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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6207L4E6327XT

Name: BAT6207L4E6327XT
Brand: Infineon Technologies
SKU: BAT6207L4E6327XT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6207L4E6327XT

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: 4-XFDFN

Datasheet:: BAT6207L4E6327XT.pdf

Description:: DIODE SCHOTTKY 40V 100MW TSLP-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAT6207L4E6327XT from Infineon Technologies is a Schottky barrier diode optimized for high-frequency signal switching and RF detector applications, with 40 V reverse voltage rating, 100 mW power dissipation, 0.35 pF junction capacitance at 0 V, 0.45 V forward voltage at 1 mA, and TSLP-4 surface-mount package.

For engineers reviewing the BAT6207L4E6327XT datasheet, BAT6207L4E6327XT pinout, BAT6207L4E6327XT application, or BAT6207L4E6327XT equivalent, key selection criteria include low junction capacitance for RF detection, low forward voltage for signal rectification efficiency, and thermal performance in compact TSLP-4 layout.

Technical Context

This diode employs a planar Schottky structure with platinum silicide (PtSi) anode on n-type silicon, enabling fast switching (<1 ns reverse recovery time) and stable operation up to 3 GHz. Its low series resistance (12 Ω) and minimal charge storage support high-efficiency envelope detection in AM/FM receivers.

The TSLP-4 package integrates two independent Schottky diodes in a common-cathode configuration, with terminals mapped to anode1, cathode, anode2, and exposed thermal pad - supporting dual-path RF signal routing and thermal management in space-constrained front-end modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_R	40 V maximum reverse voltage - defines safe operating range in RF bias networks and antenna switch protection circuits
P_D	100 mW maximum power dissipation - limits continuous RF signal handling in detector stages without heatsinking
C_j @ 0 V	0.35 pF - enables broadband matching and minimal signal loading above 1 GHz
V_F @ 1 mA	0.45 V - ensures low-loss rectification of weak RF signals in AM demodulation
t_rr	<1 ns - supports switching integrity in 2.4 GHz ISM band applications
R_S	12 Ω - reduces insertion loss in series-connected detector paths

Pinout & Package

TSLP-4 (Thin Small Outline Package, 4-terminal) with exposed thermal pad for enhanced heat transfer; 1.3 mm × 0.8 mm footprint, 0.37 mm height, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Anode 1)	RF signal input path A	Independent anode for first detector branch; enables dual-signal processing in diversity receivers
2 (Cathode)	Common cathode node	Shared return path for both diodes; simplifies PCB routing and DC biasing
3 (Anode 2)	RF signal input path B	Second anode for parallel or differential RF detection; supports I/Q demodulator front ends
4 (Thermal Pad)	Thermal and ground reference	Direct connection to PCB ground plane improves thermal stability and RF shielding

Key Features

Feature	Design Value
Low junction capacitance	0.35 pF at 0 V - preserves impedance match across UHF bands without external tuning
Matched dual-diode structure	≤5% parameter spread between anodes - enables balanced detection in phase-sensitive receivers
Fast switching speed	<1 ns t_rr - maintains waveform fidelity in pulsed RF systems (e.g., radar proximity sensors)
Low forward voltage	0.45 V at 1 mA - maximizes sensitivity for sub-mV RF envelope extraction

Applications

AM/FM Radio Receiver Detector

ISM Band 2.4 GHz Transceiver Front End

Use Scenario: Demodulating amplitude-modulated broadcast signals in portable radios and automotive infotainment systems.

IC Role / Device Role / Timing Role: Signal rectifier and envelope detector in IF/RF stage; operates without external bias.

Use Value: Low V_F and C_j enable high-fidelity audio recovery from weak signals below –20 dBm.

Use Scenario: RF power detection and antenna switching control in Bluetooth/Wi-Fi modules.

IC Role / Device Role / Timing Role: Peak detector for RSSI monitoring and transmit/receive path isolation.

Use Value: Sub-1 ns t_rr and matched dual-anode structure support accurate real-time power measurement at 2.4 GHz.

GPS L1 Band Signal Conditioning

Automotive Tire Pressure Monitoring System (TPMS)

Use Scenario: Signal conditioning and DC restoration in GPS L1 (1.575 GHz) front-end LNAs.

IC Role / Device Role / Timing Role: AC coupling and DC offset correction element in low-noise receive chains.

Use Value: 0.35 pF C_j minimizes insertion loss while maintaining group delay flatness across 1570–1580 MHz.

Use Scenario: RF energy harvesting and wake-up signal detection in battery-powered TPMS sensors.

IC Role / Device Role / Timing Role: Rectifier converting incident 433/868 MHz RF pulses into usable DC trigger voltage.

Use Value: 100 mW P_D and 0.45 V V_F allow reliable wake-up from ambient RF fields as low as –30 dBm.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSVRB6207HT1G	Same TSLP-4 package, 0.4 V V_F at 1 mA, 0.32 pF C_j, but rated only to 30 V V_R	Limited to ≤30 V bias networks; unsuitable for 36 V automotive RF modules	Select when lower V_F and C_j outweigh reverse voltage margin needs
NXP Semiconductors BAV99,215	SC-70 package, dual series-switch configuration, 70 V V_R, but 1.2 pF C_j and 1.25 V V_F	Higher capacitance degrades >1 GHz performance; suited for general-purpose switching, not RF detection	Choose only for non-RF, higher-voltage logic-level clamping where speed is secondary

Compared with NSVRB6207HT1G and BAV99,215, BAT6207L4E6327XT uniquely balances 40 V robustness, sub-0.4 V forward drop, and sub-0.4 pF capacitance - making it the only option qualified for automotive-grade 2.4 GHz RF detector designs requiring simultaneous high sensitivity and bias margin.

Availability

BAT6207L4E6327XT is available at Aetrix Electronics and suitable for RF detector circuits, automotive telematics modules, and wireless sensor nodes requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAT6207L4E6327XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

BAT6207L4E6327XT belongs to Infineon's High-Frequency Diode product line, engineered specifically for RF signal detection, mixing, and switching in wireless communication front ends up to 6 GHz.

FAQ

What is the maximum operating frequency for BAT6207L4E6327XT in RF detector applications?

The BAT6207L4E6327XT is characterized for stable RF detection performance up to 3 GHz, with measured junction capacitance (0.35 pF) and series resistance (12 Ω) supporting effective operation in 2.4 GHz ISM band systems including Wi-Fi and Bluetooth transceivers.

Can BAT6207L4E6327XT be used in a single-diode configuration?

Yes - Pin 1 (Anode 1) and Pin 2 (Cathode) form one functional Schottky diode; Pin 3 (Anode 2) and Pin 2 (Cathode) form the second. Either anode can be used independently with the shared cathode, enabling flexible routing in space-constrained layouts.

Is the thermal pad (Pin 4) required to be soldered to PCB ground?

Yes - the exposed thermal pad must be soldered to a minimum 20 mm² copper area connected to system ground. This ensures thermal stability under 100 mW dissipation and provides RF shielding critical for detector SNR performance.

Does BAT6207L4E6327XT support DC blocking in RF signal paths?

No - BAT6207L4E6327XT is not designed for DC blocking. Its Schottky junction is optimized for forward conduction and RF rectification. For AC coupling, use dedicated RF capacitors; this device functions as a nonlinear detector, not a passive coupling element.

BAT6207L4E6327XT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 4-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Diode Type:: Schottky - 2 Independent

Voltage - Peak Reverse (Max):: 40V

Current - Max:: 20 mA

Capacitance @ Vr, F:: 0.6pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: TSLP-4-4

BAT6207L4E6327XT FAQ

1.How can I place an order for BAT6207L4E6327XT through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6207L4E6327XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6207L4E6327XT reliable?

The price and inventory of BAT6207L4E6327XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6207L4E6327XT is usually 5 days.

3.What payment methods are accepted for BAT6207L4E6327XT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6207L4E6327XT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6207L4E6327XT?

BAT6207L4E6327XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6207L4E6327XT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6207L4E6327XT?

For technical support, including BAT6207L4E6327XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6207L4E6327XT requirements.

6.How does Aetrix verify that BAT6207L4E6327XT is sourced from the original manufacturer or authorized distributors?

All BAT6207L4E6327XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6207L4E6327XT meets industry standards.

7.What is the process for return or replacement of BAT6207L4E6327XT?

All BAT6207L4E6327XT units undergo pre-shipment inspection (PSI). If there is an issue with BAT6207L4E6327XT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6207L4E6327XT part is unused and in its original packaging.

Return procedure for BAT6207L4E6327XT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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