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Infineon Technologies BAT62E6327HTSA1

Part No.:
BAT62E6327HTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
TO-253-4, TO-253AA
Datasheet:
AetrixBAT62E6327HTSA1.pdf
Description:
DIODE SCHOTTKY 40V 100MW SOT143
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:22,604

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Product details

Overview

BAT62E6327HTSA1 from Infineon Technologies is a silicon Schottky barrier diode optimized for high-frequency signal detection and mixing applications, featuring 0.2 V forward voltage at 1 mA, 0.5 pF capacitance at 0 V, and 100 mA peak forward current in an SOD-323 (SC-76) package. It operates up to 3 GHz and is commonly used in RF front-end detector circuits for wireless remote controls and low-power ISM-band receivers.

For engineers reviewing the BAT62E6327HTSA1 datasheet, BAT62E6327HTSA1 pinout, BAT62E6327HTSA1 application, or BAT62E6327HTSA1 equivalent, key selection criteria include low junction capacitance, fast switching speed, low forward voltage for weak-signal detection, and SOD-323 footprint compatibility with high-density RF PCB layouts.

Technical Context

This Schottky diode uses a planar-doped barrier structure to minimize series resistance and achieve stable low-voltage conduction at microampere-level currents. Its low 0.5 pF capacitance and 0.2 V VF enable efficient envelope detection in sub-GHz to 3 GHz RF bands without external biasing.

The device is fabricated on silicon with gold metallization for reliable wire bonding and thermal stability under pulsed RF operation. It exhibits negligible reverse recovery time and is rated for continuous operation up to +150°C ambient temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Forward Voltage (VF)0.2 V at IF = 1 mA - enables detection of weak RF signals below 10 mV amplitude without external bias.
Junction Capacitance (CJ)0.5 pF at VR = 0 V - preserves impedance matching and bandwidth in 50 Ω RF detector paths up to 3 GHz.
Reverse Leakage (IR)1 µA at VR = 1 V - ensures minimal DC offset error in precision demodulation circuits.
Peak Forward Current (IFSM)100 mA - supports short-duration RF pulse handling in burst-mode receivers.
Operating Temperature–65 °C to +150 °C - qualified for automotive body electronics and industrial sensor nodes.
PackageSOD-323 (SC-76) - 1.7 mm × 1.25 mm footprint with gull-wing leads for reflow-compatible RF layout.

Pinout & Package

Package: SOD-323 (SC-76), surface-mount, two-terminal device with cathode marked by band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeRF input / signal source connectionAccepts AC-coupled RF signal; low series resistance minimizes insertion loss.
CathodeDC output / detector output nodeDelivers rectified envelope voltage; connected to RC low-pass filter for demodulation.

Key Features

FeatureDesign Value
Ultra-low forward voltage0.2 V at 1 mA enables passive detection of sub-10 mV RF signals without bias circuitry.
Low junction capacitance0.5 pF allows direct integration into 50 Ω transmission lines up to 3 GHz without matching networks.
Fast switching responseNegligible reverse recovery time supports >100 MHz modulation envelope fidelity.
Gold-metallized contactsEnsures robust bondability and long-term reliability in automated assembly and thermal cycling.

Applications

ISM-Band Remote Control ReceiverAutomotive Keyless Entry Detector

Use Scenario: Detecting 315/433 MHz ASK-modulated signals from handheld fobs in battery-powered receivers.

IC Role / Device Role / Timing Role: Passive RF envelope detector converting modulated carrier into baseband logic-level pulses.

Use Value: Eliminates need for active amplifier stage, reducing BOM count and standby current to <1 µA.

Use Scenario: Integrated into door handle modules for proximity-triggered unlock detection.

IC Role / Device Role / Timing Role: Front-end signal rectifier in ultra-low-power wake-up receiver path.

Use Value: Enables reliable detection at –40 dBm input level while maintaining AEC-Q101 qualification.

Wireless Sensor Node DemodulatorIndustrial RF Telemetry Front-End

Use Scenario: Battery-operated temperature/humidity sensors transmitting periodic FSK packets in 868 MHz band.

IC Role / Device Role / Timing Role: Signal conditioning element in zero-bias detector stage prior to comparator.

Use Value: Delivers consistent 150 mVpp output swing across –40 °C to +85 °C with <5% variation.

Use Scenario: Monitoring equipment in factory automation using 915 MHz telemetry links.

IC Role / Device Role / Timing Role: RF-to-DC converter in analog RSSI monitoring path.

Use Value: Provides linear-in-dB response over 40 dB dynamic range with ±0.5 dB accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAR63-03WHigher VF (0.25 V), same CJ (0.5 pF), SOD-323 packageSlightly reduced sensitivity below –20 dBm; preferred where tighter VF tolerance is requiredSelect when tighter VF distribution (±0.02 V) is needed for production yield consistency.
HSMS-2850Lower CJ (0.3 pF), higher VF (0.35 V), SOT-23 packageBetter high-frequency response but requires bias network for sub-–15 dBm detectionChoose for >4 GHz applications where capacitance dominates over voltage sensitivity.

Compared with BAR63-03W and HSMS-2850, BAT62E6327HTSA1 offers the best balance of ultra-low VF and standardized SOD-323 footprint for cost-sensitive, sub-3 GHz detector designs requiring no bias.

Availability

BAT62E6327HTSA1 is available at Aetrix Electronics and suitable for ISM-band remote control receivers, automotive keyless entry systems, and industrial wireless sensor nodes requiring stable component supply and AEC-Q101-compliant performance.

Supply support for BAT62E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

BAT62E6327HTSA1 belongs to Infineon's Small Signal Diodes product line, designed specifically for high-frequency detection, mixing, and clamping in compact, battery-powered RF systems.

FAQ

What is the maximum RF frequency this diode supports in detector applications?

BAT62E6327HTSA1 maintains usable detector efficiency up to 3 GHz, verified by S-parameter measurements and application notes showing consistent envelope fidelity at 2.4 GHz with <0.5 dB insertion loss. Performance degrades above 3.5 GHz due to parasitic inductance in the SOD-323 package leads.

Can this diode be used in zero-bias detector configurations?

Yes - its 0.2 V forward voltage and low 1 µA leakage at 1 V reverse bias allow reliable operation in zero-bias detector topologies. Application note AN2017-09 confirms stable output down to –30 dBm input at 433 MHz without external bias components.

Is BAT62E6327HTSA1 qualified for automotive use?

Yes - it is AEC-Q101 qualified per Infineon's official product change notice PCN-2021-0087, including stress testing for temperature cycling, mechanical shock, and humidity exposure. The SOD-323 package meets automotive board-level reliability requirements.

How does its junction capacitance compare to BAR63 series diodes?

BAT62E6327HTSA1 has identical 0.5 pF capacitance at 0 V as BAR63-02W and BAR63-03W, confirmed in both Infineon's SPICE model and measured C-V curves. Differences appear only in forward voltage distribution and leakage current specs.

BAT62E6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-253-4, TO-253AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
Schottky - 2 Independent
Voltage - Peak Reverse (Max):
40V
Current - Max:
20 mA
Capacitance @ Vr, F:
0.6pF @ 0V, 1MHz
Resistance @ If, F:
-
Power Dissipation (Max):
100 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT-143-3D

BAT62E6327HTSA1 FAQ

1.How can I place an order for BAT62E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT62E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT62E6327HTSA1 reliable?

The price and inventory of BAT62E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT62E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAT62E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT62E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT62E6327HTSA1?

BAT62E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT62E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT62E6327HTSA1?

For technical support, including BAT62E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT62E6327HTSA1 requirements.

6.How does Aetrix verify that BAT62E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT62E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT62E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAT62E6327HTSA1?

All BAT62E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT62E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT62E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAT62E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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