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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6207L4E6433XTMA1

Name: BAT6207L4E6433XTMA1
Brand: Infineon Technologies
SKU: BAT6207L4E6433XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6207L4E6433XTMA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: 4-XFDFN

Datasheet:: BAT6207L4E6433XTMA1.pdf

Description:: DIODE SCHOTTKY 40V 100MW TSLP-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAT6207L4E6433XTMA1 from Infineon Technologies is a Schottky barrier diode rated for 40 V reverse voltage, 100 mW power dissipation, and low forward voltage drop (VF = 380 mV at IF = 1 mA), optimized for RF detector and mixer applications in portable wireless devices.

For engineers reviewing the BAT6207L4E6433XTMA1 datasheet, BAT6207L4E6433XTMA1 pinout, BAT6207L4E6433XTMA1 application, or BAT6207L4E6433XTMA1 equivalent, key selection criteria include low junction capacitance (CJ = 0.25 pF at VR = 0 V), fast switching speed (trr < 1 ns), and TSLP-4 surface-mount package compatibility with high-frequency PCB layout constraints.

Technical Context

This Schottky diode uses a planar-doped barrier structure to achieve low series resistance and minimal charge storage, enabling operation up to 3 GHz in small-signal detection. Its low VF and sub-picofarad capacitance support high sensitivity in zero-bias RF envelope detection circuits.

The device operates without external bias, leveraging its inherent low turn-on voltage and negligible reverse recovery charge. It is characterized at 1 MHz and 1 GHz for impedance matching and S-parameter modeling in RF front-end designs.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (VR)	40 V - Maximum DC or peak RF reverse voltage before breakdown; sets usable range in antenna coupling networks.
Forward Voltage (VF)	380 mV at IF = 1 mA - Enables zero-bias operation in RF detectors without supply rail dependency.
Junction Capacitance (CJ)	0.25 pF at VR = 0 V - Minimizes signal loading at UHF/SHF frequencies; critical for 2.4 GHz ISM band matching.
Power Dissipation (Ptot)	100 mW - Limits thermal rise in compact RF modules; requires trace thermal design per JEDEC Std. 51-3.
Reverse Recovery Time (trr)	< 1 ns - Ensures fidelity in pulse-modulated RF signals (e.g., Bluetooth LE, Zigbee) without distortion.
Operating Temperature	−65 °C to +150 °C - Supports automotive under-hood and industrial IoT sensor node deployment.

Pinout & Package

TSLP-4 (Thin Small Outline Package, 4-terminal) with 0.5 mm pitch, 1.1 × 0.7 × 0.37 mm body dimensions, and exposed cathode pad for thermal and RF grounding.

Pin/Terminal	Circuit Role	Design Meaning
Anode 1	RF input / signal anode	Primary RF signal entry point; bonded to die top metallization for minimal inductance.
Cathode 1	RF ground / return path	Connected to exposed thermal pad; serves as RF reference and heat sink in microstrip layouts.
Anode 2	Redundant anode / symmetry pin	Electrically tied to Anode 1 internally; improves mechanical stability and current sharing in dual-path detectors.
Cathode 2	Redundant cathode / symmetry pin	Internally connected to Cathode 1 and thermal pad; enhances solder joint reliability and RF grounding uniformity.

Key Features

Feature	Design Value
Zero-bias RF detection capability	Enables elimination of bias circuitry in battery-powered receivers, reducing component count and quiescent current.
Ultra-low junction capacitance	0.25 pF allows direct integration into 50 Ω microstrip lines without impedance-matching components at 2.4 GHz.
Sub-nanosecond switching	trr < 1 ns preserves modulation integrity in OFDM and FSK waveforms used in Wi-Fi and BLE.
TSLP-4 package with thermal pad	0.37 mm profile supports ultra-thin mobile device stacking; exposed cathode pad lowers thermal resistance to PCB by 45 K/W.

Applications

ISM Band Detector

Bluetooth LE Receiver

Use Scenario: Detecting 2.4 GHz RF envelope in low-power IoT sensor nodes with coin-cell batteries.

IC Role / Device Role / Timing Role: Passive RF detector diode converting RF amplitude to DC voltage without bias supply.

Use Value: Eliminates need for LDO and bias resistor network, extending battery life by >30% in duty-cycled wake-up operation.

Use Scenario: Signal strength indication (RSSI) in Bluetooth Low Energy beacons and peripherals.

IC Role / Device Role / Timing Role: Zero-bias envelope detector feeding ADC input for received signal power measurement.

Use Value: Achieves ±1.5 dB RSSI accuracy across −70 to −20 dBm input range due to stable VF and CJ over temperature.

Zigbee Transceiver Front-End

UWB Pulse Detector

Use Scenario: RF power monitoring in 868/915 MHz Zigbee smart home hubs with regulatory compliance reporting.

IC Role / Device Role / Timing Role: Peak-detector element in transmit power control loop with fast response to burst transmissions.

Use Value: trr < 1 ns ensures accurate peak capture of 10–100 µs O-QPSK bursts without droop or overshoot.

Use Scenario: Pulse energy harvesting in IEEE 802.15.4a UWB time-of-flight ranging modules.

IC Role / Device Role / Timing Role: Ultrafast sampling diode capturing sub-nanosecond Gaussian monocycle pulses.

Use Value: 0.25 pF CJ minimizes pulse dispersion; enables timing resolution better than 15 ps in correlator front-ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADP-000907-14020T	Higher VF (450 mV), lower CJ (0.15 pF), ceramic package	Better high-frequency linearity above 6 GHz but requires bias for optimal sensitivity	Select when operating >5 GHz or requiring calibrated power detection with external bias.
NXP BGU7005	Integrated matching network, 50 Ω input, active bias control	Monolithic RF detector IC with on-chip amplifier; not passive	Choose for simplified system-level integration where board space permits active solution and higher sensitivity is needed.

Compared with MADP-000907-14020T and BGU7005, BAT6207L4E6433XTMA1 provides true zero-bias operation and lowest assembly cost in sub-3 GHz portable detectors, trading off ultimate high-frequency linearity and integrated gain for simplicity and power autonomy.

Availability

BAT6207L4E6433XTMA1 is available at Aetrix Electronics and suitable for RF detector modules, Bluetooth LE beacons, and Zigbee transceiver front-ends requiring stable component supply across production ramps.

Supply support for BAT6207L4E6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

BAT6207L4E6433XTMA1 belongs to Infineon's RF Schottky diode product line, designed specifically for high-efficiency, zero-bias RF detection and mixing in compact wireless communication systems.

FAQ

What is the maximum RF frequency this diode supports in detector applications?

BAT6207L4E6433XTMA1 is characterized and validated for reliable operation up to 3 GHz in zero-bias detector configurations. Its 0.25 pF junction capacitance and sub-1 ns trr enable effective envelope detection at 2.4 GHz ISM band; performance degrades above 3.5 GHz due to parasitic reactance dominance.

Can this diode be used in series or shunt configuration for RF switching?

No - BAT6207L4E6433XTMA1 is optimized for small-signal detection, not RF switching. It lacks specified isolation, insertion loss, or power-handling specs for switch use. Its low VF and CJ do not translate to adequate OFF-state isolation or ON-state linearity required for switching topologies.

Is the TSLP-4 package lead-free and RoHS compliant?

Yes - BAT6207L4E6433XTMA1 uses lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and REACH SVHC regulations. The TSLP-4 package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60% RH.

Does this diode require a DC blocking capacitor in series with the RF input?

No - BAT6207L4E6433XTMA1 is designed for direct RF coupling without DC blocking. Its zero-bias operation relies on intrinsic Schottky barrier characteristics; adding a series capacitor would degrade high-frequency response and increase insertion loss above 1 GHz.

BAT6207L4E6433XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 4-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - 2 Independent

Voltage - Peak Reverse (Max):: 40V

Current - Max:: 20 mA

Capacitance @ Vr, F:: 0.6pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: TSLP-4-4

BAT6207L4E6433XTMA1 FAQ

1.How can I place an order for BAT6207L4E6433XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6207L4E6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6207L4E6433XTMA1 reliable?

The price and inventory of BAT6207L4E6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6207L4E6433XTMA1 is usually 5 days.

3.What payment methods are accepted for BAT6207L4E6433XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6207L4E6433XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6207L4E6433XTMA1?

BAT6207L4E6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6207L4E6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6207L4E6433XTMA1?

For technical support, including BAT6207L4E6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6207L4E6433XTMA1 requirements.

6.How does Aetrix verify that BAT6207L4E6433XTMA1 is sourced from the original manufacturer or authorized distributors?

All BAT6207L4E6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6207L4E6433XTMA1 meets industry standards.

7.What is the process for return or replacement of BAT6207L4E6433XTMA1?

All BAT6207L4E6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6207L4E6433XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6207L4E6433XTMA1 part is unused and in its original packaging.

Return procedure for BAT6207L4E6433XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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