Infineon Technologies BAT6307WH6327XTSA1

Overview

BAT6307WH6327XTSA1 from Infineon Technologies is a silicon Schottky zero-bias detector diode in SOT343 (SC79) package, rated for 3 V reverse voltage, 100 mA forward current, and 100 mW power dissipation, optimized for GHz-frequency RF detection in wireless receivers and IoT sensor front-ends.

For engineers reviewing the BAT6307WH6327XTSA1 datasheet, BAT6307WH6327XTSA1 pinout, BAT6307WH6327XTSA1 application, or BAT6307WH6327XTSA1 equivalent, key selection criteria include low junction capacitance (0.65 pF typ. at 0.2 V), differential resistance (30 kΩ typ. at 0 V), forward voltage matching (≤20 mV), ESD sensitivity handling, and thermal resistance (≤355 K/W).

Technical Context

This dual-diode configuration operates without DC bias, enabling direct RF-to-DC conversion in envelope detectors and power monitors. Its low-barrier Schottky structure delivers sub-300 mV forward voltage at 1 mA and minimal series inductance (1.6 nH), critical for 2.4 GHz signal rectification performance.

The device exhibits tight VF matching (≤20 mV) across its parallel pair, ensuring balanced operation in differential or dual-path RF sensing. Thermal derating curves confirm stable operation up to 114°C case temperature, with pulse-load capability scaling inversely with pulse width per RthJS vs. tp characterization.

Key Specifications

Pinout & Package

SOT343 (SC79) 4-pin plastic surface-mount package with gull-wing leads; pin 1 marked by dot or bevelled edge; compact 2.1 × 1.25 mm footprint optimized for high-frequency layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zero-bias RF detector applications.

Compared with SKY13370-374LF and BAR63-02VH6327XTSA1, BAT6307WH6327XTSA1 uniquely combines matched dual-diode topology, sub-0.7 pF capacitance, and 30 kΩ zero-bias resistance-enabling compact, calibrated RF sensing without external matching or bias components.

Availability

BAT6307WH6327XTSA1 is available at Aetrix Electronics and suitable for WiFi 2.4 GHz receivers, BLE beacon RSSI monitoring, and Zigbee smart home sensor nodes requiring stable component supply across extended production lifecycles.

Supply support for BAT6307WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaAs diode technologies for wireless infrastructure.

BAT6307WH6327XTSA1 belongs to Infineon's BAT63 series of high-frequency Schottky detector diodes, designed specifically for zero-bias RF envelope detection in sub-6 GHz IoT, industrial telemetry, and short-range wireless systems.

FAQ

What is the maximum RF input frequency supported by BAT6307WH6327XTSA1?

The device is characterized for operation up to 2.4 GHz, with measured rectifier output verified at that frequency using 50 Ω source and 1 kΩ load. Its 0.65 pF capacitance and 1.6 nH series inductance yield an intrinsic cutoff near 3.5 GHz, supporting limited use up to 3 GHz in optimized layouts-but datasheet validation stops at 2.4 GHz.

Can BAT6307WH6327XTSA1 be used in a biased configuration?

Yes, though not optimized for it. Forward voltage remains low (≤300 mV at 1 mA), but zero-bias operation is its primary design intent. Applying bias increases leakage and degrades matching; if DC bias is required, consider BAT63-02V or dedicated biased detector diodes like HSMS-285x series instead.

How should the exposed pad (Pin 4) be handled in PCB layout?

Pin 4 is an internally connected thermal pad tied to the cathode. It must be soldered to a solid copper ground plane with ≥4 thermal vias (0.3 mm diameter) to achieve specified RthJS ≤355 K/W. Floating or unconnected pads cause thermal runaway above 50 mW and degrade RF return loss below 1 GHz.

Is BAT6307WH6327XTSA1 suitable for ESD protection?

No. It is an ESD-sensitive device (HBM Class 2, ±2 kV), not an ESD protection component. Its 3 V VR rating and low junction area make it vulnerable to transient overstress. Always use dedicated TVS diodes (e.g., ESD5Z series) upstream in RF paths where ESD immunity is required.