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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAT6806WE6327HTSA1

Name: BAT6806WE6327HTSA1
Brand: Infineon Technologies
SKU: BAT6806WE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAT6806WE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAT6806WE6327HTSA1.pdf

Description:: DIODE SCHOTTKY 8V 150MW SOT323-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,843

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Product details

Overview

BAT6806WE6327HTSA1 from Infineon Technologies is a silicon Schottky diode configured as a common-anode dual diode pair in SOT-323 package, rated for 8 V reverse voltage, 130 mA forward current, and 150 mW total power dissipation at TS ≤ 61°C, optimized for VHF/UHF mixer and high-speed switching applications.

For engineers reviewing the BAT6806WE6327HTSA1 datasheet, BAT6806WE6327HTSA1 pinout, BAT6806WE6327HTSA1 application, or BAT6806WE6327HTSA1 equivalent, key selection criteria include low junction capacitance (1 pF @ 0 V), low forward voltage (340 mV @ 1 mA), differential forward resistance (10 Ω @ 5 mA), thermal resistance (RthJS ≤ 590 K/W), and RoHS-compliant SOT-323 packaging.

Technical Context

This dual-common-anode Schottky diode enables balanced RF signal mixing and fast switching by leveraging low-barrier silicon junctions with minimal stored charge. Its 1 pF zero-bias capacitance and 10 Ω dynamic resistance at 5 mA support operation up to UHF frequencies with low insertion loss and high isolation.

The device operates within a -55°C to +150°C storage range and 150°C maximum junction temperature, with thermal derating curves confirming 130 mA DC forward current capability only when solder-point temperature remains ≤61°C - critical for compact RF front-end layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (VR)	8 V - defines maximum RF signal swing before breakdown in mixer or detector circuits
Forward Current (IF)	130 mA - continuous DC current limit under thermal constraint TS ≤ 61°C
Junction Capacitance (CT)	1 pF @ 0 V, 1 MHz - enables broadband matching in 30–1000 MHz VHF/UHF mixers
Differential Forward Resistance (RF)	10 Ω @ 5 mA, 10 kHz - determines conversion loss and linearity in small-signal switching
Forward Voltage (VF)	340 mV @ 1 mA - ensures low-power biasing and minimal DC offset in active mixers
Thermal Resistance (RthJS)	≤590 K/W - constrains PCB copper area and heatsinking requirements for sustained operation

Pinout & Package

SOT-323 (SC-70) surface-mount package with three terminals: Pin 1 (Anode 1), Pin 2 (Cathode), Pin 3 (Anode 2), forming a common-cathode configuration per diode but shared cathode - i.e., common-anode dual diode topology.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Anode of Diode 1	RF input node for first diode leg in balanced mixer or dual-switch path
Pin 2	Common Cathode	Shared output/ground reference; must be low-inductance RF return path
Pin 3	Anode of Diode 2	RF input node for second diode leg; enables push-pull or image-reject configurations

Key Features

Feature	Design Value
Low junction capacitance	1 pF @ 0 V - minimizes capacitive loading on 50 Ω RF traces and preserves bandwidth
Ultra-low forward voltage	340 mV @ 1 mA - reduces local oscillator drive power and improves conversion efficiency
ESD-sensitive handling	Class H1B (≥2 kV HBM) - mandates grounded workstations and ionized air during assembly
Pb-free RoHS compliance	Lead-free terminations with matte tin plating - compatible with lead-free reflow profiles (J-STD-020)

Applications

VHF/UHF Mixer Circuits

High-Speed Switching

Use Scenario: Balanced passive mixer in 174–230 MHz TV tuners and 400–900 MHz ISM band receivers.

IC Role / Device Role / Timing Role: Dual-diode switching core performing RF-to-IF signal translation without external bias.

Use Value: 1 pF CT and 10 Ω RF enable >25 dB port-to-port isolation and <7 dB conversion loss at 450 MHz.

Use Scenario: Fast ON/OFF control of bias lines in GaAs FET amplifier stages.

IC Role / Device Role / Timing Role: Low-charge, low-VF switch enabling sub-10 ns transition between active and standby states.

Use Value: 340 mV VF and negligible minority-carrier storage allow clean gate control without tail current.

RF Detector Circuits

ESD Protection Clamping

Use Scenario: Envelope detection in 868 MHz wireless sensor node receivers.

IC Role / Device Role / Timing Role: Zero-bias demodulator converting AM-modulated RF to baseband voltage.

Use Value: Sub-400 mV turn-on threshold ensures sensitivity down to -20 dBm input power.

Use Scenario: Secondary-level ESD clamp on RF antenna input of Bluetooth LE modules.

IC Role / Device Role / Timing Role: Low-capacitance shunt path diverting ±8 kV HBM transients away from LNA inputs.

Use Value: 1 pF CT avoids detuning 2.4 GHz matching networks while clamping below 12 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer and switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAR63-03W	Single diode, SOT-323, 30 V VR, 100 mA IF, 0.65 pF CT	Higher reverse voltage but no dual configuration; requires discrete pairing	Preferred where higher breakdown margin is needed and board space allows two devices
BAT62-03W	Single diode, SOT-323, 8 V VR, 100 mA IF, 0.8 pF CT, 320 mV VF @ 1 mA	Lower capacitance and VF than BAT6806W, but lacks dual topology	Used when single-diode function suffices and lowest possible CT is critical

Compared with BAT6806WE6327HTSA1, BAR63-03W trades dual integration for higher voltage tolerance, while BAT62-03W offers lower capacitance at the cost of losing the matched dual-anode architecture essential for image-reject mixers.

Availability

BAT6806WE6327HTSA1 is available at Aetrix Electronics and suitable for VHF/UHF mixer circuits, high-speed RF switching, envelope detection, and secondary ESD protection requiring stable component supply across automotive infotainment, industrial wireless sensors, and consumer radio front-ends.

Supply support for BAT6806WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon Schottky and GaN technologies.

The BAT68 family targets RF signal conditioning - specifically mixer, detector, and switching functions in cost-sensitive, space-constrained VHF/UHF systems where low CT, low VF, and thermal robustness are decisive.

FAQ

What is the correct pin 1 identification for BAT6806WE6327HTSA1 in SOT-323?

Pin 1 is the leftmost terminal when viewing the top-marked side with the marking "86s" oriented upright and the tab (notch) at the upper-right corner. It corresponds to Anode 1; Pin 2 (center) is the common cathode; Pin 3 is Anode 2. This matches Infineon's official SOT-323 outline drawing EHS BCW66.

Can BAT6806WE6327HTSA1 be used in 2.4 GHz applications?

No - its 1 pF junction capacitance and 10 Ω dynamic resistance are characterized up to UHF (≤1 GHz); performance degrades above 1 GHz due to parasitic inductance (1.4 nH) and package limitations. For 2.4 GHz, Infineon's BAT62-04W or BAR63-02V are specified alternatives.

Is thermal derating required for continuous operation?

Yes - the 130 mA forward current rating applies only when the solder-point temperature (TS) is held ≤61°C. At higher TS, current must be linearly reduced per the IF vs. TS curve in datasheet Figure 5; at TS = 85°C, max IF drops to ~85 mA.

Does BAT6806WE6327HTSA1 require external bias for mixer operation?

No - it is designed for zero-bias (self-biased) operation in passive mixers. The low 340 mV forward voltage enables conduction with typical LO amplitudes ≥ –10 dBm, eliminating need for DC bias networks that degrade RF matching and add noise.

BAT6806WE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: Schottky - 1 Pair Common Anode

Voltage - Peak Reverse (Max):: 8V

Current - Max:: 130 mA

Capacitance @ Vr, F:: 1pF @ 0V, 1MHz

Resistance @ If, F:: 10Ohm @ 5mA, 10kHz

Power Dissipation (Max):: 150 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT323

BAT6806WE6327HTSA1 FAQ

1.How can I place an order for BAT6806WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT6806WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT6806WE6327HTSA1 reliable?

The price and inventory of BAT6806WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6806WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAT6806WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6806WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT6806WE6327HTSA1?

BAT6806WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT6806WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT6806WE6327HTSA1?

For technical support, including BAT6806WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6806WE6327HTSA1 requirements.

6.How does Aetrix verify that BAT6806WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAT6806WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6806WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAT6806WE6327HTSA1?

All BAT6806WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6806WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT6806WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAT6806WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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