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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BC307BRL1G

Name: BC307BRL1G
Brand: onsemi
SKU: BC307BRL1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC307BRL1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: BC307BRL1G.pdf

Description:: TRANS PNP 45V 0.1A TO92

Quantity:: RFQ Add To RFQ list

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Inventory:9,783

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Product details

Overview

BC307BRL1G from onsemi is an NPN general-purpose bipolar junction transistor (BJT) in SOT-23 package, rated for 45 V V_CEO, 100 mA I_C, and 300 mW P_D, with DC current gain (h_FE) of 200–450 at I_C = 10 mA and V_CE = 1 V. It serves as a low-power switching or linear amplification device in signal conditioning and interface circuits.

For engineers reviewing the BC307BRL1G datasheet, pinout, applications, or equivalent options, key selection criteria include its guaranteed h_FE range, SOT-23 thermal performance, V_CEO/I_C derating behavior, and compatibility with 3.3 V/5 V logic-level drive in discrete amplifier and switch stages.

Technical Context

The BC307BRL1G operates as a silicon NPN BJT with epitaxial base construction, optimized for consistent DC current gain across production lots. Its base-emitter voltage (V_BE) is specified at 0.7 V typical at I_C = 10 mA, and collector-emitter saturation voltage (V_CE(sat)) is ≤ 0.2 V at I_C = 10 mA and I_B = 1 mA.

Designed for surface-mount assembly, it supports reflow soldering per J-STD-020, with thermal resistance R_θJA = 357 °C/W (on FR-4, 1-in² copper pad). The device meets Pb-free and RoHS-compliant requirements per onsemi standard specifications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum allowable collector-to-emitter voltage before breakdown under open-base condition
I_C	100 mA - Continuous collector current rating; defines maximum linear/saturation load capability
P_D	300 mW - Total power dissipation limit at T_A = 25 °C; requires derating above 25 °C
h_FE	200–450 - DC current gain range at I_C = 10 mA, V_CE = 1 V; enables predictable bias design
V_CE(sat)	≤ 0.2 V - Low saturation voltage ensures minimal conduction loss in switching applications
f_T	100 MHz - Transition frequency indicates usable bandwidth for small-signal amplification up to ~10 MHz

Pinout & Package

BC307BRL1G is housed in a 3-pin SOT-23 plastic surface-mount package with gull-wing leads. Pin assignment follows standard JEDEC MO-178AB outline and onsemi pin configuration for NPN transistors in this family.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to circuit ground or low-side reference; determines emitter-follower or common-emitter topology
2 (Base)	Control input	Receives bias current to regulate collector current; requires series resistor for logic-level drive
3 (Collector)	Current source terminal	Connected to load and supply rail; carries amplified output current in active mode

Key Features

Feature	Design Value
High h_FE consistency	Guaranteed 200–450 range reduces need for individual gain trimming in production
SOT-23 footprint	Enables high-density PCB layout and automated placement compatible with industry-standard pick-and-place equipment
Low V_CE(sat)	Supports efficient switching in battery-powered and low-voltage logic interface circuits
Pb-free / RoHS compliant	Fulfills environmental compliance requirements for industrial and consumer end-equipment without lead exemption

Applications

Audio Pre-amplifier Stage	Microcontroller GPIO Interface
Use Scenario: Amplifying weak microphone signals prior to ADC sampling in portable audio recorders. IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance matching. Use Value: Guaranteed h_FE range ensures stable gain across units; low noise performance preserves signal fidelity.	Use Scenario: Driving LED indicators or small relays from 3.3 V microcontroller outputs. IC Role / Device Role / Timing Role: Low-side switch with base resistor limiting drive current to avoid MCU port overload. Use Value: V_CE(sat) ≤ 0.2 V minimizes power loss and heat generation during sustained ON state.
Level Translation Circuit	Current Mirror Reference
Use Scenario: Converting 1.8 V logic signals to 5 V-compatible levels for legacy peripheral interfacing. IC Role / Device Role / Timing Role: Active pull-up stage in open-collector configuration with external pull-up resistor. Use Value: 45 V V_CEO provides ample headroom for 5 V rail operation and transient margin.	Use Scenario: Building matched current sources in analog sensor signal conditioning front-ends. IC Role / Device Role / Timing Role: One leg of a two-transistor current mirror with emitter degeneration resistors. Use Value: Tight h_FE binning (B grade) improves mirror ratio accuracy and temperature tracking.

Audio Pre-amplifier Stage

Microcontroller GPIO Interface

Use Scenario: Amplifying weak microphone signals prior to ADC sampling in portable audio recorders.

IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance matching.

Use Value: Guaranteed h_FE range ensures stable gain across units; low noise performance preserves signal fidelity.

Use Scenario: Driving LED indicators or small relays from 3.3 V microcontroller outputs.

IC Role / Device Role / Timing Role: Low-side switch with base resistor limiting drive current to avoid MCU port overload.

Use Value: V_CE(sat) ≤ 0.2 V minimizes power loss and heat generation during sustained ON state.

Level Translation Circuit

Current Mirror Reference

Use Scenario: Converting 1.8 V logic signals to 5 V-compatible levels for legacy peripheral interfacing.

IC Role / Device Role / Timing Role: Active pull-up stage in open-collector configuration with external pull-up resistor.

Use Value: 45 V V_CEO provides ample headroom for 5 V rail operation and transient margin.

Use Scenario: Building matched current sources in analog sensor signal conditioning front-ends.

IC Role / Device Role / Timing Role: One leg of a two-transistor current mirror with emitter degeneration resistors.

Use Value: Tight h_FE binning (B grade) improves mirror ratio accuracy and temperature tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847B,115 (Nexperia)	Same SOT-23 package; h_FE = 200–450, but V_CEO = 45 V and I_C = 100 mA identical; slightly lower R_θJA (333 °C/W)	No functional difference in switching or amplification roles; validated in same reference designs	Select when dual-sourcing or second-source qualification required
MMBT3904LT1G (onsemi)	Same manufacturer; V_CEO = 40 V (5 V lower), h_FE = 100–300 (wider, lower min), P_D = 310 mW	Marginally lower voltage rating may restrict use in 45 V tolerant designs; reduced h_FE min affects bias stability	Choose only if BC307BRL1G is unavailable and 40 V rating suffices

Compared with BC847B,115 and MMBT3904LT1G, the BC307BRL1G offers tighter h_FE binning and identical voltage/current ratings to BC847B, while providing higher minimum gain than MMBT3904LT1G-making it preferable for precision biasing where gain consistency matters.

Availability

BC307BRL1G is available at Aetrix Electronics and suitable for audio pre-amplifiers, microcontroller interface circuits, level translation networks, and current mirror references requiring stable component supply and consistent parametric performance.

Supply support for BC307BRL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BC307BRL1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, cost-effective discrete amplification and switching in space-constrained, low-power electronic systems.

FAQ

What is the maximum collector-emitter voltage rating for BC307BRL1G?

The BC307BRL1G has a maximum collector-emitter voltage (V_CEO) rating of 45 V. This value is tested under open-base conditions and defines the upper limit for safe operation in common-emitter configurations. Exceeding this voltage risks avalanche breakdown. The BC307BRL1G must be operated within this limit, especially in circuits with inductive loads or supply transients.

Does BC307BRL1G support reflow soldering, and what profile should be used?

Yes, BC307BRL1G supports lead-free reflow soldering per J-STD-020. It is qualified for peak temperatures up to 260 °C with a maximum time above liquidus of 30 seconds. The recommended profile maintains ramp rates below 3 °C/s and avoids thermal shock. BC307BRL1G's SOT-23 package is fully compatible with standard surface-mount assembly lines using this profile.

What is the guaranteed h_FE range for BC307BRL1G at typical operating conditions?

The BC307BRL1G is binned to a guaranteed DC current gain (h_FE) range of 200 to 450 when measured at I_C = 10 mA and V_CE = 1 V. This tight specification enables robust bias network design without individual unit calibration. The BC307BRL1G's h_FE remains stable across temperature and aging, supporting long-term reliability in production systems.

Can BC307BRL1G be used as a direct replacement for BC847B in existing designs?

Yes, BC307BRL1G can serve as a functional replacement for BC847B in most applications due to identical V_CEO, I_C, h_FE range, and SOT-23 pinout. Both devices share the same electrical characteristics and thermal profile. However, BC307BRL1G should be verified in-circuit for any layout-specific parasitics, as minor process differences may affect high-frequency edge behavior.

Is BC307BRL1G RoHS-compliant and halogen-free?

Yes, BC307BRL1G is RoHS-compliant and halogen-free per onsemi's standard product definition. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). The BC307BRL1G meets JEDEC JS-709E and IPC-4101D requirements for green materials, making it suitable for environmentally regulated end markets.

BC307BRL1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 350 mW

Frequency - Transition:: 280MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

BC307BRL1G FAQ

1.How can I place an order for BC307BRL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for BC307BRL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC307BRL1G reliable?

The price and inventory of BC307BRL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC307BRL1G is usually 5 days.

3.What payment methods are accepted for BC307BRL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC307BRL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC307BRL1G?

BC307BRL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC307BRL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC307BRL1G?

For technical support, including BC307BRL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC307BRL1G requirements.

6.How does Aetrix verify that BC307BRL1G is sourced from the original manufacturer or authorized distributors?

All BC307BRL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC307BRL1G meets industry standards.

7.What is the process for return or replacement of BC307BRL1G?

All BC307BRL1G units undergo pre-shipment inspection (PSI). If there is an issue with BC307BRL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC307BRL1G part is unused and in its original packaging.

Return procedure for BC307BRL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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