onsemi BC32716BU

Overview

BC32716BU from ON Semiconductor is a PNP epitaxial silicon transistor designed for low-power switching and amplification, with confirmed V_CEO = −45 V, I_C = −800 mA, h_FE = 100–250 (at I_C = −100 mA), V_CE(sat) = −0.7 V (at I_C = −500 mA), and TO-92 3L package. It serves as a complement to BC337/BC338 in audio driver stages and low-power output circuits.

For engineers reviewing the BC32716BU datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, h_FE classification band (16), DC current gain range, saturation voltage under load, and thermal derating behavior in ambient-constrained PCB layouts.

Technical Context

This device operates as a general-purpose bipolar junction transistor with fixed emitter-base and collector-emitter breakdown limits (V_EBO = −5 V, V_CES = −50 V) and specified DC current gain h_FE binned per variant (BC32716BU = 100–250 at I_C = −100 mA). Its f_T = 100 MHz enables use in low-frequency signal amplification up to ~10 MHz.

Thermal design is constrained by R_θJA = 200 °C/W and PD = 625 mW at T_A = 25 °C, with linear derating of 5.0 mW/°C above ambient. The TO-92 3L package defines lead assignment (1 = Collector, 2 = Base, 3 = Emitter) and limits power handling in non-heatsinked applications.

Key Specifications

Pinout & Package

BC32716BU uses the standard TO-92 3L plastic package with leads arranged in straight-line configuration. Pin 1 is Collector, Pin 2 is Base, Pin 3 is Emitter - verified per Fairchild/ON Semiconductor mechanical drawings and absolute maximum ratings table.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with BC32716BU, BC327-16 offers identical gain binning and footprint but reduced high-current saturation performance, while MPSA92 trades gain and speed for extreme voltage tolerance-neither is pin-compatible nor functionally interchangeable without circuit revalidation.

Availability

BC32716BU is available at Aetrix Electronics and suitable for audio amplifier drivers, industrial solenoid controls, complementary push-pull stages, and discrete logic level shifters requiring stable component supply and consistent h_FE binning.

Supply support for BC32716BU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The BC327 series belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered for cost-sensitive, medium-speed switching and linear amplification in non-critical signal paths.

FAQ

What is the h_FE range guaranteed for BC32716BU?

The BC32716BU is binned to guarantee a DC current gain (h_FE) of 100 to 250 when measured at V_CE = −1 V and I_C = −100 mA. This classification ('16') is laser-marked on the device body as 'BC32716' and distinguishes it from BC32725 (160–400) and BC32740 (250–630). Designers must verify base drive sufficiency across this full range.

Is BC32716BU pin-compatible with BC337 NPN transistors?

BC32716BU is not pin-compatible with BC337, but it is electrically complementary: both use TO-92 3L packages with identical pinout (1 = Collector, 2 = Base, 3 = Emitter), enabling matched layout in push-pull or differential pairs. However, polarity reversal means external biasing networks must be adapted for PNP vs. NPN operation.

What is the maximum continuous collector current for BC32716BU?

The absolute maximum continuous collector current (I_C) for BC32716BU is −800 mA at T_A = 25 °C. Operation at this level requires strict adherence to thermal limits: power dissipation must stay ≤625 mW, and ambient temperature must remain ≤25 °C unless derated at 5 mW/°C. At 500 mA, V_CE(sat) remains ≤−0.7 V, confirming safe switching operation.

Can BC32716BU be used in high-frequency amplifier circuits?

BC32716BU has an f_T of 100 MHz, making it suitable for small-signal amplification up to approximately 10 MHz with acceptable gain roll-off. It is not recommended for RF or broadband applications above 20 MHz due to limited transition frequency and lack of specified S-parameters. For such uses, dedicated RF transistors like MMBT5551 should be selected instead of BC32716BU.

Does BC32716BU require heatsinking in typical applications?

BC32716BU does not require external heatsinking in typical applications drawing ≤300 mA, as its R_θJA = 200 °C/W and P_D = 625 mW allow junction temperatures to remain within 150 °C limit even on minimal FR-4 land patterns. At 500 mA with V_CE(sat) = −0.7 V, power dissipation reaches 350 mW - still within safe margin if ambient stays ≤75 °C. Heatsinking becomes necessary only near 800 mA sustained loads.