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Infineon Technologies BAT63-07WE6327
- Part No.:
- BAT63-07WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BAT63-07WE6327.pdf
- Description:
- MIXER DIODE, LOW BARRIER
- Quantity:
- Payment:
- Shipping:
Inventory:13,185
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Product details
Overview
BAT63-07WE6327 from Infineon Technologies is a silicon Schottky barrier diode configured as a single parallel pair in SOT343 (SC79) package, rated for 3 V reverse voltage, 100 mA forward current, and 100 mW power dissipation; optimized for zero-bias RF detection up to 2.4 GHz in wireless receiver front-ends.
For engineers reviewing the BAT63-07WE6327 datasheet, BAT63-07WE6327 pinout, BAT63-07WE6327 application, or BAT63-07WE6327 equivalent, key selection criteria include low junction capacitance (0.65–0.85 pF at 0.2 V), ultra-low forward voltage (typ. 190 mV at 1 mA), differential resistance (30 kΩ at 0 V), and thermal resistance (≤355 K/W) for high-frequency detector and mixer designs.
Technical Context
This diode operates as a zero-bias detector with no DC bias required, leveraging its low-barrier Schottky structure to enable direct RF-to-DC conversion at microwave frequencies. Its 0.65 pF typ. capacitance and 30 kΩ typ. differential resistance support high impedance, low-loss signal coupling in 50 Ω systems.
The SOT343 package integrates two diodes in parallel configuration (not dual-anode/dual-cathode), delivering improved current handling and matched VF (ΔVF ≤ 20 mV) for balanced detector performance. Thermal design must account for RthJS ≤ 355 K/W and maximum junction temperature of 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 3 V - Maximum blocking voltage before breakdown; sets upper limit for RF input swing in detector applications. |
| Forward Voltage (VF) | 190 mV typ. at 1 mA - Enables operation without external bias, critical for passive zero-bias detectors. |
| Diode Capacitance (CT) | 0.65 pF typ. at VR = 0.2 V, 1 MHz - Low capacitance preserves RF bandwidth and minimizes loading on antenna/matching networks. |
| Differential Resistance (R₀) | 30 kΩ typ. at VR = 0 V, 10 kHz - High dynamic resistance improves voltage sensitivity and detection efficiency at low signal levels. |
| Thermal Resistance (RthJS) | ≤355 K/W - Limits junction temperature rise under pulsed or continuous RF power; constrains max average dissipation in PCB layout. |
| Forward Current (IF) | 100 mA - Peak continuous forward current rating; defines safe operating area for rectified output or pulse handling. |
Pinout & Package
Package: SOT343 (SC79), 4-pin surface-mount plastic package with exposed thermal pad (pin 4); dimensions 2.1 × 1.25 × 0.9 mm; RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Primary anode connection for first Schottky junction; marked with dot or bevelled edge on top view. |
| Pin 2 | Cathode 1 | Cathode of first diode; internally connected to Pin 3 (cathode of second diode) in parallel configuration. |
| Pin 3 | Cathode 2 | Shared cathode node for both diodes; forms common return path in parallel-pair topology. |
| Pin 4 | Thermal Pad / Cathode Tie | Exposed metal pad soldered to PCB ground plane; provides primary thermal conduction path and electrical connection to cathode network. |
Key Features
| Feature | Design Value |
|---|---|
| Zero-bias RF detection | Operates without external DC bias due to low barrier height; eliminates bias network complexity and leakage paths. |
| Matched forward voltage | ΔVF ≤ 20 mV between parallel diodes ensures amplitude balance in differential or dual-path detector circuits. |
| Low junction capacitance | 0.65 pF typ. enables stable operation up to 2.4 GHz with minimal phase distortion in RF sampling applications. |
| Pb-free RoHS compliance | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles and industrial environmental requirements. |
Applications
| ISM Band Detector | Bluetooth Receiver Front-End |
|---|---|
Use Scenario: Detecting 2.4 GHz RF envelope in 2.4 GHz ISM band sensor nodes with minimal external components. IC Role / Device Role / Timing Role: Zero-bias RF detector diode converting received RF power to baseband DC voltage for RSSI or wake-up triggering. Use Value: Eliminates need for bias supply and matching network, reducing BOM count and PCB area while maintaining >−30 dBm sensitivity. | Use Scenario: Signal strength monitoring in Bluetooth Class 2 receivers using integrated antenna and SAW filter. IC Role / Device Role / Timing Role: Passive detector in IF or RF path providing analog RSSI feedback to baseband controller. Use Value: 30 kΩ differential resistance and 0.65 pF capacitance ensure linear response across −40 to −10 dBm input range with <1 dB variation. |
| Wireless Remote Control Receiver | UWB Pulse Detector |
Use Scenario: Sub-GHz ASK/OOK demodulation in garage door openers and smart home remotes. IC Role / Device Role / Timing Role: Envelope detector following bandpass filter and LNA, feeding comparator or ADC. Use Value: 190 mV typ. VF enables reliable detection down to 100 µV RMS input with sub-µs response time. | Use Scenario: Pulse energy capture in 3.1–10.6 GHz UWB impulse radio receivers. IC Role / Device Role / Timing Role: Ultrafast zero-bias sampling diode capturing nanosecond-scale pulses without recovery delay. Use Value: Low CT and R₀ support >1 GHz effective bandwidth, preserving pulse shape integrity for time-of-arrival estimation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zero-bias RF detector applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13370-374LF | Higher CT (1.1 pF), lower R₀ (12 kΩ), GaAs process; requires external bias for optimal linearity. | Designed for active detector/mixer use with bias control; less suitable for true zero-bias operation. | Select when higher power handling (>200 mW) and integration with biasable switch functions are needed. |
| BAR63-02V | Same die, SOT23-3 package; single diode (not parallel pair); RthJS ≤ 295 K/W; VF matching not specified. | Limited to single-path detection; lacks inherent amplitude balancing for differential architectures. | Prefer for space-constrained single-diode applications where thermal margin is tighter and matching is non-critical. |
Compared with SKY13370-374LF and BAR63-02V, BAT63-07WE6327 uniquely combines zero-bias operation, matched parallel diodes, and ultra-low CT in a thermally optimized SOT343 package-making it optimal for compact, passive, high-frequency detector designs requiring amplitude consistency and minimal footprint.
Availability
BAT63-07WE6327 is available at Aetrix Electronics and suitable for ISM band detectors, Bluetooth receiver front-ends, wireless remote control receivers, and UWB pulse detectors requiring stable component supply across industrial and consumer production volumes.
Supply support for BAT63-07WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaN technologies.
BAT63-07WE6327 belongs to Infineon's high-frequency discrete diode product line, engineered specifically for passive RF detection, envelope tracking, and low-voltage mixing in wireless infrastructure and short-range communication systems.
FAQ
What is the maximum RF input frequency supported by BAT63-07WE6327?
The BAT63-07WE6327 is characterized for operation up to 2.4 GHz, with measured rectifier voltage vs. input voltage data provided at that frequency. Its 0.65 pF capacitance and 30 kΩ differential resistance maintain usable detection efficiency through the 2.4 GHz ISM band, though performance degrades above ~3 GHz due to parasitic limitations.
Can BAT63-07WE6327 be used in series or anti-series configuration?
No - BAT63-07WE6327 contains two Schottky diodes connected in parallel (anode-to-anode, cathode-to-cathode), not independently accessible. Pins 1 and 2 form one diode; Pins 1 and 3 form the second; Pin 4 is the shared cathode thermal pad. Series or anti-series use is electrically unsupported.
Is BAT63-07WE6327 ESD-sensitive, and what handling precautions apply?
Yes - BAT63-07WE6327 is classified as ESD-sensitive (HBM Class 1B per JEDEC JS-001). Handling requires grounded workstations, ionized air, static-dissipative packaging, and wrist straps. PCB layout must avoid floating traces near pins 1–3, and reflow must follow IPC-J-STD-020 moisture sensitivity level MSL3 profile.
How does thermal resistance differ between BAT63-07WE6327 and BAT63-02V?
BAT63-07WE6327 has RthJS ≤ 355 K/W due to its SOT343 package with exposed thermal pad (Pin 4), whereas BAT63-02V in SOT23-3 has RthJS ≤ 295 K/W. The higher value reflects greater thermal path length in SOT343, requiring more aggressive PCB copper pour under Pin 4 to achieve equivalent junction temperature rise.
BAT63-07WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- Schottky - 2 Independent
- Voltage - Peak Reverse (Max):
- 3V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 100 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT343-4
BAT63-07WE6327 FAQ
1.How can I place an order for BAT63-07WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT63-07WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT63-07WE6327 reliable?
The price and inventory of BAT63-07WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT63-07WE6327 is usually 5 days.
3.What payment methods are accepted for BAT63-07WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT63-07WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT63-07WE6327?
BAT63-07WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT63-07WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT63-07WE6327?
For technical support, including BAT63-07WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT63-07WE6327 requirements.
6.How does Aetrix verify that BAT63-07WE6327 is sourced from the original manufacturer or authorized distributors?
All BAT63-07WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT63-07WE6327 meets industry standards.
7.What is the process for return or replacement of BAT63-07WE6327?
All BAT63-07WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAT63-07WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT63-07WE6327 part is unused and in its original packaging.
Return procedure for BAT63-07WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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