My Inquiry
My Account
Renesas BB504MDS-TL-E
- Part No.:
- BB504MDS-TL-E
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BB504MDS-TL-E.pdf
- Description:
- RF MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:786,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BB504MDS-TL-E from Renesas Electronics is a built-in biasing circuit MOS FET IC designed as a VHF/UHF RF amplifier for 200 MHz and 900 MHz bands. It delivers 30 dB typical power gain at 200 MHz and 22 dB at 900 MHz, with noise figures of 1.0 dB and 1.75 dB respectively, operating at 5 V drain-source voltage and 16 mA typical drain current in mobile radio front-end stages.
For engineers reviewing the BB504MDS-TL-E datasheet, BB504MDS-TL-E pinout, BB504MDS-TL-E application, or BB504MDS-TL-E equivalent, this part supports low-noise, high-gain amplification in compact RF signal chains where ESD robustness (200 V HBM), integrated biasing, and MPAK-4 package size are critical selection criteria.
Technical Context
The BB504MDS-TL-E integrates dual-gate MOSFET architecture with separate Gate1 and Gate2 terminals enabling independent DC bias control and RF signal injection. Its built-in biasing circuit eliminates external gate resistors in basic configurations, reducing component count while maintaining stable 16 mA operating current under VG1 = 5 V and VG2S = 4 V conditions.
It features low parasitic capacitance (Ciss = 2.1 pF typ., Coss = 1.4 pF typ., Crss = 0.027 pF typ.) optimized for VHF/UHF matching networks, and incorporates on-chip ESD protection diodes rated to 200 V (HBM, C = 200 pF, Rs = 0 Ω), supporting rugged deployment in handheld transceiver modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Power Gain | 30 dB typ. at 200 MHz - enables single-stage amplification without cascading in FM/TV tuners |
| Noise Figure | 1.0 dB typ. at 200 MHz - preserves SNR in weak-signal VHF reception paths |
| Drain Current | 16 mA typ. at VDS = 5 V - sets quiescent power at 80 mW, compatible with thermal limits of MPAK-4 |
| Input Capacitance | 2.1 pF typ. - simplifies impedance matching network design below 1 GHz |
| ESD Withstand | 200 V HBM - eliminates need for external TVS in cost-sensitive consumer RF modules |
| Cutoff Voltage | VG1S(off) = 0.85 V typ. - ensures reliable turn-off margin with standard 3.3 V logic control |
| Package | MPAK-4 (SOT-143Rmod) - 1.95 × 2.8 mm footprint saves PCB area vs. SOT-23 |
Pinout & Package
Package: MPAK-4 (SOT-143Rmod), JEITA code SC-61AA, Renesas code PLSP0004ZA-A, 1.95 mm × 2.8 mm × 0.95 mm body, 4-terminal surface-mount molded plastic package with exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates and drain; connects to RF ground plane for stability |
| 2 | Gate1 | Main RF input terminal; biased at +5 V for linear amplification; controls channel conductance |
| 3 | Gate2 | Bias control terminal; set to +4 V to establish 16 mA ID; enables gain tuning via VG2S |
| 4 | Drain | RF output node; requires DC blocking capacitor and 50 Ω matching network; thermally coupled to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Built-in biasing circuit | Eliminates external gate resistor network, reducing BOM count by ≥2 components and saving ≥3 mm² PCB area |
| Low-noise VHF/UHF operation | 1.0 dB NF at 200 MHz and 1.75 dB NF at 900 MHz enable sensitivity-critical receiver front-ends |
| Dual-gate MOSFET architecture | Independent Gate1 (RF input) and Gate2 (bias control) allow gain adjustment without disturbing DC operating point |
| On-chip ESD protection | 200 V HBM rating removes requirement for discrete ESD diode in handheld device antenna paths |
| Miniature MPAK-4 package | 1.95 × 2.8 mm footprint supports high-density RF module layouts in space-constrained IoT and portable radios |
Applications
| FM/AM Radio Tuner Front-End | UHF Wireless Microphone Receiver |
|---|---|
Use Scenario: Amplifying weak broadcast signals (87–108 MHz FM, 530–1710 kHz AM) before mixer stage in portable radios. IC Role / Device Role / Timing Role: Low-noise preamplifier providing 30 dB gain at 200 MHz with 1.0 dB NF to maximize signal-to-noise ratio. Use Value: Enables reception of marginal-strength stations without external LNA stages, reducing system power and component count. | Use Scenario: Boosting microphone RF output (470–960 MHz) in battery-powered wireless mic receivers before demodulation. IC Role / Device Role / Timing Role: High-linearity RF amplifier delivering 22 dB gain and 1.75 dB NF at 900 MHz in compact form factor. Use Value: Maintains audio fidelity over extended range while fitting within tight enclosure constraints of handheld receivers. |
| TV Tuner IF Amplifier | ISM Band Transceiver LNA |
Use Scenario: Intermediate-frequency amplification (44–47 MHz) in analog/digital TV tuner modules for terrestrial broadcast. IC Role / Device Role / Timing Role: Stable gain block with low Crss (0.027 pF) minimizing feedback instability in multi-stage IF chains. Use Value: Ensures consistent channel selectivity and image rejection without neutralization capacitors or layout tweaks. | Use Scenario: Low-noise receive path amplification in 868/915 MHz ISM band IoT nodes (e.g., smart metering, sensor networks). IC Role / Device Role / Timing Role: First-stage LNA with 200 V HBM ESD rating protecting against handling damage during automated assembly. Use Value: Reduces field failure rate in unshielded industrial environments while meeting FCC/ETSI radiated emission limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NE680M03-T1B | Higher NF (2.0 dB @ 200 MHz), lower PG (27 dB), no integrated biasing - requires external RG network | Suitable for higher-power VHF amplifiers where thermal headroom exceeds BB504MDS-TL-E's 150 mW Pch limit | Select when absolute minimum noise is prioritized over board space and BOM simplicity |
| BF998,115 | Single-gate structure, higher ID(max) = 40 mA, no built-in ESD diode - needs external protection | Preferred in automotive-grade designs requiring AEC-Q200 qualification and wider temperature range (−40°C to +125°C) | Choose when extended temperature operation or higher output power is required, accepting added external components |
Compared with NE680M03-T1B and BF998,115, the BB504MDS-TL-E provides superior integration (biasing + ESD), smaller footprint, and lower noise at 200 MHz, making it optimal for cost-sensitive, space-constrained consumer RF front-ends where 150 mW power dissipation and 200 V ESD tolerance are sufficient.
Availability
BB504MDS-TL-E is available at Aetrix Electronics and suitable for FM radio tuners, UHF wireless microphones, TV IF amplifiers, and ISM band transceivers requiring stable component supply across production volumes.
Supply support for BB504MDS-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.
The BB504MDS-TL-E belongs to Renesas' BBFET family of integrated RF MOSFETs, engineered specifically for low-noise, high-gain amplification in compact VHF/UHF signal chains where biasing simplicity and ESD resilience are essential.
FAQ
What is the maximum operating frequency range supported by the BB504MDS-TL-E?
The BB504MDS-TL-E is characterized for operation from 50 MHz to 1000 MHz, with verified performance at 200 MHz (30 dB gain, 1.0 dB NF) and 900 MHz (22 dB gain, 1.75 dB NF). S-parameter data confirms stable S21 response across this full band, making BB504MDS-TL-E suitable for VHF and UHF applications including FM radio, TV tuners, and ISM-band systems.
Does the BB504MDS-TL-E require external biasing components?
No, the BB504MDS-TL-E integrates a built-in biasing circuit that eliminates the need for external gate resistors in standard configurations. When operated at VG1 = 5 V and VG2S = 4 V, BB504MDS-TL-E delivers its specified 16 mA drain current without additional passive components, reducing PCB area and BOM cost versus discrete MOSFET solutions.
What is the thermal limitation of the BB504MDS-TL-E in continuous operation?
The BB504MDS-TL-E has a maximum channel power dissipation (Pch) of 150 mW and a channel temperature limit of 150°C. At its typical 5 V / 16 mA operating point (80 mW), thermal design must ensure junction-to-ambient resistance remains ≤ 875°C/W. The MPAK-4 package's exposed drain pad should be soldered to a thermal pad on the PCB to maintain safe operation under ambient temperatures up to 85°C.
How does the dual-gate structure of the BB504MDS-TL-E improve RF system design?
The dual-gate architecture of BB504MDS-TL-E separates RF signal injection (Gate1) from DC bias control (Gate2), allowing independent optimization of gain and operating point. This enables precise gain adjustment via VG2S without disrupting RF matching, reduces second-order intermodulation distortion, and simplifies design of variable-gain amplifiers compared to single-gate alternatives.
Is the BB504MDS-TL-E RoHS compliant and lead-free?
Yes, the BB504MDS-TL-E is RoHS compliant and lead-free. Per Renesas documentation, it meets EU RoHS Directive requirements for restricted substances, and the MPAK-4 package uses lead-free matte tin plating. The device is rated for reflow soldering per J-STD-020, with peak temperature tolerance up to 260°C, ensuring compatibility with standard lead-free PCB assembly processes.
BB504MDS-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BB504MDS-TL-E FAQ
1.How can I place an order for BB504MDS-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for BB504MDS-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BB504MDS-TL-E reliable?
The price and inventory of BB504MDS-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BB504MDS-TL-E is usually 5 days.
3.What payment methods are accepted for BB504MDS-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BB504MDS-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BB504MDS-TL-E?
BB504MDS-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BB504MDS-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BB504MDS-TL-E?
For technical support, including BB504MDS-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BB504MDS-TL-E requirements.
6.How does Aetrix verify that BB504MDS-TL-E is sourced from the original manufacturer or authorized distributors?
All BB504MDS-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BB504MDS-TL-E meets industry standards.
7.What is the process for return or replacement of BB504MDS-TL-E?
All BB504MDS-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with BB504MDS-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BB504MDS-TL-E part is unused and in its original packaging.
Return procedure for BB504MDS-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BB504MDS-TL-E Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
