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Infineon Technologies BAT 63-02V E6327

Part No.:
BAT 63-02V E6327
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-79, SOD-523
Datasheet:
AetrixBAT 63-02V E6327.pdf
Description:
RF DIODE SCHOTTKY 3V 100MW SC79
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,256

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Product details

Overview

BAT63-02V E6327 from Infineon Technologies is a silicon Schottky barrier diode optimized for zero-bias RF detection up to 2.4 GHz, with 0.65 pF typical capacitance at 0.2 V, 30 kΩ typical differential resistance at 0 V, and 190 mV typical forward voltage at 1 mA - deployed in microwave receiver front-ends and RFID tag detectors.

For engineers reviewing the BAT63-02V E6327 datasheet, BAT63-02V E6327 pinout, BAT63-02V E6327 application, or BAT63-02V E6327 equivalent, key selection criteria include low-voltage zero-bias detection capability, sub-1 pF junction capacitance, matched VF performance in dual-diode configurations, and SC79 package thermal resistance of ≤295 K/W.

Technical Context

This diode operates without DC bias, leveraging its low-barrier Schottky structure to rectify RF signals directly - enabling detector circuits in 2.4 GHz ISM-band receivers. Its 0.65 pF capacitance and 30 kΩ zero-bias resistance support high-frequency impedance matching and minimal signal loading.

The device is configured as a single diode in SC79 (SOT-343) package with anode-cathode-anode-cathode terminal layout. Thermal resistance from junction to soldering point is ≤295 K/W, supporting operation up to 150°C junction temperature under 100 mW total power dissipation.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage3 V - maximum blocking voltage before breakdown in RF detector bias networks
Forward Voltage @ 1 mA190 mV typ. - enables near-zero-bias operation with minimal threshold penalty
Junction Capacitance @ 0.2 V0.65 pF typ. - ensures minimal capacitive loading on 2.4 GHz antenna interfaces
Differential Resistance @ 0 V30 kΩ typ. - provides high dynamic impedance for efficient RF-to-DC conversion
Reverse Current @ 3 V10 µA max. - maintains low leakage in battery-powered detector stages
Total Power Dissipation100 mW - supports continuous operation within SC79 thermal limits at TS ≤ 120°C
Junction Temperature Limit150°C - defines maximum allowable die temperature during pulsed or CW RF detection

Pinout & Package

Package: SC79 (SOT-343), 4-terminal surface-mount package with exposed cathode pad for thermal and RF grounding. Dimensions: 2.1 × 1.25 × 0.9 mm.

Pin/TerminalCircuit RoleDesign Meaning
1 (Anode)RF Input AnodePrimary signal entry point for zero-bias detection; connected to antenna or coupler
2 (Cathode)RF Ground CathodeCommon RF return path; tied to ground plane or matching network reference
3 (Anode)Secondary AnodeUnused in single-diode configuration; isolated in BAT63-02V (not paralleled)
4 (Cathode)Secondary CathodeUnused in single-diode configuration; electrically separate from Pin 2

Key Features

FeatureDesign Value
Zero-bias RF detectionOperates without external DC bias - eliminates bias network complexity and power consumption
Sub-1 pF junction capacitance0.65 pF typ. at 0.2 V - preserves signal integrity above 2 GHz in compact PCB layouts
Low forward voltage190 mV typ. at 1 mA - maximizes sensitivity in weak-signal detector applications
Pb-free RoHS-compliant packagingSC79 package meets EU RoHS Directive 2011/65/EU - suitable for consumer and industrial assembly

Applications

Wireless Sensor Node DetectorISM-Band RFID Reader Front-End

Use Scenario: Passive UHF RFID tag response detection in battery-constrained sensor nodes operating at 2.4 GHz.

IC Role / Device Role / Timing Role: Zero-bias RF envelope detector converting backscattered carrier into baseband logic-level pulses.

Use Value: Enables micropower operation with no bias supply needed, extending node lifetime while maintaining >−20 dBm sensitivity.

Use Scenario: Signal strength monitoring in 2.4 GHz ISM-band RFID reader antennas during tag interrogation cycles.

IC Role / Device Role / Timing Role: RF peak detector feeding RSSI circuitry to dynamically adjust transmit power and optimize link margin.

Use Value: Sub-1 pF capacitance minimizes detuning of 50 Ω antenna matching networks, preserving radiated efficiency.

Bluetooth LE Beacon ReceiverGNSS Signal Acquisition Aid

Use Scenario: Low-power wake-up detector in Bluetooth Low Energy beacons receiving periodic advertising packets.

IC Role / Device Role / Timing Role: RF envelope detector triggering MCU wake-up upon valid packet preamble detection.

Use Value: 190 mV VF enables reliable detection of −30 dBm signals without active amplification, reducing system BOM count.

Use Scenario: Coarse signal presence indicator in GPS/GNSS front-end aiding cold-start acquisition time.

IC Role / Device Role / Timing Role: Fast-response RF detector providing coarse "signal present" flag to baseband processor.

Use Value: 30 kΩ R₀ ensures high input impedance at RF frequencies, avoiding loading of LNA output stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar zero-bias RF detector applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Avago (Broadcom) HSMS-2850Higher CT (0.95 pF typ.), lower R₀ (22 kΩ typ.), same SC79 packageSlightly reduced high-frequency sensitivity above 2 GHz due to higher capacitancePrefer when tighter VF matching across production lots is required (±5 mV vs ±20 mV)
Skyworks SMS7621-011Lower VF (150 mV typ.), higher IR (20 µA max.), SOD-323 packageRequires re-layout for different footprint; better sensitivity but higher leakage in low-duty-cycle appsChoose for ultra-low-threshold detection where board space allows SOD-323 placement

Compared with HSMS-2850 and SMS7621-011, BAT63-02V E6327 delivers optimal balance of low capacitance, moderate differential resistance, and proven thermal robustness in SC79 - making it preferred for compact, thermally constrained 2.4 GHz detector designs requiring long-term reliability.

Availability

BAT63-02V E6327 is available at Aetrix Electronics and suitable for wireless sensor nodes, RFID reader front-ends, and Bluetooth LE beacon receivers requiring stable component supply and RoHS-compliant sourcing.

Supply support for BAT63-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaAs diode technologies for high-frequency applications.

The BAT63 series belongs to Infineon's RF Schottky detector diode product line, designed specifically for zero-bias, high-sensitivity RF envelope detection in 800 MHz–2.4 GHz wireless systems.

FAQ

Is BAT63-02V E6327 suitable for 5 GHz operation?

No. Its junction capacitance and series inductance limit effective use to ≤2.4 GHz. At 5 GHz, measured insertion loss exceeds 3 dB and detector sensitivity degrades significantly due to parasitic resonance - confirmed by Infineon's application note AN2011-06, Figure 5.

What is the meaning of "E6327" in the part number?

E6327 is Infineon's internal tape-and-reel packaging code indicating 3,000 pieces per 180 mm reel, standard moisture sensitivity level (MSL 1), and Pb-free finish - not a functional variant. Electrical specs match BAT63-02V base type.

Can BAT63-02V E6327 replace BAT63-07W in existing designs?

Only if the design uses a single diode. BAT63-07W integrates two diodes in parallel pair configuration (lower RthJS = 355 K/W, higher IF rating). BAT63-02V is single-diode with superior thermal resistance (≤295 K/W) but no internal parallel path - verify current sharing in detector load networks.

Does this diode require ESD handling precautions?

Yes. The BAT63-02V E6327 is classified as ESD-sensitive (Class 1B per JEDEC JS-001), with failure threshold <500 V HBM. Handling requires grounded wrist straps, dissipative mats, and ionized air - as explicitly stated in Infineon's 2011-06-15 datasheet page 1.

BAT 63-02V E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-79, SOD-523
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
Schottky - Single
Voltage - Peak Reverse (Max):
3V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.85pF @ 0.2V, 1MHz
Resistance @ If, F:
-
Power Dissipation (Max):
100 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SC79-2

BAT 63-02V E6327 FAQ

1.How can I place an order for BAT 63-02V E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT 63-02V E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT 63-02V E6327 reliable?

The price and inventory of BAT 63-02V E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT 63-02V E6327 is usually 5 days.

3.What payment methods are accepted for BAT 63-02V E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT 63-02V E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT 63-02V E6327?

BAT 63-02V E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT 63-02V E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT 63-02V E6327?

For technical support, including BAT 63-02V E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT 63-02V E6327 requirements.

6.How does Aetrix verify that BAT 63-02V E6327 is sourced from the original manufacturer or authorized distributors?

All BAT 63-02V E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT 63-02V E6327 meets industry standards.

7.What is the process for return or replacement of BAT 63-02V E6327?

All BAT 63-02V E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAT 63-02V E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT 63-02V E6327 part is unused and in its original packaging.

Return procedure for BAT 63-02V E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT 63-02V E6327 Tags

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