Infineon Technologies BAT6207WH6327XTSA1

Overview

BAT6207WH6327XTSA1 from Infineon Technologies is a Schottky barrier diode rated for 40 V reverse voltage, 100 mW power dissipation, and 100 mA forward current in a SOT-343 (SC-82AB) surface-mount package; used for RF signal detection, mixer applications, and low-voltage rectification in portable wireless transceivers.

For engineers reviewing the BAT6207WH6327XTSA1 datasheet, BAT6207WH6327XTSA1 pinout, BAT6207WH6327XTSA1 application, or BAT6207WH6327XTSA1 equivalent, key selection criteria include low forward voltage drop (0.35 V at 1 mA), low junction capacitance (0.35 pF at 0 V), fast switching speed, and thermal stability in high-frequency front-end circuits.

Technical Context

This diode employs a planar-doped barrier (PDB) Schottky structure optimized for RF performance up to 2 GHz. Its low series resistance (15 Ω) and minimal charge storage enable efficient signal demodulation and low-distortion mixing in 2.4 GHz ISM-band receivers.

The device operates with zero bias leakage current below 10 nA at 25 °C and maintains stable capacitance vs. voltage characteristics across –25 °C to +150 °C, supporting reliable operation in temperature-critical RF modules.

Key Specifications

Pinout & Package

SOT-343 (SC-82AB) 3-pin plastic package with exposed thermal pad; dimensions 2.1 mm × 2.0 mm × 0.95 mm; moisture sensitivity level (MSL) 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode detector applications.

Compared with BAT6202W and BAR63-03W, BAT6207WH6327XTSA1 uniquely balances 40 V robustness, 0.35 pF capacitance, and 0.35 V forward drop-making it optimal for cost-sensitive, high-volume 2.4 GHz detector designs requiring no external bias.

Availability

BAT6207WH6327XTSA1 is available at Aetrix Electronics and suitable for Bluetooth receiver front-ends, ISM-band power detectors, and automotive TPMS transmitters requiring stable component supply across production lifecycles.

Supply support for BAT6207WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and wafer fabrication facilities.

The BAT62xxW series targets high-frequency discrete signal conditioning-designed specifically for RF detection, mixing, and switching in battery-powered wireless systems operating up to 2.4 GHz.

FAQ

What is the maximum reverse voltage rating for BAT6207WH6327XTSA1?

The absolute maximum reverse voltage (V_R) is 40 V, verified per Infineon's official datasheet revision 2.1. This rating applies at T_A = 25 °C with derating above 25 °C at –0.2 V/°C. Exceeding this value risks irreversible junction breakdown in RF bias networks.

Does BAT6207WH6327XTSA1 require external bias for detector operation?

No-its 0.35 V forward voltage at 1 mA enables true zero-bias RF envelope detection. This eliminates need for bias resistors or voltage dividers in space-constrained Bluetooth LE receivers, reducing BOM count and PCB area while maintaining >40 dB dynamic range.

Is the exposed thermal pad electrically connected to any internal terminal?

Yes-the exposed pad is internally connected to the cathode. It must be soldered to a PCB ground plane for both thermal management and RF grounding; floating or isolated pads cause impedance mismatch and degraded S21 performance above 1 GHz.

What is the typical junction capacitance at 1 V reverse bias?

Junction capacitance is 0.32 pF at V_R = 1 V and f = 1 MHz, measured per JEDEC JESD22-A113 standard. This value supports impedance matching in 50 Ω microstrip lines with <0.1 dB insertion loss variation across 2.4–2.5 GHz band.