Infineon Technologies BAT6804WH6327XTSA1

Overview

BAT6804WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode configured as a common-anode dual diode pair in SOT-23 package, rated for 8 V reverse voltage, 130 mA forward current, and optimized for VHF/UHF mixer and high-speed switching applications in RF front-ends.

For engineers reviewing the BAT6804WH6327XTSA1 datasheet, BAT6804WH6327XTSA1 pinout, BAT6804WH6327XTSA1 application, or BAT6804WH6327XTSA1 equivalent, key selection criteria include low junction capacitance (1 pF @ 0 V), low forward voltage (340 mV @ 1 mA), differential forward resistance (10 Ω @ 5 mA), thermal resistance (590 K/W), and RoHS-compliant SOT-23 packaging.

Technical Context

This dual-diode configuration supports balanced mixer topologies and series-switching architectures where matched characteristics between anode-connected diodes are critical. Its low CT (≤1 pF) and low rf (≤10 Ω) enable efficient signal rectification and harmonic suppression above 300 MHz.

The device operates with a maximum junction temperature of 150 °C and is characterized at TA = 25 °C, with derated forward current up to 100 mA at TS = 61 °C - reflecting its thermal design boundary for continuous operation in compact RF modules.

Key Specifications

Pinout & Package

SOT-23 package (3-pin, standard outline per Infineon EHs BCW66 footprint), surface-mountable with 0.95 mm lead pitch and 1.3 mm × 2.9 mm body dimensions. Pin 1 = Anode, Pin 2 = Cathode 1, Pin 3 = Cathode 2 (common-anode dual diode configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer and switching applications.

Compared with BAR63-04W-E6327 and SKY13370-374LF, BAT6804WH6327XTSA1 offers superior high-frequency performance (≤1 pF CT) and lowest forward voltage in discrete dual-Schottky form, making it optimal for cost-sensitive, high-volume UHF mixer designs where layout simplicity and zero-bias operation are essential.

Availability

BAT6804WH6327XTSA1 is available at Aetrix Electronics and suitable for UHF TV tuners, ISM-band RF switches, and GPS L1 detectors requiring stable component supply, consistent parametric binning, and RoHS-compliant sourcing.

Supply support for BAT6804WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and GaN-based RF components.

BAT6804WH6327XTSA1 belongs to Infineon's BAT68 series of high-frequency Schottky diodes, designed specifically for VHF/UHF mixer, detector, and switching functions in wireless infrastructure and consumer RF modules.

FAQ

Is BAT6804WH6327XTSA1 suitable for zero-bias detector applications?

Yes. With typical IR < 0.1 µA at 1 V reverse bias and VF = 340 mV at 1 mA, it operates effectively as a zero-bias detector in GPS and RFID receivers. Its low CT (≤1 pF) preserves signal integrity at L1 (1575 MHz) and UHF frequencies without external bias networks.

What is the maximum RF input power this diode can handle in mixer mode?

At 900 MHz, the device supports up to +10 dBm RF input in mixer configurations when thermally anchored per SOT-23 RthJS = 590 K/W. Derating is required above 61 °C case temperature; peak pulse power must stay below 150 mW average to avoid junction overheating.

Does this part require special PCB layout considerations?

Yes. To maintain ≤1 pF effective capacitance, keep traces short (<2 mm), use ground coplanar waveguide routing, and avoid solder mask over pads. Thermal vias under the tab (Pin 1) are recommended to manage 150 mW dissipation in high-duty-cycle switching.

How does the common-anode configuration affect biasing in balanced mixer designs?

The shared anode simplifies LO injection - a single AC-coupled LO signal applied to Pin 1 drives both diodes simultaneously. Cathodes (Pins 2 & 3) deliver complementary IF outputs, enabling inherent phase balance and reduced even-harmonic distortion without external matching components.