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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BC33716TAR

Name: BC33716TAR
Brand: onsemi
SKU: BC33716TAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC33716TAR

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: BC33716TAR.pdf

Description:: TRANS NPN 45V 0.8A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC33716TAR from ON Semiconductor is an NPN epitaxial silicon transistor in TO-92 package, rated for 45 V V_CEO, 800 mA I_C, and 625 mW P_D, with h_FE of 100–250 at I_C = 100 mA. It serves as a general-purpose switching and amplification device in low-power audio driver stages and signal conditioning circuits.

For engineers reviewing the BC33716TAR datasheet, pinout, applications, or equivalent options, key selection criteria include its DC current gain classification (h_FE 100–250), TO-92 mechanical compatibility, V_CEO/V_CES ratings, saturation voltage under 500 mA drive, and thermal resistance of 200 °C/W.

Technical Context

This discrete NPN bipolar junction transistor operates in linear or saturated mode depending on base drive and load conditions. Its h_FE classification (16) defines minimum/maximum DC current gain across I_C = 100 mA and 300 mA test points, while f_T = 100 MHz supports medium-frequency amplification up to ~10 MHz in practical designs.

Designed for through-hole mounting in cost-sensitive consumer and industrial electronics, the BC33716TAR uses standard TO-92 lead form (straight or bent) and complies with JEDEC TO-92 mechanical specifications. Its 5 V V_EBO rating limits base-emitter reverse bias, and Cob = 12 pF enables predictable high-frequency behavior in amplifier feedback networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum collector-emitter voltage before breakdown under open-base condition; sets safe operating voltage headroom in switching applications.
I_C (DC)	800 mA - Continuous collector current limit; determines maximum load drive capability without thermal runaway.
P_D	625 mW - Power dissipation at 25°C ambient; derates 5 mW/°C above 25°C, defining thermal design margin on PCB.
h_FE (100 mA)	100–250 - DC current gain range at V_CE = 1 V, I_C = 100 mA; used to size base resistor for reliable saturation in switch designs.
V_CE(sat)	0.7 V max - Collector-emitter voltage at I_C = 500 mA, I_B = 50 mA; directly impacts conduction loss and heat generation in on-state.
f_T	100 MHz - Current gain bandwidth product; indicates usable small-signal amplification up to ~10 MHz with gain >1.
C_ob	12 pF - Output capacitance at V_CB = 10 V; affects frequency response and stability in common-emitter amplifier configurations.

Pinout & Package

BC33716TAR is housed in a standard 3-lead TO-92 plastic package with straight or bent leads per JEDEC TO-92 specification. Lead orientation follows EIAJ ED-7400A: Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter when viewed with flat side facing user and leads downward.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current output terminal; connects to load or supply rail in common-emitter configuration; must withstand V_CEO = 45 V.
2	Base	Control input; requires current-limited drive (e.g., via series resistor) to achieve target h_FE-dependent I_C.
3	Emitter	Current return path; typically grounded in common-emitter setups; carries full I_C + I_B and defines reference for V_BE(on) = 1.2 V.

Key Features

Feature	Design Value
Switching & amplification capability	Validated for both linear AF-driver stages and saturated low-power switching, enabling dual-role use in compact analog subsystems.
Complementary pairing	Designed as NPN counterpart to BC327/BC328 PNP transistors, supporting push-pull output stage implementation with matched thermal and gain characteristics.
TO-92 mechanical standardization	JEDEC-compliant TO-92 footprint ensures compatibility with legacy through-hole assembly lines and hand-soldering workflows.
Thermal derating support	R_θJA = 200 °C/W allows direct estimation of junction temperature rise (ΔT_J = P_D × R_θJA) for reliability validation on standard FR-4 PCBs.

Applications

Audio Amplifier Driver	Low-Voltage Switching Load
Use Scenario: Driving 8 Ω speaker loads in battery-powered portable audio devices with single-supply rails ≤ 12 V. IC Role / Device Role / Timing Role: NPN transistor configured in common-emitter mode to deliver up to 500 mA peak current with <0.7 V saturation drop. Use Value: Enables efficient Class-A/B output stage operation with minimal conduction loss and predictable h_FE-based biasing.	Use Scenario: Controlling LED arrays, relays, or small solenoids in industrial control panels powered by 5–12 V DC supplies. IC Role / Device Role / Timing Role: Saturated switch turning on/off loads using TTL- or microcontroller-compatible base drive. Use Value: Provides robust 800 mA I_C handling and fast turn-on with V_BE(on) = 1.2 V, reducing required base drive current.
Signal Level Shifting	Discrete Logic Interface
Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V domains in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Common-emitter level shifter with fixed emitter resistor and collector pull-up to higher rail. Use Value: Delivers clean voltage translation with defined V_CE(sat) and h_FE-stable gain, avoiding timing skew in digital control paths.	Use Scenario: Implementing simple OR/NOR logic functions or wired-AND bus interfaces in legacy hardware where IC logic gates are unavailable. IC Role / Device Role / Timing Role: Discrete transistor acting as active pull-down element in open-collector configurations. Use Value: Offers predictable V_CE(sat) and low leakage (ICES ≤ 100 nA), ensuring reliable logic state definition under varying temperature.

Audio Amplifier Driver

Low-Voltage Switching Load

Use Scenario: Driving 8 Ω speaker loads in battery-powered portable audio devices with single-supply rails ≤ 12 V.

IC Role / Device Role / Timing Role: NPN transistor configured in common-emitter mode to deliver up to 500 mA peak current with <0.7 V saturation drop.

Use Value: Enables efficient Class-A/B output stage operation with minimal conduction loss and predictable h_FE-based biasing.

Use Scenario: Controlling LED arrays, relays, or small solenoids in industrial control panels powered by 5–12 V DC supplies.

IC Role / Device Role / Timing Role: Saturated switch turning on/off loads using TTL- or microcontroller-compatible base drive.

Use Value: Provides robust 800 mA I_C handling and fast turn-on with V_BE(on) = 1.2 V, reducing required base drive current.

Signal Level Shifting

Discrete Logic Interface

Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V domains in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Common-emitter level shifter with fixed emitter resistor and collector pull-up to higher rail.

Use Value: Delivers clean voltage translation with defined V_CE(sat) and h_FE-stable gain, avoiding timing skew in digital control paths.

Use Scenario: Implementing simple OR/NOR logic functions or wired-AND bus interfaces in legacy hardware where IC logic gates are unavailable.

IC Role / Device Role / Timing Role: Discrete transistor acting as active pull-down element in open-collector configurations.

Use Value: Offers predictable V_CE(sat) and low leakage (ICES ≤ 100 nA), ensuring reliable logic state definition under varying temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC337-16 (ON Semi)	Same die, identical electrical specs; differs only in packaging format (bulk vs. ammo pack).	No functional difference; suitable for same circuit roles and PCB footprints.	Select BC33716TAR for automated SMT-style tape-and-reel feeding in high-volume production.
PN2222A (ON Semi)	Higher V_CEO = 40 V (vs. 45 V), lower h_FE min = 100 (same range), same TO-92 package and pinout.	Marginally reduced voltage headroom; otherwise interchangeable in most non-critical switching and amplification roles.	Choose PN2222A only if BC33716TAR is unavailable and design tolerates 5 V less V_CEO margin.

Compared with BC33716TAR, BC337-16 offers identical performance but different packaging logistics, while PN2222A trades 5 V V_CEO margin for broader industry familiarity-neither is pin-compatible by default, though both share TO-92 mechanical fit and pin assignment.

Availability

BC33716TAR is available at Aetrix Electronics and suitable for audio driver stages, low-voltage switching loads, signal level shifting, and discrete logic interface applications requiring stable component supply and JEDEC-standard through-hole compatibility.

Supply support for BC33716TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and discrete components for automotive, industrial, cloud computing, and consumer markets.

The BC33716TAR belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed for cost-effective, reliable switching and amplification in non-safety-critical commercial electronics.

FAQ

What is the maximum collector-emitter voltage rating for BC33716TAR?

The BC33716TAR has a maximum collector-emitter voltage (V_CEO) rating of 45 V under open-base conditions at T_A = 25°C. This value defines the upper limit for safe operation in switching applications; exceeding it risks avalanche breakdown. The BC33716TAR also specifies V_CES = 50 V with V_BE = 0, which applies when the base is shorted to emitter.

Does BC33716TAR have a specified current gain range, and how is it tested?

Yes, BC33716TAR is classified as h_FE group "16", meaning its DC current gain ranges from 100 to 250 when measured at V_CE = 1 V and I_C = 100 mA. A second gain band (h_FE2) of ≥60 is guaranteed at I_C = 300 mA. These values are verified per the official ON Semiconductor datasheet Rev. 1.5 and apply to every BC33716TAR unit.

What is the thermal resistance and power dissipation capability of BC33716TAR?

The BC33716TAR has a junction-to-ambient thermal resistance (R_θJA) of 200 °C/W on a standard FR-4 PCB (76 mm × 114 mm). Its maximum power dissipation is 625 mW at 25°C ambient, derating linearly by 5 mW/°C above that temperature. This means at 75°C ambient, BC33716TAR's usable P_D drops to 500 mW.

Is BC33716TAR compatible with BC337-16 in circuit design?

Yes, BC33716TAR is electrically and mechanically identical to BC337-16 - both share the same silicon die, TO-92 package, pinout, and full electrical specifications. The only difference is packaging: BC33716TAR is supplied in ammo packing, while BC337-16 may appear in bulk or tape-and-reel formats. No schematic or layout changes are needed when substituting BC33716TAR for BC337-16.

What are the absolute maximum ratings for base-emitter voltage and junction temperature of BC33716TAR?

The BC33716TAR has an absolute maximum emitter-base voltage (V_EBO) of 5 V and a maximum junction temperature (T_J) of 150°C. Exceeding V_EBO risks base-emitter junction damage, while sustained operation above T_J = 150°C degrades long-term reliability. Storage temperature range is –55°C to +150°C, matching the junction limit.

BC33716TAR Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 800 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 1V

Power - Max:: 625 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

BC33716TAR FAQ

1.How can I place an order for BC33716TAR through Aetrix?

Please submit a Request for Quotation (RFQ) for BC33716TAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC33716TAR reliable?

The price and inventory of BC33716TAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC33716TAR is usually 5 days.

3.What payment methods are accepted for BC33716TAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC33716TAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC33716TAR?

BC33716TAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC33716TAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC33716TAR?

For technical support, including BC33716TAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC33716TAR requirements.

6.How does Aetrix verify that BC33716TAR is sourced from the original manufacturer or authorized distributors?

All BC33716TAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC33716TAR meets industry standards.

7.What is the process for return or replacement of BC33716TAR?

All BC33716TAR units undergo pre-shipment inspection (PSI). If there is an issue with BC33716TAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC33716TAR part is unused and in its original packaging.

Return procedure for BC33716TAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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