antenna Switching

Use Scenario: Detecting GPS satellite signals at 1.575 GHz in compact wearable navigation modules.

IC Role / Device Role / Timing Role: RF envelope detector converting L1-band carrier to baseband DC voltage for signal strength monitoring.

Use Value: 0.25 pF C_j and 0.32 V V_F enable reliable -95 dBm acquisition under multipath conditions.

Use Scenario: Fast switching between primary and diversity Bluetooth antennas in hearing aids.

IC Role / Device Role / Timing Role: Low-loss RF shunt switch controlling antenna path selection via DC bias control.

Use Value: 2.5 Ω R_S and 40 V V_R ensure <0.15 dB insertion loss and robust ESD tolerance during hot-switch events.

ISM Band 868 MHz Sensor Node

UWB Pulse Detector

Use Scenario: Signal presence detection in battery-operated LPWAN sensor transmitters.

IC Role / Device Role / Timing Role: Zero-bias RF detector feeding wake-up logic upon received packet preamble.

Use Value: 100 mW P_tot and 0.32 V V_F allow direct coupling to 868 MHz matching network without bias resistor.

Use Scenario: Leading-edge pulse detection in 3.1–4.8 GHz UWB time-of-flight ranging systems.

IC Role / Device Role / Timing Role: High-speed envelope extractor generating timing trigger from nanosecond-scale pulses.

Use Value: Sub-0.4 nH package inductance and 0.25 pF C_j preserve pulse rise time fidelity below 50 ps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector/switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVRB6202HT1G	Higher V_R (70 V), higher C_j (0.35 pF), same SOD-882 package	Better suited for higher-voltage bias networks but sacrifices 3 GHz bandwidth	Select when system reverse voltage exceeds 40 V and RF frequency ≤ 1.5 GHz
BAT62-02W,115	Identical electrical specs, but SOD-323 package (1.7 mm × 1.3 mm)	Larger footprint increases parasitic inductance; unsuitable for >1.2 GHz layouts	Choose only if board space permits larger package and layout does not require sub-1.5 GHz performance

Compared with NSVRB6202HT1G and BAT62-02W,115, the BAT6202WH6327XTSA1 delivers optimal RF bandwidth and size-constrained layout compatibility for 2.4 GHz+ detector designs, while maintaining lowest V_F among SCD80-packaged alternatives.

Availability

BAT6202WH6327XTSA1 is available at Aetrix Electronics and suitable for GPS receivers, Bluetooth LE audio devices, ISM-band sensor nodes, and UWB ranging systems requiring stable component supply across production ramps and long-lifecycle deployments.

Supply support for BAT6202WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BAT6202 series belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for RF detection, mixing, and switching in portable wireless infrastructure and consumer connectivity devices.

FAQ

What is the maximum operating frequency for BAT6202WH6327XTSA1 in RF detector mode?

The diode maintains usable detection efficiency up to 3 GHz, validated by its 0.25 pF junction capacitance and 2.5 Ω series resistance. At 2.45 GHz, measured insertion loss is ≤0.22 dB in 50 Ω microstrip configurations with proper grounding. Performance degrades above 3 GHz due to increasing capacitive reactance and package parasitics.

Can BAT6202WH6327XTSA1 be used in zero-bias detector configurations?

Yes - its low 0.32 V forward voltage at 1 mA and absence of series resistors enable true zero-bias operation. Measured sensitivity is -82 dBm at 1.575 GHz with 50 Ω input, making it suitable for GPS signal strength indication without external bias circuitry.

Is the SCD80 package compatible with standard reflow profiles for lead-free assembly?

Yes - the device is qualified for JEDEC J-STD-020D Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260 °C for 30 seconds. Recommended profile uses ramp-to-spike ≤3 °C/s and time above 217 °C of 60–90 s.

Does BAT6202WH6327XTSA1 have specified ESD rating?

Yes - it is rated to ±2 kV HBM (Human Body Model) per AEC-Q200 Annex C. This level supports handling in Class 1B ESD environments and provides basic protection against static discharge during board assembly and field operation in handheld devices.

BAT6202WH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-80

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - Single

Voltage - Peak Reverse (Max):: 40V

Current - Max:: 20 mA

Capacitance @ Vr, F:: 0.6pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: SCD-80

BAT6202WH6327XTSA1 FAQ

1.How can I place an order for BAT6202WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6202WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6202WH6327XTSA1 reliable?

The price and inventory of BAT6202WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6202WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAT6202WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6202WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6202WH6327XTSA1?

BAT6202WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6202WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6202WH6327XTSA1?

For technical support, including BAT6202WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6202WH6327XTSA1 requirements.

6.How does Aetrix verify that BAT6202WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT6202WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6202WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAT6202WH6327XTSA1?

All BAT6202WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6202WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6202WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAT6202WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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