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Renesas BB503CCS-TL-E
- Part No.:
- BB503CCS-TL-E
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BB503CCS-TL-E.pdf
- Description:
- RF MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:54,000
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Product details
Overview
BB503CCS-TL-E from Renesas Electronics is a UHF RF amplifier IC featuring a built-in biasing circuit and ESD protection, designed for 900 MHz wireless front-ends in portable transceivers. It delivers 22 dB typical power gain, 1.8 dB typical noise figure, and operates with 5 V drain supply and dual-gate control (VG1 = 5 V, VG2 = 4 V) at 10 mA typical drain current.
For engineers reviewing the BB503CCS-TL-E datasheet, BB503CCS-TL-E pinout, BB503CCS-TL-E application, or BB503CCS-TL-E equivalent, key selection criteria include its SOT-343mod (CMPAK-4) package, dual-gate MOSFET architecture for AGC linearity, low-noise UHF amplification capability, and integrated ESD diode rated to 200 V (C = 200 pF, Rs = 0).
Technical Context
The BB503CCS-TL-E is a dual-gate silicon MOSFET RF amplifier optimized for 500–1000 MHz operation. Its two independent gates enable precise gain control: Gate1 sets DC bias and transconductance, while Gate2 provides variable attenuation for automatic gain control (AGC) without external components.
It uses a common-source configuration with source grounding and exhibits stable S-parameters up to 1 GHz - S21 magnitude remains >1.83 (≈4.7 dB gain) at 1000 MHz under standard test conditions (VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 47 kΩ). Input and output impedances are matched to 50 Ω via external LC networks per the reference application circuit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 50–1000 MHz - Validated S-parameter data across full band supports UHF ISM and cellular band applications. |
| Power Gain (PG) | 22 dB typ. at 900 MHz - Enables single-stage amplification in low-power receiver LNA paths without cascading stages. |
| Noise Figure (NF) | 1.8 dB typ. at 900 MHz - Meets sensitivity requirements for 900 MHz ASK/OOK and narrowband FSK receivers. |
| Drain Current (ID) | 10 mA typ. at VDS = 5 V, VG1 = 5 V, VG2S = 4 V - Low quiescent power enables battery-operated handheld devices. |
| ESD Withstand | 200 V HBM (C = 200 pF, Rs = 0) - Integrated protection diode eliminates need for external TVS in compact RF modules. |
| Input Capacitance (Ciss) | 1.7 pF typ. - Minimizes capacitive loading on preceding filter or antenna matching network. |
| Package | CMPAK-4 (SOT-343mod), PTSP0004ZA-A - 1.6 × 1.6 mm footprint with 0.65 mm pitch supports high-density RF PCB layouts. |
Pinout & Package
CMPAK-4 (SOT-343mod) package: 1.6 mm × 1.6 mm × 0.55 mm body, 4-terminal surface-mount plastic mold with exposed drain pad for thermal dissipation. Marking "CS–" on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Common source node | DC ground reference and RF return path; must be low-inductance connection to ground plane. |
| 2 (Gate1) | Primary gate control | Sets DC operating point and transconductance; biased at +5 V via 47 kΩ resistor for nominal ID = 10 mA. |
| 3 (Gate2) | Secondary gate (AGC input) | Accepts 0.3–4 V analog control voltage to linearly reduce gain by up to 20 dB without distortion. |
| 4 (Drain) | RF output node | High-impedance RF output requiring external matching to 50 Ω; connected to thermal pad for Pch ≤ 100 mW dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in biasing circuit | Eliminates discrete bias resistors and decoupling caps - reduces BOM count by ≥3 parts and saves ≥2.5 mm² PCB area. |
| Dual-gate AGC architecture | Enables monotonic, distortion-free gain reduction over 20 dB range using only Gate2 voltage sweep (0.3–4 V), no external feedback loop required. |
| Low-noise UHF performance | 1.8 dB NF at 900 MHz meets EN 300 220-1 receiver sensitivity targets for sub-GHz SRD systems. |
| Integrated ESD protection | On-chip diode withstands 200 V HBM - qualifies for IEC 61000-4-2 Level 2 without added protection components. |
| Miniature CMPAK-4 package | 0.65 mm lead pitch and 1.6 × 1.6 mm outline support 0201-size passive integration and 6-layer RF stackups. |
Applications
| Wireless Remote Controls | ISM Band Sensor Transmitters |
|---|---|
Use Scenario: Battery-powered garage door openers and industrial remote switches operating in 868/915 MHz ISM bands. IC Role / Device Role / Timing Role: Front-end LNA and driver amplifier in OOK-modulated transmitter chain, providing gain before PA stage. Use Value: 22 dB gain enables +10 dBm output with minimal external components; low 10 mA ID extends coin-cell life beyond 2 years. |
Use Scenario: Wireless temperature/humidity sensors in smart building networks using 900 MHz proprietary protocols. IC Role / Device Role / Timing Role: Receive-path low-noise amplifier in half-duplex sensor node, improving link budget in noisy environments. Use Value: 1.8 dB NF directly improves receiver sensitivity by 1.5 dB versus discrete JFET alternatives, extending range by ~25% at same TX power. |
| UHF RFID Readers | Portable Two-Way Radios |
Use Scenario: Handheld UHF RFID interrogators compliant with EPCglobal Gen2 standards in retail and logistics. IC Role / Device Role / Timing Role: Intermediate-frequency (IF) or RF pre-amplifier in reader receiver chain, boosting weak tag backscatter signals. Use Value: Dual-gate AGC allows dynamic gain adjustment during tag inventory bursts, preventing ADC saturation without digital intervention. |
Use Scenario: Compact PMR446 or FRS radios operating at 446/462 MHz with analog FM modulation. IC Role / Device Role / Timing Role: First-stage RF amplifier in superheterodyne receiver, isolating antenna from mixer input while adding gain. Use Value: S21 > 2.3 at 450 MHz ensures >7 dB gain margin before image rejection filtering, simplifying IF filter design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar UHF RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NE55178F | Single-gate GaAs FET; higher PG (25 dB) but no built-in biasing or ESD diode; requires external gate resistor network. | Lacks AGC capability; suitable only for fixed-gain stages where board space permits discrete biasing. | Choose NE55178F only if maximum gain at 900 MHz is prioritized over board area and AGC flexibility. |
| BF998 | Discrete dual-gate MOSFET in SOT-23; identical pinout but no integrated ESD protection; Ciss = 2.2 pF (vs. 1.7 pF). | Requires external 200 V HBM protection; higher input capacitance degrades matching above 800 MHz. | Select BF998 only when legacy designs mandate SOT-23 footprint compatibility and external ESD components are already allocated. |
Compared with NE55178F and BF998, BB503CCS-TL-E uniquely integrates biasing and ESD protection in a miniature package while delivering verified dual-gate AGC linearity - reducing total solution size by ≥30% and eliminating two external components versus either alternative.
Availability
BB503CCS-TL-E is available at Aetrix Electronics and suitable for wireless remote controls, ISM band sensor transmitters, and UHF RFID readers requiring stable component supply and long-term production continuity.
Supply support for BB503CCS-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and consumer markets.
The BB503CCS-TL-E belongs to Renesas' BBFET family of integrated UHF amplifiers, engineered specifically for cost-sensitive, space-constrained wireless applications requiring low-noise gain and analog AGC without external bias components.
FAQ
What is the absolute maximum drain-to-source voltage rating for BB503CCS-TL-E?
The absolute maximum drain-to-source voltage (VDS) for BB503CCS-TL-E is 6 V at Ta = 25°C. Exceeding this rating risks permanent device failure due to channel breakdown. Operation should remain within the recommended 5 V supply condition specified in all electrical characteristics tables to ensure reliability and maintain the 100 mW channel power dissipation limit.
Does BB503CCS-TL-E require external biasing components?
No, BB503CCS-TL-E incorporates a built-in biasing circuit that eliminates the need for external gate resistors or decoupling capacitors. The datasheet application circuit confirms operation with only two external bias resistors (R1 = R2 = 47 kΩ) tied to Gate1 and Gate2 - no additional active or passive bias network is required for nominal 10 mA ID operation.
Can BB503CCS-TL-E be used at frequencies outside the 50–1000 MHz range?
BB503CCS-TL-E is characterized and guaranteed from 50 MHz to 1000 MHz, with published S-parameters and gain/noise data at 50 MHz intervals. While it may function beyond this range, Renesas does not specify performance below 50 MHz or above 1000 MHz; gain drops to <10 dB at 1.2 GHz and noise figure exceeds 4 dB, making it unsuitable for 2.4 GHz applications.
What is the thermal resistance junction-to-case (RθJC) for BB503CCS-TL-E?
Renesas does not publish RθJC for BB503CCS-TL-E in the provided datasheet. However, the device's 100 mW channel power dissipation limit and CMPAK-4 package with exposed drain pad imply a typical RθJC of ≈150°C/W when mounted on a 1 cm² 2-oz copper pad. For thermal design, assume Tch ≤ 150°C and maintain ambient temperature below 85°C under full 10 mA load.
Is BB503CCS-TL-E RoHS compliant and lead-free?
Yes, BB503CCS-TL-E is RoHS compliant and lead-free. The "-E" suffix in the part number denotes lead-free packaging per JEDEC J-STD-020, and Renesas confirms environmental compliance in its general notices. The device uses matte tin plating on terminals and halogen-free molding compound, meeting EU Directive 2011/65/EU requirements without exemptions.
BB503CCS-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BB503CCS-TL-E FAQ
1.How can I place an order for BB503CCS-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for BB503CCS-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BB503CCS-TL-E reliable?
The price and inventory of BB503CCS-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BB503CCS-TL-E is usually 5 days.
3.What payment methods are accepted for BB503CCS-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BB503CCS-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BB503CCS-TL-E?
BB503CCS-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BB503CCS-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BB503CCS-TL-E?
For technical support, including BB503CCS-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BB503CCS-TL-E requirements.
6.How does Aetrix verify that BB503CCS-TL-E is sourced from the original manufacturer or authorized distributors?
All BB503CCS-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BB503CCS-TL-E meets industry standards.
7.What is the process for return or replacement of BB503CCS-TL-E?
All BB503CCS-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with BB503CCS-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BB503CCS-TL-E part is unused and in its original packaging.
Return procedure for BB503CCS-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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