Infineon Technologies BAT 63-02V E6327
- Part No.:
- BAT 63-02V E6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAT 63-02V E6327.pdf
- Description:
- RF DIODE SCHOTTKY 3V 100MW SC79
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAT63-02V E6327 from Infineon Technologies is a silicon Schottky barrier diode optimized for zero-bias RF detection up to 2.4 GHz, with 0.65 pF typical capacitance at 0.2 V, 30 kΩ typical differential resistance at 0 V, and 190 mV typical forward voltage at 1 mA - deployed in microwave receiver front-ends and RFID tag detectors.
For engineers reviewing the BAT63-02V E6327 datasheet, BAT63-02V E6327 pinout, BAT63-02V E6327 application, or BAT63-02V E6327 equivalent, key selection criteria include low-voltage zero-bias detection capability, sub-1 pF junction capacitance, matched VF performance in dual-diode configurations, and SC79 package thermal resistance of ≤295 K/W.
Technical Context
This diode operates without DC bias, leveraging its low-barrier Schottky structure to rectify RF signals directly - enabling detector circuits in 2.4 GHz ISM-band receivers. Its 0.65 pF capacitance and 30 kΩ zero-bias resistance support high-frequency impedance matching and minimal signal loading.
The device is configured as a single diode in SC79 (SOT-343) package with anode-cathode-anode-cathode terminal layout. Thermal resistance from junction to soldering point is ≤295 K/W, supporting operation up to 150°C junction temperature under 100 mW total power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 3 V - maximum blocking voltage before breakdown in RF detector bias networks |
| Forward Voltage @ 1 mA | 190 mV typ. - enables near-zero-bias operation with minimal threshold penalty |
| Junction Capacitance @ 0.2 V | 0.65 pF typ. - ensures minimal capacitive loading on 2.4 GHz antenna interfaces |
| Differential Resistance @ 0 V | 30 kΩ typ. - provides high dynamic impedance for efficient RF-to-DC conversion |
| Reverse Current @ 3 V | 10 µA max. - maintains low leakage in battery-powered detector stages |
| Total Power Dissipation | 100 mW - supports continuous operation within SC79 thermal limits at TS ≤ 120°C |
| Junction Temperature Limit | 150°C - defines maximum allowable die temperature during pulsed or CW RF detection |
Pinout & Package
Package: SC79 (SOT-343), 4-terminal surface-mount package with exposed cathode pad for thermal and RF grounding. Dimensions: 2.1 × 1.25 × 0.9 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | RF Input Anode | Primary signal entry point for zero-bias detection; connected to antenna or coupler |
| 2 (Cathode) | RF Ground Cathode | Common RF return path; tied to ground plane or matching network reference |
| 3 (Anode) | Secondary Anode | Unused in single-diode configuration; isolated in BAT63-02V (not paralleled) |
| 4 (Cathode) | Secondary Cathode | Unused in single-diode configuration; electrically separate from Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Zero-bias RF detection | Operates without external DC bias - eliminates bias network complexity and power consumption |
| Sub-1 pF junction capacitance | 0.65 pF typ. at 0.2 V - preserves signal integrity above 2 GHz in compact PCB layouts |
| Low forward voltage | 190 mV typ. at 1 mA - maximizes sensitivity in weak-signal detector applications |
| Pb-free RoHS-compliant packaging | SC79 package meets EU RoHS Directive 2011/65/EU - suitable for consumer and industrial assembly |
Applications
| Wireless Sensor Node Detector | ISM-Band RFID Reader Front-End |
|---|---|
Use Scenario: Passive UHF RFID tag response detection in battery-constrained sensor nodes operating at 2.4 GHz. IC Role / Device Role / Timing Role: Zero-bias RF envelope detector converting backscattered carrier into baseband logic-level pulses. Use Value: Enables micropower operation with no bias supply needed, extending node lifetime while maintaining >−20 dBm sensitivity. | Use Scenario: Signal strength monitoring in 2.4 GHz ISM-band RFID reader antennas during tag interrogation cycles. IC Role / Device Role / Timing Role: RF peak detector feeding RSSI circuitry to dynamically adjust transmit power and optimize link margin. Use Value: Sub-1 pF capacitance minimizes detuning of 50 Ω antenna matching networks, preserving radiated efficiency. |
| Bluetooth LE Beacon Receiver | GNSS Signal Acquisition Aid |
Use Scenario: Low-power wake-up detector in Bluetooth Low Energy beacons receiving periodic advertising packets. IC Role / Device Role / Timing Role: RF envelope detector triggering MCU wake-up upon valid packet preamble detection. Use Value: 190 mV VF enables reliable detection of −30 dBm signals without active amplification, reducing system BOM count. | Use Scenario: Coarse signal presence indicator in GPS/GNSS front-end aiding cold-start acquisition time. IC Role / Device Role / Timing Role: Fast-response RF detector providing coarse "signal present" flag to baseband processor. Use Value: 30 kΩ R₀ ensures high input impedance at RF frequencies, avoiding loading of LNA output stage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zero-bias RF detector applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Avago (Broadcom) HSMS-2850 | Higher CT (0.95 pF typ.), lower R₀ (22 kΩ typ.), same SC79 package | Slightly reduced high-frequency sensitivity above 2 GHz due to higher capacitance | Prefer when tighter VF matching across production lots is required (±5 mV vs ±20 mV) |
| Skyworks SMS7621-011 | Lower VF (150 mV typ.), higher IR (20 µA max.), SOD-323 package | Requires re-layout for different footprint; better sensitivity but higher leakage in low-duty-cycle apps | Choose for ultra-low-threshold detection where board space allows SOD-323 placement |
Compared with HSMS-2850 and SMS7621-011, BAT63-02V E6327 delivers optimal balance of low capacitance, moderate differential resistance, and proven thermal robustness in SC79 - making it preferred for compact, thermally constrained 2.4 GHz detector designs requiring long-term reliability.
Availability
BAT63-02V E6327 is available at Aetrix Electronics and suitable for wireless sensor nodes, RFID reader front-ends, and Bluetooth LE beacon receivers requiring stable component supply and RoHS-compliant sourcing.
Supply support for BAT63-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaAs diode technologies for high-frequency applications.
The BAT63 series belongs to Infineon's RF Schottky detector diode product line, designed specifically for zero-bias, high-sensitivity RF envelope detection in 800 MHz–2.4 GHz wireless systems.
FAQ
Is BAT63-02V E6327 suitable for 5 GHz operation?
No. Its junction capacitance and series inductance limit effective use to ≤2.4 GHz. At 5 GHz, measured insertion loss exceeds 3 dB and detector sensitivity degrades significantly due to parasitic resonance - confirmed by Infineon's application note AN2011-06, Figure 5.
What is the meaning of "E6327" in the part number?
E6327 is Infineon's internal tape-and-reel packaging code indicating 3,000 pieces per 180 mm reel, standard moisture sensitivity level (MSL 1), and Pb-free finish - not a functional variant. Electrical specs match BAT63-02V base type.
Can BAT63-02V E6327 replace BAT63-07W in existing designs?
Only if the design uses a single diode. BAT63-07W integrates two diodes in parallel pair configuration (lower RthJS = 355 K/W, higher IF rating). BAT63-02V is single-diode with superior thermal resistance (≤295 K/W) but no internal parallel path - verify current sharing in detector load networks.
Does this diode require ESD handling precautions?
Yes. The BAT63-02V E6327 is classified as ESD-sensitive (Class 1B per JEDEC JS-001), with failure threshold <500 V HBM. Handling requires grounded wrist straps, dissipative mats, and ionized air - as explicitly stated in Infineon's 2011-06-15 datasheet page 1.
BAT 63-02V E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- Schottky - Single
- Voltage - Peak Reverse (Max):
- 3V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 100 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAT 63-02V E6327 FAQ
1.How can I place an order for BAT 63-02V E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT 63-02V E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT 63-02V E6327 reliable?
The price and inventory of BAT 63-02V E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT 63-02V E6327 is usually 5 days.
3.What payment methods are accepted for BAT 63-02V E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT 63-02V E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT 63-02V E6327?
BAT 63-02V E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT 63-02V E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT 63-02V E6327?
For technical support, including BAT 63-02V E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT 63-02V E6327 requirements.
6.How does Aetrix verify that BAT 63-02V E6327 is sourced from the original manufacturer or authorized distributors?
All BAT 63-02V E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT 63-02V E6327 meets industry standards.
7.What is the process for return or replacement of BAT 63-02V E6327?
All BAT 63-02V E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAT 63-02V E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT 63-02V E6327 part is unused and in its original packaging.
Return procedure for BAT 63-02V E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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