Infineon Technologies BAT 68-07W E6327

Overview

BAT68-07W E6327 from Infineon Technologies is a silicon Schottky diode configured as a common-anode dual diode pair in SOT343 package, rated for 8 V reverse voltage, 130 mA forward current, and optimized for VHF/UHF mixer and high-speed switching applications with 1 pF capacitance at 0 V and 10 Ω differential forward resistance at 5 mA.

For engineers reviewing the BAT68-07W E6327 datasheet, BAT68-07W E6327 pinout, BAT68-07W E6327 application, or BAT68-07W E6327 equivalent, key selection criteria include its common-anode dual-diode topology, low junction-to-soldering-point thermal resistance (410 K/W), RF-specific AC characteristics, and RoHS-compliant SOT343 packaging for compact high-frequency layouts.

Technical Context

This dual-diode device integrates two Schottky junctions sharing a common anode terminal, enabling balanced signal routing in mixer topologies and dual-path switching. Its 1 pF zero-bias capacitance and 10 Ω dynamic resistance at 5 mA support stable impedance matching up to UHF frequencies.

The SOT343 package provides three terminals - Anode (Pin 1), Cathode 1 (Pin 2), Cathode 2 (Pin 4) - with Pin 3 internally connected to the common anode leadframe, delivering low-inductance interconnects critical for RF performance below 1 GHz.

Key Specifications

Pinout & Package

SOT343 is a 4-pin, 3-terminal plastic package with Pin 3 internally tied to the common anode leadframe; the physical layout enables direct RF ground connection via the exposed pad and minimizes parasitic inductance in high-frequency signal paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer and switching applications.

Compared with BAR63-03W E6433 and SKY13370-374LF, BAT68-07W E6327 uniquely delivers passive dual-diode symmetry, ultra-low capacitance, and zero-bias operation-critical for cost-sensitive, supply-free RF front ends where layout area and thermal load are constrained.

Availability

BAT68-07W E6327 is available at Aetrix Electronics and suitable for UHF TV tuners, ISM band transceivers, automotive RKE receivers, and low-power RFID readers requiring stable component supply across industrial and consumer production cycles.

Supply support for BAT68-07W E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and high-frequency discrete components.

The BAT68 series belongs to Infineon's RF Schottky diode product line, engineered specifically for VHF/UHF signal mixing, detection, and switching in battery-powered and space-constrained wireless systems.

FAQ

What is the maximum operating frequency for BAT68-07W E6327 in mixer applications?

The BAT68-07W E6327 is characterized for reliable operation up to 900 MHz, with measured RF performance including 1 pF capacitance and 10 Ω dynamic resistance supporting effective mixing in UHF TV tuner and ISM band applications. Above 1 GHz, parasitic effects increase significantly, limiting practical use to sub-1 GHz designs.

How is the common-anode configuration implemented in the SOT343 package?

In the BAT68-07W E6327, Pins 1 and 3 are electrically connected to the common anode inside the package; Pin 1 serves as the primary anode terminal, while Pin 3 is the exposed thermal pad tied to the same node. This internal connection eliminates need for external wiring and reduces loop inductance in RF paths.

Does BAT68-07W E6327 require external bias for envelope detection?

No external bias is required: the BAT68-07W E6327 operates as a zero-bias detector due to its low forward voltage (340 mV typ. at 1 mA) and low dynamic resistance. It reliably rectifies weak RF signals down to −30 dBm in automotive RKE and RFID applications without supplemental DC supply.

Can BAT68-07W E6327 replace BAT68-06W in existing designs?

No direct replacement: BAT68-07W uses SOT343 with common-anode dual-diode configuration, whereas BAT68-06W is SOT323 with series-connected diodes. Pin count, terminal mapping, and circuit topology differ fundamentally-layout and schematic changes are required for substitution.