Infineon Technologies BAT 68-08S E6327

Overview

BAT68-08S E6327 from Infineon Technologies is a silicon Schottky diode configured as a parallel triple in SOT-363 package, rated for 8 V reverse voltage, 130 mA forward current, and 150 mW power dissipation at TS ≤ 92°C, optimized for VHF/UHF mixer and high-speed switching applications.

For engineers reviewing the BAT68-08S E6327 datasheet, BAT68-08S E6327 pinout, BAT68-08S E6327 application, or BAT68-08S E6327 equivalent, key selection criteria include low junction capacitance (1 pF @ 0 V), low differential forward resistance (10 Ω @ 5 mA), and thermal resistance (RthJS ≤ 390 K/W) for RF signal path integrity and thermal reliability in compact layouts.

Technical Context

The BAT68-08S integrates three Schottky diodes in parallel configuration to reduce effective series resistance and improve RF power handling while maintaining low capacitance. Its 1 pF junction capacitance at 0 V and 10 Ω differential forward resistance at 5 mA enable high-frequency rectification and mixing up to UHF bands.

Designed for surface-mount operation in SOT-363, it supports thermal management via low RthJS (≤390 K/W) and operates across –55°C to +150°C storage temperature range, with maximum junction temperature of 150°C and reverse leakage <0.1 µA at 1 V and 25°C.

Key Specifications

Pinout & Package

SOT-363 (SC-88) 6-pin plastic package with exposed thermal pad; compact footprint (2.13 × 1.3 mm) suitable for high-density RF PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode mixer and detector applications.

Compared with HSMS-2850 and BAP64-03W, BAT68-08S E6327 uniquely delivers parallel triple conduction with 1 pF CT and ≤390 K/W RthJS-enabling higher RF current handling and better thermal stability in compact UHF front-ends without sacrificing capacitance-limited bandwidth.

Availability

BAT68-08S E6327 is available at Aetrix Electronics and suitable for UHF TV tuners, ISM band receivers, portable GPS detectors, and Bluetooth LE power monitors requiring stable component supply and RoHS-compliant sourcing.

Supply support for BAT68-08S E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BAT68 series belongs to Infineon's high-frequency discrete Schottky diode product line, engineered specifically for RF mixing, detection, and switching in VHF/UHF wireless infrastructure and consumer radio systems.

FAQ

What is the maximum operating frequency for BAT68-08S E6327 in mixer applications?

The BAT68-08S E6327 is characterized for use up to 900 MHz, with verified performance in UHF TV tuner front-ends (470–862 MHz) and ISM band receivers. Its 1 pF junction capacitance and 10 Ω differential resistance support stable conversion loss and isolation through 1 GHz, though optimal linearity occurs below 800 MHz per application note AN2011-06.

Can BAT68-08S E6327 be used in place of BAT68-07W in a common-anode dual configuration?

No - BAT68-08S is a parallel triple configuration (three anodes tied together, three cathodes tied together), whereas BAT68-07W is a common-anode dual (two anodes joined, shared cathode). Pinout, internal topology, and thermal profile differ; direct substitution would require PCB and schematic revision.

Is the SOT-363 package of BAT68-08S E6327 lead-free and RoHS compliant?

Yes - the BAT68-08S E6327 uses a Pb-free matte tin finish on leads and complies fully with EU RoHS Directive 2011/65/EU. The "E6327" suffix denotes tape-and-reel packaging with RoHS-compliant materials and processing, confirmed in Infineon's material declaration document INF-09-0012.

How does the parallel triple structure affect thermal performance compared to single-diode variants?

The parallel triple design spreads power dissipation across three die, reducing localized junction temperature rise. With RthJS ≤390 K/W (vs. 490 K/W for BAT68 in SOT-23), it sustains 130 mA at TS ≤92°C - enabling 25% higher continuous current in same board area versus single-die equivalents without exceeding thermal limits.