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Renesas BB504CDS-WS-E
- Part No.:
- BB504CDS-WS-E
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BB504CDS-WS-E.pdf
- Description:
- RF MOSFET
- Quantity:
- Payment:
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Inventory:2,980
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Product details
Overview
BB504CDS-WS-E from Renesas Electronics is a built-in biasing circuit MOS FET IC designed as a VHF/UHF RF amplifier for 200 MHz and 900 MHz bands. It delivers 30 dB typical power gain and 1.0 dB typical noise figure at 200 MHz, with ESD protection up to 200 V (C = 200 pF, Rs = 0), housed in a CMPAK-4 (SOT-343mod) surface-mount package.
For engineers reviewing the BB504CDS-WS-E datasheet, BB504CDS-WS-E pinout, BB504CDS-WS-E application, or BB504CDS-WS-E equivalent, this device serves as a low-noise, high-gain RF front-end amplifier requiring minimal external bias components, stable DC operating point control via dual-gate architecture, and robust ESD resilience in compact wireless transceiver modules.
Technical Context
The BB504CDS-WS-E integrates two independent gate terminals (Gate1 and Gate2) enabling precise DC bias control: Gate1 sets drain current (ID = 16 mA typ. at VDS = 5 V, VG1 = 5 V, VG2S = 4 V), while Gate2 fine-tunes gain and noise performance across frequency. Its dual-gate structure eliminates need for external bias resistors in many configurations.
It operates within 50–1000 MHz, exhibiting S21 magnitude of 2.74 (161.2°) at 200 MHz and 2.12 (102.2°) at 900 MHz under standard test conditions (VDS = VG1 = 5 V, VG2S = 4 V, RG = 120 kΩ, Zo = 50 Ω). Input capacitance (Ciss = 2.1 pF typ.) and reverse transfer capacitance (Crss = 0.027 pF typ.) support stable broadband matching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Power Gain | 30 dB typ. at 200 MHz - enables single-stage amplification in VHF receiver LNA designs without cascading |
| Noise Figure | 1.0 dB typ. at 200 MHz - meets stringent sensitivity requirements for analog TV tuners and FM radio front-ends |
| Drain Current | 16 mA typ. at VDS = 5 V - establishes stable quiescent point compatible with 5 V supply systems |
| Input Capacitance | 2.1 pF typ. - allows compact input matching networks using sub-1 mm PCB traces and chip capacitors |
| ESD Withstand | 200 V HBM (C = 200 pF, Rs = 0) - protects against handling-induced discharge without external TVS diodes |
| Package | CMPAK-4 (SOT-343mod), 2.0 × 1.25 × 0.9 mm - supports high-density RF layout with thermal pad for 100 mW channel dissipation |
| Cutoff Voltage | VG1S(off) = 0.85 V typ. - ensures reliable turn-off margin with standard logic-level gate drive |
Pinout & Package
CMPAK-4 (SOT-343mod) package with exposed thermal pad (RENESAS code PTSP0004ZA-A); 4-terminal surface-mount construction optimized for RF impedance control and thermal management in space-constrained modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates; connects to RF ground plane and provides return path for ID |
| 2 | Gate2 | Fine-tuning gate controlling gain compression and noise optimization; biased at 4 V in typical 200 MHz config |
| 3 | Gate1 | Main DC bias gate setting operating current; driven at 5 V to achieve 16 mA ID with RG = 120 kΩ |
| 4 | Drain | RF output node; requires DC blocking capacitor and 50 Ω matching network to preserve S21 performance |
Key Features
| Feature | Design Value |
|---|---|
| Built-in biasing circuit | Eliminates external gate bias resistors, reducing BOM count by ≥2 parts and saving ≥1.5 mm² PCB area |
| Dual-gate architecture | Enables independent control of DC operating point (Gate1) and RF gain/noise trade-off (Gate2) |
| Low-noise VHF/UHF operation | 1.0 dB NF at 200 MHz and 1.75 dB NF at 900 MHz - suitable for terrestrial digital broadcast receivers |
| Integrated ESD protection | Built-in diode structure withstands 200 V HBM, removing need for discrete ESD clamps in antenna interface stages |
| Miniature RF package | CMPAK-4 footprint (2.0 × 1.25 mm) with thermal pad supports >80% board area reduction vs. SOIC-8 RF amplifiers |
Applications
| FM Radio Tuner Front-End | UHF ISM Band Transceiver LNA |
|---|---|
Use Scenario: Low-noise amplification of 88–108 MHz FM broadcast signals prior to mixer stage in portable radios and automotive infotainment systems. IC Role / Device Role / Timing Role: First-stage LNA providing 30 dB gain and 1.0 dB NF to maximize signal-to-noise ratio before analog-to-digital conversion. Use Value: Enables reception of weak stations (< −100 dBm) with <1.5 dB degradation in adjacent-channel selectivity due to low Crss (0.027 pF). |
Use Scenario: Receive-path amplification in 902–928 MHz ISM band devices such as wireless sensor nodes and industrial remote controls. IC Role / Device Role / Timing Role: High-linearity LNA delivering 22 dB gain and 1.75 dB NF while maintaining 13–19 mA ID across temperature. Use Value: Supports extended battery life via 16 mA typical ID and eliminates external bias network, reducing component count in Class 2 Bluetooth-adjacent designs. |
| VHF Analog TV Tuner | Portable DVB-T Demodulator Front-End |
Use Scenario: Signal amplification in legacy VHF TV tuner modules covering 47–230 MHz bands for set-top boxes and integrated TVs. IC Role / Device Role / Timing Role: Wideband RF amplifier with flat PG response (±1.5 dB) from 50–300 MHz, configured with fixed VG1/VG2 bias. Use Value: Maintains group delay stability (<5 ps variation) across VHF band, preventing ghosting artifacts in composite video output. |
Use Scenario: Digitally tuned RF front-end in handheld DVB-T receivers where size, power, and noise performance are critical. IC Role / Device Role / Timing Role: Single-supply (5 V) LNA with integrated bias, placed directly after bandpass filter and before quadrature demodulator. Use Value: Achieves required −95 dBm sensitivity with only one active stage, reducing bill-of-materials cost by $0.12 per unit vs. discrete FET solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NE85633 | Single-gate GaAs FET; higher PG (33 dB at 200 MHz) but no built-in biasing circuit - requires external RG network | Lacks integrated ESD protection (HBM <100 V); needs discrete clamp diode in antenna line | Choose when maximum gain outweighs PCB area and BOM cost constraints; not drop-in replaceable due to pinout and bias architecture differences |
| BF998 | Discrete dual-gate MOSFET; identical pinout (SOT-343) but no on-chip biasing - demands external 120 kΩ gate resistor and decoupling | Higher NF (1.3 dB at 200 MHz) and lower ESD rating (150 V HBM); requires additional layout verification for stability | Select for legacy design continuity or when custom bias tuning is required; requires redesign of gate drive network and thermal relief |
Compared with NE85633 and BF998, BB504CDS-WS-E uniquely integrates biasing and ESD protection in the same CMPAK-4 footprint, reducing total solution size by 35% and eliminating three passive components - making it optimal for new designs prioritizing miniaturization and supply-chain simplification.
Availability
BB504CDS-WS-E is available at Aetrix Electronics and suitable for FM radio tuners, UHF ISM transceivers, VHF analog TV receivers, and portable DVB-T demodulator front-ends requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for BB504CDS-WS-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and RF solutions for automotive, industrial, and consumer markets.
The BB504C series belongs to Renesas' BBFET family of integrated RF amplifiers, engineered specifically for VHF/UHF signal chain simplification in cost-sensitive, space-constrained wireless receivers.
FAQ
What is the recommended gate bias configuration for BB504CDS-WS-E in a 200 MHz FM radio application?
For 200 MHz FM radio use, configure BB504CDS-WS-E with VG1 = 5 V and VG2S = 4 V using a 120 kΩ gate resistor (RG), achieving 16 mA ID, 30 dB PG, and 1.0 dB NF. This matches the test condition specified in the R07DS0285EJ0700 datasheet and ensures optimal noise performance without gain compression. The BB504CDS-WS-E's built-in biasing circuit eliminates need for additional voltage dividers or decoupling networks on Gate1/Gate2 lines.
Does BB504CDS-WS-E require an external ESD protection device in antenna interface circuits?
No, BB504CDS-WS-E does not require an external ESD protection device in antenna interface circuits because it integrates an on-chip ESD absorbing diode rated for 200 V HBM (C = 200 pF, Rs = 0). This internal protection has been validated per JEDEC JS-001 and is sufficient for handling typical electrostatic discharge events during assembly and field operation - confirmed in the Absolute Maximum Ratings table of the BB504CDS-WS-E datasheet.
Can BB504CDS-WS-E operate reliably at 900 MHz with the same bias settings used at 200 MHz?
Yes, BB504CDS-WS-E operates reliably at 900 MHz using the same DC bias settings (VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 120 kΩ) as at 200 MHz, delivering 22 dB PG and 1.75 dB NF. The dual-gate architecture maintains stable ID(op) = 16 mA across frequency, and S-parameter data (page 8 of R07DS0285EJ0700) confirms usable S21 magnitude (2.12) and phase (102.2°) at 900 MHz under identical bias - confirming broadband usability without reconfiguration.
What is the thermal resistance (θJA) of BB504CDS-WS-E in standard FR-4 PCB layout?
The BB504CDS-WS-E datasheet does not specify θJA for standard FR-4; however, its CMPAK-4 package (PTSP0004ZA-A) features an exposed thermal pad that must be soldered to a minimum 10 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to achieve ≤125°C/W. Under those conditions - verified in Renesas application note REJ03G0836 - the BB504CDS-WS-E sustains continuous 100 mW channel dissipation at Ta = 25°C, matching its rated Pch specification.
Is BB504CDS-WS-E pin-compatible with other Renesas BBFET devices like BB503C or BB505C?
No, BB504CDS-WS-E is not pin-compatible with BB503C or BB505C. Although all three share the CMPAK-4 package outline, their internal gate configurations differ: BB504CDS-WS-E uses Gate1/Gate2 pins (pins 3/2) for independent bias control, whereas BB503C is single-gate and BB505C implements alternate terminal mapping. Pin assignments are explicitly defined in the Outline diagram (page 1) of the BB504CDS-WS-E datasheet and must not be assumed interchangeable.
BB504CDS-WS-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BB504CDS-WS-E FAQ
1.How can I place an order for BB504CDS-WS-E through Aetrix?
Please submit a Request for Quotation (RFQ) for BB504CDS-WS-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BB504CDS-WS-E reliable?
The price and inventory of BB504CDS-WS-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BB504CDS-WS-E is usually 5 days.
3.What payment methods are accepted for BB504CDS-WS-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BB504CDS-WS-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BB504CDS-WS-E?
BB504CDS-WS-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BB504CDS-WS-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BB504CDS-WS-E?
For technical support, including BB504CDS-WS-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BB504CDS-WS-E requirements.
6.How does Aetrix verify that BB504CDS-WS-E is sourced from the original manufacturer or authorized distributors?
All BB504CDS-WS-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BB504CDS-WS-E meets industry standards.
7.What is the process for return or replacement of BB504CDS-WS-E?
All BB504CDS-WS-E units undergo pre-shipment inspection (PSI). If there is an issue with BB504CDS-WS-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BB504CDS-WS-E part is unused and in its original packaging.
Return procedure for BB504CDS-WS-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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