onsemi BC182LB

Overview

BC182LB from Fairchild Semiconductor is an NPN general-purpose amplifier transistor rated for 50 V V_CEO, 100 mA continuous collector current, and 150 MHz f_T, designed for low-noise small-signal amplification in audio preamplifier stages and signal conditioning circuits.

For engineers reviewing the BC182LB datasheet, pinout, applications, or equivalent options, key selection considerations include its 40–80 h_FE range at 10 µA–100 mA, 10 dB noise figure at 0.2 mA, TO-92 package thermal resistance (R_θJA = 357 °C/W), and verified V_BE(on) of 0.55–0.7 V at 2 mA.

Technical Context

The BC182LB operates as a silicon NPN bipolar junction transistor with DC current gain (h_FE) specified across two collector current points: 40 min at IC = 10 µA and 80 min at IC = 100 mA. Its f_T of 150 MHz confirms suitability for RF and wideband audio amplification up to mid-VHF frequencies.

Thermal performance is defined by 350 mW total dissipation at 25°C ambient, derated linearly at 2.8 mW/°C above that temperature. Output capacitance (C_ob) is 5 pF at V_CE = 10 V, supporting stable high-frequency biasing in tuned amplifier designs.

Key Specifications

Pinout & Package

BC182LB is housed in a standard TO-92 plastic package with lead spacing matching JEDEC TO-92 outline, enabling compatibility with automated through-hole assembly and manual prototyping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Compared with BC107B and BC547C, the BC182LB offers balanced trade-offs: moderate h_FE spread for predictable biasing, 150 MHz f_T for robust mid-band amplification, and 50 V V_CEO headroom-making it especially suitable for cost-sensitive, wide-temperature-range analog front-ends where gain linearity and thermal stability are critical.

Availability

BC182LB is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal conditioners, RF intermediate frequency amplifiers, and discrete oscillator circuits requiring stable component supply across industrial and consumer electronics programs.

Supply support for BC182LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The BC182LB belongs to Fairchild's legacy BC-series general-purpose NPN transistors, engineered for reliability and consistent parametric performance in analog signal path applications across consumer, industrial, and communications equipment.

FAQ

What is the maximum collector-emitter voltage rating for BC182LB?

The BC182LB has a maximum collector-emitter voltage (V_CEO) rating of 50 V at T_C = 25°C. This value is measured with the base open and defines the upper limit for safe DC or peak AC voltage applied between collector and emitter without risking avalanche breakdown. Exceeding this rating may cause irreversible device failure. The BC182LB datasheet confirms this parameter under Absolute Maximum Ratings and verifies it again in Off Characteristics as V(BR)_CEO ≥ 50 V at I_C = 2 mA.

Does BC182LB support high-frequency amplification, and up to what frequency?

Yes, the BC182LB supports high-frequency amplification with a current gain bandwidth product (f_T) of 150 MHz, measured at V_CE = 5 V, I_C = 10 mA, and f = 100 MHz. This indicates usable small-signal gain up to approximately 50 MHz in practical common-emitter configurations. Its 5 pF output capacitance (C_ob) and low noise figure further support stable RF and wideband audio use. The BC182LB is not intended for GHz-range operation.

What is the DC current gain (h_FE) range of BC182LB, and how does it vary with operating conditions?

The BC182LB exhibits a DC current gain (h_FE) range of 40–80, specified at V_CE = 5 V across two collector current points: minimum 40 at I_C = 10 µA and minimum 80 at I_C = 100 mA. This intentional spread reflects typical BJT behavior-gain rises with current due to improved carrier injection efficiency. Designers must account for this variation when setting bias points. The BC182LB datasheet provides no typ/max values beyond these minima, confirming the part is binned for guaranteed minimum h_FE.

What package type is used for BC182LB, and are its pin assignments standardized?

The BC182LB uses the TO-92 plastic package with standardized pinout: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base-viewed with flat side facing outward and leads pointing down. This matches JEDEC TO-92 outline dimensions and is mechanically and electrically compatible with BC107, BC108, and BC109 variants. The BC182LB datasheet includes full dimensional drawings confirming lead pitch (1.27 mm), body length (4.58 mm), and flange-to-lead distance (1.02 mm).

How does BC182LB perform in low-noise applications compared to other general-purpose NPN transistors?

The BC182LB delivers a noise figure (NF) of 10 dB at V_CE = 5 V, I_C = 0.2 mA, R_S = 2 kΩ, and 200 Hz bandwidth-making it competitive among legacy general-purpose NPNs for low-noise preamplification. Its 15 nA ICBO and IEBO leakage values minimize bias drift in high-impedance nodes. While newer low-noise transistors (e.g., PN2222A variants) may achieve <8 dB NF, the BC182LB remains validated for microphone and sensor front-ends where its 150 MHz f_T and stable h_FE provide balanced performance. The BC182LB datasheet explicitly cites "low-noise" in its device description.