NXP Semiconductors BB141,115

Overview

BB141,115 from NXP Semiconductors (formerly Philips) is a low-voltage variable capacitance diode (varactor) fabricated in planar technology and housed in an SOD523 (SC-79) ultra-small surface-mount package. It delivers C_d = 4.2 pF at V_R = 1 V, C_d = 2.38 pF at V_R = 4 V, capacitance ratio of 1.76, series resistance r_s = 0.4 Ω at 470 MHz, and operates up to 150 °C - optimized for voltage-controlled oscillator tuning in compact RF modules.

For engineers reviewing the BB141,115 datasheet, BB141,115 pinout, BB141,115 application, or BB141,115 equivalent, key selection criteria include reverse voltage range (0–6 V), capacitance linearity across bias, low series resistance for Q-factor preservation, thermal stability of capacitance, and SOD523 footprint compatibility with high-density PCB layouts.

Technical Context

The BB141,115 functions as a voltage-dependent capacitor where junction capacitance varies inversely with applied reverse bias - enabling precise electronic frequency control without mechanical adjustment. Its planar silicon structure ensures repeatable C-V characteristics and stable temperature coefficient behavior.

Designed for low-voltage operation (V_R ≤ 6 V), it avoids avalanche breakdown while maintaining usable capacitance swing (ΔC ≈ 1.8 pF) between 1 V and 4 V. The 0.4 Ω series resistance at 470 MHz directly supports high-Q resonator designs in VHF/UHF oscillator tanks.

Key Specifications

Pinout & Package

Encapsulated in the SOD523 (SC-79) ultra-small plastic SMD package (1.2 mm × 0.8 mm × 0.6 mm), with cathode identified by a molded bar on the package top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BB141,115, BBY52,115 offers greater capacitance but reduced Q and linearity, while SMV1232-011 trades SOD523 size for higher voltage tolerance - making BB141,115 optimal for space-constrained, low-voltage, high-Q VCOs below 1 GHz.

Availability

BB141,115 is available at Aetrix Electronics and suitable for voltage-controlled oscillators, RF front-end tuning modules, and wireless sensor timing circuits requiring stable component supply, long-term manufacturability, and consistent C-V performance across temperature.

Supply support for BB141,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and RF components for automotive, industrial, and communication systems - with heritage from Philips Semiconductors' discrete portfolio.

The BB141,115 belongs to NXP's legacy varactor diode family designed specifically for precision voltage-controlled frequency generation in compact, battery-powered RF systems - emphasizing low-voltage operation, thermal stability, and SMD manufacturability.

FAQ

What is the maximum reverse voltage rating for BB141,115?

The BB141,115 has a continuous reverse voltage rating of 6 V and a peak reverse voltage rating of 8 V when used with a 10 kΩ series resistor. Exceeding 6 V continuously risks irreversible junction degradation. This limit is defined in the Absolute Maximum Ratings table of the original Philips preliminary specification dated May 1999, and remains valid for all BB141,115 units in circulation.

Does BB141,115 have a specified temperature coefficient of capacitance?

Yes - the BB141,115 exhibits a typical temperature coefficient of capacitance (TCd) ranging from −100 ppm/°C to −300 ppm/°C depending on reverse voltage, as shown in Figure 4 of the datasheet. At V_R = 1 V, TCd is approximately −220 ppm/°C, enabling predictable drift compensation in oscillator designs targeting <±50 ppm total error.

Is BB141,115 suitable for 2.4 GHz Bluetooth applications?

The BB141,115 is characterized up to 470 MHz for series resistance and capacitance, with no guaranteed performance above that frequency. While some designers use it in 2.4 GHz matching networks, its 0.4 Ω r_s is measured at 470 MHz - actual loss increases significantly at 2.4 GHz, reducing effective Q. For 2.4 GHz, NXP recommends newer varactors like the BBY58 series with verified 2.4 GHz C-V data.

What does the marking code 'H' indicate on BB141,115?

The marking code 'H' laser-etched on the BB141,115 package identifies the device variant and confirms compliance with the SOD523 outline per Philips specification M3D319. It appears adjacent to the cathode bar and is used for traceability and lot identification - not to be confused with polarity, which is indicated solely by the cathode bar per Figure 1.

Can BB141,115 replace BB142 in existing designs?

No - BB141,115 and BB142 are distinct variants: BB142 has C_d = 5.2 pF @ 1 V and a capacitance ratio of 1.85, with different doping profiles. Substituting BB141,115 for BB142 shifts oscillator center frequency and reduces tuning range by ~20%. Board-level validation is required, and NXP does not list them as interchangeable in any cross-reference document.