Infineon Technologies BAT6307WE6327HTSA1

Overview

BAT6307WE6327HTSA1 from Infineon Technologies is a silicon Schottky diode configured as a single parallel pair in SOT343 (SC79) package, optimized for zero-bias RF detection up to 2.4 GHz with 0.65 pF typical capacitance at 0.2 V and 190 mV typical forward voltage at 1 mA - deployed in microwave receiver front-ends and RFID tag detectors.

For engineers reviewing the BAT6307WE6327HTSA1 datasheet, BAT6307WE6327HTSA1 pinout, BAT6307WE6327HTSA1 application, or BAT6307WE6327HTSA1 equivalent, key selection criteria include low junction capacitance (<0.85 pF), sub-300 mV VF at 1 mA, reverse voltage rating of 3 V, ESD sensitivity handling, and thermal resistance ≤355 K/W for high-frequency detector and mixer biasing roles.

Technical Context

This dual-diode configuration enables balanced RF detection and local oscillator (LO) injection in direct-conversion receivers. Its low barrier height yields minimal turn-on voltage and near-zero bias operation, critical for envelope detection without DC bias circuitry.

The device exhibits 30 kΩ typical differential resistance at 0 V and 10 kHz, supporting high-impedance signal sampling, while its 0.6 nH series inductance (LS) and 0.65–0.85 pF voltage-dependent capacitance define its GHz-range impedance matching behavior.

Key Specifications

Pinout & Package

SOT343 (SC79) 4-pin surface-mount package with exposed die pad; compact 2.1 × 1.25 mm footprint, 0.6 mm height, and moisture sensitivity level (MSL) 1.

Key Features

Applications

Availability

BAT6307WE6327HTSA1 is available at Aetrix Electronics and suitable for RFID tag detectors, ISM band receiver front-ends, and automotive TPMS sensors requiring stable component supply and RoHS-compliant sourcing.

Supply support for BAT6307WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BAT63 series belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for zero-bias RF detection, mixing, and switching in wireless communication systems up to 6 GHz.

FAQ

What is the maximum operating frequency for BAT6307WE6327HTSA1 in detector mode?

The device is characterized for operation up to 2.4 GHz in zero-bias detector applications, as validated by RF rectifier voltage vs. input voltage curves at 2.4 GHz in the official datasheet. Performance beyond 3 GHz is not specified due to rising capacitive reactance and series inductance effects.

Can BAT6307WE6327HTSA1 replace BAT6302V in existing designs?

Yes, but with thermal derating: BAT6307W has higher RthJS (≤355 K/W vs. ≤295 K/W for BAT6302V), limiting continuous IF to 100 mA only below TS ≤114°C. Layout must ensure adequate pad thermal coupling to maintain junction temperature ≤150°C.

Is the exposed pad electrically isolated or grounded?

The exposed pad is internally connected to the common cathode (Pin 2) and must be soldered to a PCB ground plane for both thermal conduction and electrical reference. Floating or unconnected pads cause thermal runaway and parameter shift.

What does "d 63s" marking indicate on the device body?

"d 63s" is the Infineon date and type code per CES-Code standard: "d" = April (2011 per document date), "63" = BAT63 series, "s" = SOT343 package variant. It confirms RoHS-compliant Pb-free construction and SC79 footprint compliance.