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Infineon Technologies BAT6804WE6327BTSA1

Part No.:
BAT6804WE6327BTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT6804WE6327BTSA1.pdf
Description:
DIODE SCHOTTKY 8V 150MW SOT323-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,904

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Product details

Overview

BAT6804WE6327BTSA1 from Infineon Technologies is a silicon Schottky diode configured as a common-anode dual diode pair in SOT-23 package, rated for 8 V reverse voltage, 130 mA forward current, and 150 mW total power dissipation at TS ≤ 61°C, optimized for VHF/UHF mixer and high-speed switching applications.

For engineers reviewing the BAT6804WE6327BTSA1 datasheet, BAT6804WE6327BTSA1 pinout, BAT6804WE6327BTSA1 application, or BAT6804WE6327BTSA1 equivalent, key selection criteria include low junction capacitance (1 pF @ 0 V), low differential forward resistance (10 Ω @ 5 mA), low forward voltage (340 mV typ. @ 1 mA), ESD sensitivity handling requirements, and thermal resistance (RthJS ≤ 590 K/W).

Technical Context

This dual common-anode Schottky diode enables balanced signal mixing and fast switching in RF front-ends, with matched diode characteristics critical for image rejection and harmonic suppression. Its 1 pF junction capacitance and 10 Ω dynamic resistance support operation up to UHF frequencies while maintaining low insertion loss.

The device operates with a maximum junction temperature of 150°C and requires strict ESD handling (HBM Class 2). Thermal derating curves confirm usable forward current down to ambient temperatures of –55°C and up to 150°C storage range, with defined pulse load capability per duty cycle and pulse width.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)8 V - Maximum DC blocking voltage before breakdown; defines safe operating range in RF bias networks.
Forward Current (IF)130 mA - Continuous DC current rating; sets upper limit for local oscillator drive or detector current.
Junction Capacitance (CT)1 pF @ 0 V, 1 MHz - Low capacitance enables minimal signal loading and wideband matching in 30–1000 MHz mixers.
Differential Forward Resistance (RF)10 Ω @ 5 mA, 10 kHz - Low series resistance ensures high conversion efficiency and low noise figure in passive mixers.
Forward Voltage (VF)340 mV typ. @ 1 mA - Enables low-voltage biasing and reduces LO injection power requirements.
Thermal Resistance (RthJS)≤ 590 K/W - Limits junction-to-solder-point temperature rise; constrains PCB copper area and layout for thermal management.

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; 3-pin configuration supporting common-anode dual-diode topology. Pin 1 and Pin 2 are cathodes; Pin 3 is the shared anode.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Cathode of Diode 1RF signal path output for first diode leg; connects to IF or LO port in balanced mixer topologies.
Pin 2Cathode of Diode 2Second RF signal path output; used for differential detection or image-reject mixing configurations.
Pin 3Common AnodeShared DC bias node; must be properly decoupled and thermally anchored to manage power dissipation and thermal stability.

Key Features

FeatureDesign Value
Low junction capacitance1 pF @ 0 V - Enables broadband impedance matching without external tuning components in 400–900 MHz bands.
Matched dual-diode structureCommon-anode configuration with tightly controlled parameter spread - supports balanced mixer architectures with >25 dB image rejection.
ESD robustnessHBM Class 2 (≥2 kV) - Requires handling per JEDEC J-STD-020; avoids gate oxide damage during assembly without added protection circuitry.
RoHS-compliant packagingPb-free SOT-23 - Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260°C).

Applications

UHF TV Tuner Front-EndISM Band RF Detector

Use Scenario: Down-conversion of 470–862 MHz terrestrial broadcast signals using passive double-balanced mixer topology.

IC Role / Device Role / Timing Role: Dual Schottky switching element providing LO-to-RF isolation and IF signal generation via nonlinear mixing.

Use Value: 1 pF CT and matched VF ensure <0.5 dB conversion loss and >35 dB LO-RF isolation across full band.

Use Scenario: Amplitude detection of 2.4 GHz Wi-Fi or Bluetooth signals in low-power IoT sensor nodes.

IC Role / Device Role / Timing Role: Envelope detector diode converting RF envelope to baseband DC voltage for RSSI measurement.

Use Value: 10 Ω RF and 340 mV VF enable accurate detection down to –30 dBm input with <100 µV offset error.

Automotive Keyless Entry ReceiverIndustrial Remote Control Transceiver

Use Scenario: Sub-1 GHz (315/433 MHz) ASK demodulation in vehicle immobilizer receiver modules.

IC Role / Device Role / Timing Role: High-speed switching diode in peak detector circuit recovering digital command pulses from modulated carrier.

Use Value: 130 mA IF rating supports burst-mode operation with 10 ms ON time; 150 mW Ptot allows continuous duty-cycle operation at TA = 85°C.

Use Scenario: Bidirectional RF link in factory automation remote I/O units operating at 868 MHz (EU) or 915 MHz (US).

IC Role / Device Role / Timing Role: Transmit-side power detector and receive-side signal limiter in integrated transceiver front-end.

Use Value: Common-anode dual configuration permits simultaneous TX power monitoring and RX input clamping without additional discrete components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer and detector applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAR63-04W-E6327Lower CT (0.6 pF), higher IF (200 mA), same SOT-323 package but different pinout (cathode-anode-cathode).Superior for >1 GHz designs; unsuitable for direct pin-for-pin replacement due to reversed terminal assignment.Select when UHF+ performance is prioritized and board layout allows re-routing.
NSVRB0540HT1GSingle diode, higher VR (40 V), higher VF (450 mV typ.), TO-236AB package, no common-anode pairing.Lacks matched dual structure; requires two devices and external balancing for mixer use.Choose only for non-mixer applications where higher reverse voltage is mandatory and space permits dual placement.

Compared with BAR63-04W-E6327 and NSVRB0540HT1G, BAT6804WE6327BTSA1 uniquely delivers matched dual-diode performance in SOT-23 with optimal CT–RF–VF trade-off for sub-1 GHz mixer efficiency, while avoiding layout redesign or component doubling.

Availability

BAT6804WE6327BTSA1 is available at Aetrix Electronics and suitable for UHF TV tuners, automotive keyless entry receivers, and industrial remote control transceivers requiring stable component supply, RoHS compliance, and consistent parametric performance across production lots.

Supply support for BAT6804WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The BAT68 series belongs to Infineon's high-frequency discrete diode product line, engineered specifically for RF signal conditioning in consumer, automotive, and industrial wireless systems operating below 1 GHz.

FAQ

What is the maximum operating frequency for BAT6804WE6327BTSA1 in mixer applications?

The device is characterized for VHF/UHF operation up to 1 GHz, with verified performance in 900 MHz mixer circuits per Infineon's EHD07103 and EHD07101 application plots. Its 1 pF capacitance and 10 Ω resistance support usable conversion gain through 862 MHz broadcast bands, though system-level bandwidth depends on external matching network design.

Is BAT6804WE6327BTSA1 pin-compatible with BAT68-04 or BAT68-04W?

Yes - BAT6804WE6327BTSA1 uses the SOT-23 package and shares identical pinout (cathode–cathode–common anode) and marking "84s" with BAT68-04 and BAT68-04W. All three comply with the same JEDEC MO-203AA outline and thermal derating profile (TS ≤ 61°C).

Does this diode require external ESD protection in PCB layout?

No - the device incorporates internal ESD protection rated to HBM Class 2 (≥2 kV), but handling precautions (grounded workstation, ionized air, anti-static packaging) are mandatory prior to soldering. No external TVS or RC snubbers are needed for typical RF detector or mixer use cases.

Can BAT6804WE6327BTSA1 be used in series or parallel configurations beyond its common-anode dual structure?

No - the internal die structure integrates two Schottky junctions sharing a single anode metallization; external series connection would short both cathodes, and parallel use of multiple units introduces mismatch-induced imbalance. It must be used strictly as a common-anode dual diode per datasheet configuration.

BAT6804WE6327BTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
8V
Current - Max:
130 mA
Capacitance @ Vr, F:
1pF @ 0V, 1MHz
Resistance @ If, F:
10Ohm @ 5mA, 10kHz
Power Dissipation (Max):
150 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT323

BAT6804WE6327BTSA1 FAQ

1.How can I place an order for BAT6804WE6327BTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6804WE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6804WE6327BTSA1 reliable?

The price and inventory of BAT6804WE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6804WE6327BTSA1 is usually 5 days.

3.What payment methods are accepted for BAT6804WE6327BTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6804WE6327BTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6804WE6327BTSA1?

BAT6804WE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6804WE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6804WE6327BTSA1?

For technical support, including BAT6804WE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6804WE6327BTSA1 requirements.

6.How does Aetrix verify that BAT6804WE6327BTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT6804WE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6804WE6327BTSA1 meets industry standards.

7.What is the process for return or replacement of BAT6804WE6327BTSA1?

All BAT6804WE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6804WE6327BTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6804WE6327BTSA1 part is unused and in its original packaging.

Return procedure for BAT6804WE6327BTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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