Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BC237ABU

Part No.:
BC237ABU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
AetrixBC237ABU.pdf
Description:
TRANS NPN 45V 0.1A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,077

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC237ABU from Fairchild Semiconductor is an NPN epitaxial silicon transistor optimized for low-noise amplifier and general-purpose switching applications, with hFE 180–460, VCEO = 45 V, IC = 100 mA, PC = 500 mW, and fT = 150–250 MHz. It operates in audio preamplifier stages and discrete logic-level switching circuits where moderate gain and bandwidth are required.

For engineers reviewing the BC237ABU datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain classification (Class B), collector-emitter saturation voltage at 10 mA/0.5 mA drive, noise figure (2 dB @ 1 kHz), TO-92 mechanical compatibility, and thermal derating above 25°C ambient.

Technical Context

The BC237ABU is a discrete bipolar junction transistor with epitaxial base construction enabling stable hFE across temperature and improved high-frequency response. Its 150–250 MHz fT supports small-signal amplification up to VHF band edges, while VCE(sat) ≤ 0.2 V at IC = 10 mA / IB = 0.5 mA ensures efficient switching in low-power digital interfaces.

Designed for Class B hFE binning (180–460), it delivers tighter gain consistency than generic BC237 variants. The 2 dB noise figure at 1 kHz with RG = 2 kΩ confirms suitability for microphone preamp input stages, and Cob = 3.5–6 pF minimizes Miller-effect instability in common-emitter configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO45 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions; defines usable supply headroom in amplifier bias networks.
hFE (Class B)180–460 - Confirmed DC current gain range at VCE = 5 V, IC = 2 mA; enables predictable bias point setting in emitter-follower or CE amplifier designs.
fT150–250 MHz - Current-gain bandwidth product measured at VCE = 3–5 V; determines upper frequency limit for small-signal amplification without gain roll-off.
VCE(sat)≤ 0.2 V @ IC = 10 mA / IB = 0.5 mA - Low saturation voltage reduces power loss and improves logic-level compatibility in saturated-switch applications.
NF2 dB @ 1 kHz, RG = 2 kΩ - Verified noise figure for low-level signal amplification; critical for microphone and sensor front-end stages requiring minimal added noise.
Cob3.5–6 pF @ VCB = 10 V - Output capacitance directly impacts high-frequency stability and bandwidth in common-emitter amplifiers.

Pinout & Package

BC237ABU is housed in a standard TO-92 plastic package (3.60 × 4.58 × 14.47 mm) with lead spacing of 1.27 mm, compatible with manual soldering and wave-solder processes. Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter - verified per Fairchild Rev. A2 datasheet Figure "Package Dimensions" and pin numbering diagram.

Pin/TerminalCircuit RoleDesign Meaning
1 (Collector)Main current output terminalCarries full load current in switching mode; connects to supply rail or load in common-emitter amplifier configuration.
2 (Base)Control input terminalReceives bias current to modulate collector current; requires series resistor to limit drive and prevent thermal runaway.
3 (Emitter)Current return pathProvides reference node for bias network; often tied to ground or emitter degeneration resistor in amplifier designs.

Key Features

FeatureDesign Value
Low-noise amplifier grade2 dB noise figure at 1 kHz enables use in sensitive analog front-ends without requiring costly JFET alternatives.
Class B hFE binningGuaranteed 180–460 hFE range allows consistent DC bias design across production lots without individual trimming.
High fT with low Cob250 MHz fT combined with ≤6 pF Cob supports stable RF amplification up to ~50 MHz with minimal neutralization.
TO-92 mechanical standardizationMatches JEDEC TO-92 outline dimensions, ensuring compatibility with existing PCB footprints and automated assembly tooling.

Applications

Audio Preamp StageDiscrete Logic-Level Switch

Use Scenario: Amplifying weak signals from electret microphones or piezoelectric sensors in portable audio devices.

IC Role / Device Role / Timing Role: Small-signal NPN amplifier in common-emitter configuration with emitter degeneration.

Use Value: 2 dB noise figure and 180–460 hFE ensure high SNR and repeatable gain without active feedback compensation.

Use Scenario: Driving LEDs, relays, or MOSFET gates from 3.3 V or 5 V microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Saturated switch with base current limiting resistor controlling collector current flow.

Use Value: VCE(sat) ≤ 0.2 V at 10 mA reduces power dissipation and maintains logic-high margin on driven loads.

RF Signal BufferCurrent Mirror Reference

Use Scenario: Isolating oscillator outputs or buffering VCO signals in low-power UHF transceivers.

IC Role / Device Role / Timing Role: Common-collector (emitter-follower) buffer stage preserving signal integrity and impedance matching.

Use Value: 250 MHz fT and low Cob enable flat gain response up to 30 MHz with minimal phase shift.

Use Scenario: Establishing matched bias currents in analog ICs or discrete op-amp designs requiring precision current sources.

IC Role / Device Role / Timing Role: Active component in two-transistor current mirror topology with matched hFE and thermal tracking.

Use Value: Tight hFE binning (Class B) and epitaxial base structure reduce mirror ratio error and improve temperature stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC547BHigher VCEO (45 V same), but hFE 200–450 (similar range); fT ~ 300 MHz; Cob ≈ 4.5 pF.Slightly higher bandwidth and identical noise performance; widely available in modern production.Preferred when higher fT is needed without changing layout; verify thermal derating at >100 mA.
PN2222ALower hFE (100–300), higher IC (600 mA), larger VCE(sat) (0.3 V min), no guaranteed noise spec.Better suited for medium-power switching; not recommended for low-noise analog stages.Select only for robust switching where gain consistency and noise are secondary to current handling.

Compared with BC547B and PN2222A, BC237ABU offers superior noise performance (2 dB vs. unspecified or ≥4 dB) and tighter hFE control within Class B, making it optimal for precision low-level amplification where signal integrity is critical.

Availability

BC237ABU is available at Aetrix Electronics and suitable for audio preamplifier design, discrete logic-level switching, and RF signal buffering requiring stable component supply and long-term obsolescence management.

Supply support for BC237ABU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The BC237ABU belongs to Fairchild's legacy BC237/238/239 family of general-purpose NPN transistors, designed specifically for cost-sensitive, high-reliability analog and switching applications in consumer, industrial, and communications equipment.

FAQ

What is the hFE range for BC237ABU?

The BC237ABU is binned to Class B hFE, guaranteeing a DC current gain of 180–460 at VCE = 5 V and IC = 2 mA. This range is confirmed in the Fairchild Rev. A2 datasheet under "hFE Classification" and ensures predictable biasing in amplifier and switching circuits without individual device characterization. BC237ABU's hFE stability across temperature further supports reliable operation in unregulated environments.

Is BC237ABU suitable for low-noise audio applications?

Yes, BC237ABU is explicitly characterized for low-noise operation with a noise figure of 2 dB at 1 kHz, RG = 2 kΩ, VCE = 5 V, and IC = 0.2 mA. This specification-documented in the Fairchild BC237/238/239 datasheet-makes BC237ABU appropriate for microphone preamplifiers and other sensitive analog front-end stages where minimizing added noise is essential.

What is the maximum collector current rating for BC237ABU?

The absolute maximum DC collector current for BC237ABU is 100 mA, as specified in the "Absolute Maximum Ratings" table of the Fairchild datasheet. Derating is required above 25°C ambient: power dissipation must be reduced linearly beyond 500 mW at 25°C, with full derating to zero at 150°C junction temperature. BC237ABU's thermal resistance (RθJA) supports this rating in standard TO-92 mounting conditions.

Does BC237ABU have a defined pinout configuration?

Yes, BC237ABU uses the standard TO-92 pinout: Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter - confirmed in the "Package Dimensions" section of the Fairchild Rev. A2 datasheet. This configuration is consistent across the BC237/238/239 family and matches JEDEC TO-92 mechanical drawings, ensuring compatibility with existing footprints and assembly tooling.

What is the typical fT value for BC237ABU?

The current gain–bandwidth product (fT) for BC237ABU is specified as 150 MHz (min) to 250 MHz (max), measured at VCE = 3 V or 5 V, IC = 0.5–10 mA, and f = 100 MHz. This fT range-listed in the "Electrical Characteristics" table-enables stable small-signal amplification up to approximately 50 MHz in properly compensated common-emitter configurations.

BC237ABU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 5V
Power - Max:
500 mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

BC237ABU FAQ

1.How can I place an order for BC237ABU through Aetrix?

Please submit a Request for Quotation (RFQ) for BC237ABU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC237ABU reliable?

The price and inventory of BC237ABU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC237ABU is usually 5 days.

3.What payment methods are accepted for BC237ABU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC237ABU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC237ABU?

BC237ABU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC237ABU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC237ABU?

For technical support, including BC237ABU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC237ABU requirements.

6.How does Aetrix verify that BC237ABU is sourced from the original manufacturer or authorized distributors?

All BC237ABU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC237ABU meets industry standards.

7.What is the process for return or replacement of BC237ABU?

All BC237ABU units undergo pre-shipment inspection (PSI). If there is an issue with BC237ABU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC237ABU part is unused and in its original packaging.

Return procedure for BC237ABU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC237ABU Tags

  • BC237ABU
  • BC237ABU PDF
  • BC237ABU Datasheet
  • BC237ABU Specifications
  • BC237ABU Images
  • onsemi
  • onsemi BC237ABU
  • Buy BC237ABU
  • BC237ABU Price
  • BC237ABU Distributor
  • BC237ABU Supplier
  • BC237ABU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER