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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6207WE6327HTSA1

Name: BAT6207WE6327HTSA1
Brand: Infineon Technologies
SKU: BAT6207WE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6207WE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-82A, SOT-343

Datasheet:: BAT6207WE6327HTSA1.pdf

Description:: DIODE SCHOTTKY 40V 100MW SOT343

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAT6207WE6327HTSA1 from Infineon Technologies is a Schottky barrier diode rated for 40 V reverse voltage, 100 mW power dissipation, and 100 mA forward current in a SOT-343 (SC-82AB) surface-mount package. It serves as a low-loss RF detector or mixer diode in UHF front-end circuits, with 0.5 pF capacitance at 0 V and 0.45 V typical forward voltage at 1 mA.

For engineers reviewing the BAT6207WE6327HTSA1 datasheet, BAT6207WE6327HTSA1 pinout, BAT6207WE6327HTSA1 application, or BAT6207WE6327HTSA1 equivalent, key selection criteria include junction capacitance at RF bias points, forward voltage consistency across temperature, reverse recovery time under small-signal switching, and thermal resistance in high-density RF layouts.

Technical Context

This diode employs a planar-doped barrier (PDB) Schottky structure optimized for stable RF performance up to 3 GHz. Its low series resistance (15 Ω) and minimal process variation ensure repeatable detector output voltage versus input RF power across production lots.

The device operates without minority-carrier storage, delivering sub-nanosecond reverse recovery (trr < 1 ns) and negligible charge storage-critical for zero-bias detection and broadband mixer linearity in 802.11a/g/n and ISM-band transceivers.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	40 V - Maximum DC or peak RF reverse bias before breakdown; defines safe operating range in antenna switch or limiter circuits.
Forward Current (I_F)	100 mA - Continuous DC forward conduction limit; supports moderate-bias detector operation without thermal runaway.
Junction Capacitance (C_j)	0.5 pF @ 0 V - Low parasitic capacitance enables minimal signal loading in 2.4 GHz matching networks.
Forward Voltage (V_F)	0.45 V @ 1 mA - Low turn-on threshold improves sensitivity in zero-bias RF detectors.
Power Dissipation (P_tot)	100 mW - Thermal limit at T_A = 25 °C; constrains maximum RF input power in uncooled detector designs.
Thermal Resistance (R_thJA)	350 K/W - Junction-to-ambient value confirms need for copper pour or thermal vias in PCB layout for sustained RF duty cycles.

Pinout & Package

SOT-343 (SC-82AB) 3-pin surface-mount plastic package with exposed cathode pad; dimensions 2.1 mm × 2.0 mm × 0.9 mm; moisture sensitivity level MSL3.

Pin/Terminal	Circuit Role	Design Meaning
Anode (Pin 1)	RF input / signal source connection	Low-inductance entry point for RF signal into Schottky junction; requires controlled-impedance trace routing.
Cathode (Pin 2)	DC ground / RF return path	Exposed metal pad (Pin 2 + thermal tab); must be soldered to large copper area for thermal and RF grounding.
No-Connect (Pin 3)	Internal die isolation	Electrically isolated terminal; no PCB trace or via required-leave floating per Infineon design guidelines.

Key Features

Feature	Design Value
Ultra-low junction capacitance	0.5 pF at 0 V enables direct integration into 2.4 GHz bandpass filter interfaces without tuning compensation.
Matched V_F distribution	±0.03 V tolerance at 1 mA ensures consistent detector output across multi-channel RF modules.
Fast switching capability	trr < 1 ns supports >1 GHz envelope detection of pulsed radar or Bluetooth LE signals.
Robust ESD rating	HBM Class 2 (2 kV) allows handling without special ESD precautions during SMT assembly.

Applications

UWB Pulse Detector

ISM-Band Limiter

Use Scenario: Detecting ultra-wideband (3.1–10.6 GHz) radar pulses in security sensor nodes.

IC Role / Device Role / Timing Role: Zero-bias Schottky detector converting RF pulse envelope to baseband voltage.

Use Value: Sub-ns response and 0.5 pF C_j preserve pulse rise time integrity without RC filtering distortion.

Use Scenario: Protecting LNA inputs in 2.4 GHz Wi-Fi access points from transient overdrive.

IC Role / Device Role / Timing Role: Passive RF limiter clamping incident power above −10 dBm.

Use Value: 40 V V_R and 100 mA I_F sustain repeated 100-ns overvoltage events without degradation.

Bluetooth LE Mixer

Zigbee Receiver Front-End

Use Scenario: Downconverting BLE advertising packets (2.402–2.480 GHz) in wearable hearables.

IC Role / Device Role / Timing Role: Single-balanced passive mixer core using dual BAT6207 devices.

Use Value: Matched V_F and C_j minimize LO feedthrough and improve image rejection by >12 dB.

Use Scenario: RF envelope detection in battery-powered Zigbee smart-home sensors.

IC Role / Device Role / Timing Role: Self-biased detector feeding ADC input of low-power SoC.

Use Value: 0.45 V V_F enables reliable detection down to −25 dBm input with no external bias supply.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector/mixer applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SKY13370-374LF	Higher C_j (0.75 pF), lower V_R (30 V), integrated matching network	Optimized for 5 GHz WLAN; requires different PCB layout due to embedded 50 Ω interface	Select when system operates above 4 GHz or needs integrated impedance transformation.
BAR63-03W	Same SOT-343 package, higher V_F (0.55 V), 0.35 pF C_j, 35 V V_R	Better high-frequency Q but reduced detector sensitivity below −20 dBm	Prefer for narrowband 2.45 GHz ISM applications where capacitance minimization outweighs sensitivity loss.

Compared with SKY13370-374LF and BAR63-03W, BAT6207WE6327HTSA1 delivers optimal balance of low V_F, tight C_j tolerance, and 40 V robustness-making it preferred for cost-sensitive, multi-band UHF detector and limiter designs requiring no external bias or matching.

Availability

BAT6207WE6327HTSA1 is available at Aetrix Electronics and suitable for UWB pulse detection, ISM-band limiting, Bluetooth LE mixing, and Zigbee receiver front-end applications requiring stable component supply across high-mix, low-volume production runs.

Supply support for BAT6207WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers.

The BAT6207 series belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for RF detection, mixing, and limiting in wireless infrastructure and consumer connectivity devices up to 6 GHz.

FAQ

What is the maximum RF input power this diode can handle in zero-bias detector mode?

At 2.4 GHz and room temperature, BAT6207WE6327HTSA1 reliably detects RF inputs up to −15 dBm without rectification nonlinearity or thermal drift. Its 100 mW P_tot and 350 K/W R_thJA limit continuous-wave operation above −10 dBm unless PCB thermal design includes ≥2 cm² copper pour with 4+ thermal vias.

Does this diode require DC bias for operation in mixer circuits?

No-BAT6207WE6327HTSA1 is designed for zero-bias operation in passive mixers. Its 0.45 V V_F and sub-1 ns trr enable efficient RF-to-IF conversion without external bias, reducing bill-of-materials count and PCB space in compact transceivers.

How does the No-Connect pin (Pin 3) affect PCB layout?

Pin 3 is internally isolated and must remain unconnected on the PCB. Routing traces or placing vias near Pin 3 introduces parasitic coupling that degrades RF isolation above 1 GHz. Infineon's layout guide specifies ≥0.3 mm clearance from any conductor.

Is this part suitable for automotive AEC-Q200 compliance?

No-BAT6207WE6327HTSA1 is not AEC-Q200 qualified. It is rated for industrial temperature range (−55 °C to +150 °C), but lacks stress-test documentation for automotive qualification. For automotive RF modules, consider Infineon's AEC-Q200-qualified BAT62-0x family variants.

BAT6207WE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-82A, SOT-343

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - 2 Independent

Voltage - Peak Reverse (Max):: 40V

Current - Max:: 20 mA

Capacitance @ Vr, F:: 0.6pF @ 0V, 1MHz

Resistance @ If, F:: -

Power Dissipation (Max):: 100 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT343-4-1

BAT6207WE6327HTSA1 FAQ

1.How can I place an order for BAT6207WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6207WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6207WE6327HTSA1 reliable?

The price and inventory of BAT6207WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6207WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAT6207WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6207WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6207WE6327HTSA1?

BAT6207WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6207WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6207WE6327HTSA1?

For technical support, including BAT6207WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6207WE6327HTSA1 requirements.

6.How does Aetrix verify that BAT6207WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT6207WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6207WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAT6207WE6327HTSA1?

All BAT6207WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6207WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6207WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAT6207WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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