NXP Semiconductors BC369,112

Overview

BC369,112 from NXP Semiconductors is a PNP medium power transistor in SOT54 (SC-43A) through-hole package, rated for −20 V V_CEO, −1 A continuous collector current, and 830 mW total power dissipation at T_amb ≤ 25 °C. It serves as a high-side switch or linear regulator pass element in industrial power management circuits.

For engineers reviewing the BC369,112 datasheet, BC369,112 pinout, BC369,112 application, or BC369,112 equivalent, key selection criteria include its −20 V V_CEO, −1 A I_C, h_FE range of 85–375 at I_C = −500 mA, V_CEsat ≤ −500 mV at I_C = −1 A / I_B = −100 mA, and thermal resistance R_th(j-a) = 150 K/W on standard FR4 PCB.

Technical Context

The BC369,112 operates as a silicon PNP bipolar junction transistor with fixed emitter-base and collector-base junctions optimized for medium-power linear and switching applications. Its DC current gain varies with operating point: minimum 85 at V_CE = −1 V and I_C = −500 mA, dropping to 60 at I_C = −1 A.

It exhibits a transition frequency f_T of 40–140 MHz at V_CE = −5 V and I_C = −50 mA, supporting audio-frequency amplification and fast-switching control. Saturation voltage remains ≤ −500 mV under heavy drive (I_C/I_B = 10), enabling efficient high-side switching in low-voltage supply rails.

Key Specifications

Pinout & Package

BC369,112 is housed in a plastic single-ended leaded (through-hole) SOT54 (SC-43A) package with 3 leads, compatible with TO-92 footprint. Standard mounting uses tin-plated copper on FR4 PCB per NXP's recommended footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium power transistor applications.

Compared with BC369,112, BC327,112 trades current capacity for higher voltage tolerance, while BC640,112 extends voltage range further but sacrifices saturation performance and gain spread-making BC369,112 the optimal balance for ≤20 V, ≤1 A linear and switching tasks requiring low-loss conduction.

Availability

BC369,112 is available at Aetrix Electronics and suitable for linear voltage regulators, high-side switches, and MOSFET drivers requiring stable component supply in industrial control, instrumentation, and embedded power management systems.

Supply support for BC369,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BC369,112 belongs to NXP's legacy discrete bipolar transistor product line, designed specifically for cost-sensitive, medium-power analog and power control functions in industrial and general-purpose electronics.

FAQ

What is the maximum collector-emitter voltage rating for BC369,112?

The BC369,112 has a maximum collector-emitter voltage (V_CEO) rating of −20 V with the base open. This rating defines the absolute upper limit for voltage applied between collector and emitter in normal operation. Exceeding −20 V risks permanent device failure. The BC369,112 is therefore best suited for circuits operating at or below 20 V supply rails, such as 12 V industrial controls or 5 V/12 V linear regulators.

Does BC369,112 have a specified peak collector current rating?

Yes, the BC369,112 has a peak collector current (I_CM) rating of −2 A. This value applies to short-duration pulsed operation and is distinct from the −1 A DC continuous rating. Designers may use this peak rating for transient load handling-such as motor startup surges or capacitor charging spikes-as long as pulse width, duty cycle, and thermal limits (e.g., junction temperature ≤ 150 °C) are respected per the datasheet's transient thermal resistance curve.

What is the typical DC current gain (h_FE) of BC369,112 at common operating points?

The BC369,112 exhibits h_FE = 85–375 at V_CE = −1 V and I_C = −500 mA, and drops to ≥60 at I_C = −1 A. At light loads (V_CE = −10 V, I_C = −5 mA), h_FE starts at ≥50. This wide gain spread means circuit designs must accommodate variation-especially in linear regulator feedback loops or precision current sources-using emitter degeneration or closed-loop compensation to maintain stability across the BC369,112 production lot.

Can BC369,112 be used as a direct replacement for BC369-16 or BC369-25?

No, BC369,112 is not a direct replacement for BC369-16 or BC369-25 due to differences in DC current gain specifications. While all three share identical package, voltage, and current ratings, BC369,112 has h_FE = 85–375, BC369-16 is binned 100–250, and BC369-25 is binned 160–375. Substituting across variants may cause bias point shifts in sensitive analog circuits-such as audio pre-amplifiers-requiring revalidation of quiescent operating points and gain stability for the BC369,112.

What is the thermal resistance from junction to ambient for BC369,112 on a standard PCB?

The BC369,112 has a junction-to-ambient thermal resistance (R_th(j-a)) of 150 K/W when mounted on a standard FR4 PCB with single-sided copper, tin-plated traces, and the recommended SOT54 footprint. This value assumes T_amb ≤ 25 °C. At higher ambient temperatures or with reduced copper area, thermal performance degrades-requiring derating per the published power derating curve. For example, at 70 °C ambient, maximum allowable P_tot drops to ~500 mW for safe BC369,112 operation.