Renesas BB504CDS-TL-H

Overview

BB504CDS-TL-H from Renesas Electronics is a built-in biasing circuit MOS FET IC designed as a VHF/UHF RF amplifier for 200 MHz and 900 MHz bands. It delivers 30 dB typical power gain and 1.0 dB typical noise figure at 200 MHz, with ESD protection up to 200 V (C = 200 pF, Rs = 0), housed in a CMPAK-4 (SOT-343mod) surface-mount package.

For engineers reviewing the BB504CDS-TL-H datasheet, BB504CDS-TL-H pinout, BB504CDS-TL-H application, or BB504CDS-TL-H equivalent, this device is selected for low-noise, high-gain RF front-end stages in portable radios, UHF wireless microphones, and ISM-band transceivers where board space and external bias components must be minimized.

Technical Context

The BB504CDS-TL-H integrates dual-gate MOSFET architecture with independent gate control: Gate1 sets operating current (ID = 16 mA typ. at VG1 = 5 V, VG2S = 4 V), while Gate2 enables gain tuning via variable bias (VG2S = 0.6–1.1 V cutoff range). Its 2.1 pF typical input capacitance and 0.027 pF reverse transfer capacitance support stable 200–900 MHz operation with minimal feedback.

This IC operates with fixed 5 V drain-source voltage and uses an external 120 kΩ gate resistor for DC biasing. Its S-parameters confirm broadband matching: S21 magnitude remains >2.1 (≈6.4 dB) from 50–1000 MHz, and S11 stays below –15 dB across 200–900 MHz, enabling direct 50 Ω system integration without external matching networks.

Key Specifications

Pinout & Package

CMPAK-4 (SOT-343mod) is a 4-pin, leadless surface-mount package with exposed drain pad for thermal dissipation. Dimensions: 2.0 mm × 1.25 mm × 0.65 mm (L × W × H); mass: 0.006 g. Marking "DS–" identifies the BB504CDS-TL-H variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar VHF/UHF RF amplifier applications.

Compared with NE5517M and BF998, BB504CDS-TL-H provides superior noise performance at 200 MHz, eliminates external bias components, and integrates ESD protection-reducing total solution size by 40% and design validation effort for portable RF products.

Availability

BB504CDS-TL-H is available at Aetrix Electronics and suitable for portable FM radio receivers, UHF wireless microphones, and ISM-band telemetry transceivers requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for BB504CDS-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power solutions for automotive, industrial, and communications markets.

BB504CDS-TL-H belongs to Renesas' BBFET family of integrated RF MOSFETs, engineered specifically for miniaturized VHF/UHF amplifier stages in cost-sensitive, space-constrained wireless equipment.

FAQ

What is the maximum operating frequency range supported by BB504CDS-TL-H?

The BB504CDS-TL-H is characterized for operation from 50 MHz to 1000 MHz, with verified performance metrics at 200 MHz and 900 MHz. S-parameter data confirms usable gain (S21 > 2.1) and input match (S11 < –15 dB) across this full band, making BB504CDS-TL-H suitable for multi-band VHF/UHF designs including FM radio, wireless mics, and ISM applications.

Does BB504CDS-TL-H require external biasing components?

No, BB504CDS-TL-H integrates a built-in biasing circuit that eliminates the need for external gate resistors or voltage dividers. Only a single 120 kΩ resistor connected to Gate1 is required to establish the 16 mA typical drain current; Gate2 is biased directly, and no source degeneration or drain choke is mandatory for basic operation.

How does the dual-gate structure of BB504CDS-TL-H improve RF system design?

The dual-gate structure of BB504CDS-TL-H separates DC bias control (Gate1) from RF gain modulation (Gate2), enabling real-time AGC without disrupting quiescent current. This allows BB504CDS-TL-H to maintain constant noise figure and linearity while adapting to varying input signal levels-critical for robust reception in fading environments like portable radios and telemetry links.

What thermal considerations apply to BB504CDS-TL-H in continuous operation?

BB504CDS-TL-H has a maximum channel power dissipation of 100 mW and channel temperature limit of 150°C. At its typical 16 mA ID and 5 V VDS, it dissipates 80 mW; proper PCB copper pour under the exposed drain pad is essential. Derating begins above 50°C ambient, with maximum usable power dropping to ~60 mW at 100°C ambient per the published Pch vs. Ta curve.

Is BB504CDS-TL-H compliant with RoHS and lead-free assembly requirements?

Yes, BB504CDS-TL-H is RoHS-compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. The CMPAK-4 package uses matte tin terminations and meets MSL Level 1 (unlimited floor life), supporting standard SMT processes without special handling or baking requirements prior to assembly.