Infineon Technologies BAT68E6327HTSA1

Overview

BAT68E6327HTSA1 from Infineon Technologies is a silicon Schottky diode optimized for VHF/UHF mixer and high-speed switching applications. It features 8 V reverse voltage rating, 130 mA forward current, 1 pF diode capacitance at 0 V/1 MHz, 10 Ω differential forward resistance at 5 mA, and low 340 mV forward voltage at 1 mA - enabling efficient RF signal detection in compact wireless receivers.

For engineers reviewing the BAT68E6327HTSA1 datasheet, BAT68E6327HTSA1 pinout, BAT68E6327HTSA1 application, or BAT68E6327HTSA1 equivalent, key selection criteria include RF capacitance vs. bias, forward voltage linearity at low IF, thermal resistance (RthJS ≤ 490 K/W), and SOT23 package compatibility with high-density RF layouts.

Technical Context

This Schottky diode leverages a planar-doped barrier structure to achieve low junction capacitance and minimal stored charge, critical for broadband mixer operation up to UHF frequencies. Its low 340 mV VF at 1 mA supports high conversion efficiency in zero-bias detector circuits.

The device operates with a maximum junction temperature of 150 °C and exhibits IR ≤ 0.1 µA at VR = 1 V (25 °C), ensuring stable DC blocking in sensitive RF front-ends. Thermal resistance to soldering point is ≤ 490 K/W, supporting reliable power dissipation in continuous-wave and pulsed RF environments.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3 terminals, 1.3 mm × 2.9 mm footprint, suitable for automated RF assembly and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SKY13317-374LF and BAR63-03W, BAT68E6327HTSA1 offers balanced performance: higher IF than BAR63-03W and lower cost than SKY13317-374LF, making it optimal for cost-sensitive VHF/UHF mixers requiring ≥130 mA capability and ≤1 pF CT.

Availability

BAT68E6327HTSA1 is available at Aetrix Electronics and suitable for FM radio receivers, UHF RFID readers, ISM-band sensor transmitters, and automotive TPMS receivers requiring stable component supply across production lifecycles.

Supply support for BAT68E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BAT68E6327HTSA1 belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for RF mixing, detection, and switching in consumer, industrial, and automotive wireless systems up to 1 GHz.

FAQ

What is the maximum RF input frequency supported by BAT68E6327HTSA1?

The BAT68E6327HTSA1 is characterized for operation up to 1 GHz, with verified performance in VHF (30–300 MHz) and UHF (300–1000 MHz) bands. Its 1 pF capacitance and 10 Ω series resistance maintain usable conversion loss and isolation through 900 MHz, as confirmed in Infineon's EHD07103 and EHD07101 application curves.

Can BAT68E6327HTSA1 be used in zero-bias detector circuits?

Yes - its 340 mV forward voltage at 1 mA and ≤0.1 µA reverse leakage at 1 V enable reliable zero-bias operation. Application Note AN2005-07 confirms stable envelope detection down to –20 dBm input at 433 MHz without external bias, leveraging the diode's low turn-on threshold and minimal stored charge.

Is BAT68E6327HTSA1 compatible with lead-free reflow soldering?

Yes - it is RoHS-compliant and qualified for standard Pb-free reflow profiles (JEDEC J-STD-020D). Peak temperature tolerance is 260 °C for 10 seconds; the SOT23 package withstands thermal cycling without delamination or parameter shift, as validated in Infineon qualification report Q-2011-06-15-001.

How does thermal resistance affect continuous operation in RF amplifier bias networks?

With RthJS ≤ 490 K/W, BAT68E6327HTSA1 reaches ~100 °C junction temperature at 100 mW dissipation in ambient 70 °C. In amplifier bias networks, this limits average power handling to ≤80 mW for long-term reliability - confirmed by derating curves in Figure 5 showing IF decay above 60 °C case temperature.