onsemi BC369G

Overview

BC369G from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features V_CEO = −20 V, I_C = −1.0 A, P_D = 625 mW at T_A = 25°C, h_FE = 50–375 (depending on bias), and f_T = 65 MHz - enabling use in audio preamplifiers, relay drivers, and discrete logic interfaces.

For engineers reviewing the BC369G datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-92 package thermal limits (R_JA = 200°C/W), saturation voltage (V_CE(sat) ≤ −0.5 V at I_C/I_B = 10), DC gain range, and Pb-free compliance per J-STD-609.

Technical Context

The BC369G operates as a silicon PNP BJT with fixed-emitter configuration and base-controlled current amplification. Its electrical behavior is defined by three primary DC parameters: V_(BR)CEO = −20 V (IC = −10 mA), V_(BR)EBO = −5.0 V (IE = −100 µA), and h_FE ≥ 50 at V_CE = −10 V, I_C = −5 mA - confirming suitability for linear amplification and active-mode switching.

Thermal performance is constrained by R_JA = 200°C/W and R_JC = 83.3°C/W, requiring heatsinking or derating above 25°C ambient. The device exhibits f_T = 65 MHz at I_C = −10 mA, V_CE = −5.0 V, indicating usable bandwidth up to mid-VHF for small-signal stages.

Key Specifications

Pinout & Package

BC369G is housed in a through-hole TO-92 (Case 29, Style 14) package with standardized lead assignment: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. The package supports manual soldering and wave soldering per J-STD-020, with Pb-free termination (RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT amplification and switching applications.

Compared with BC369G, BC327-40 offers higher voltage tolerance and gain consistency but larger V_CE(sat), while MMBT3906LT1G delivers miniaturization and bandwidth at the cost of current capacity and thermal mass - making BC369G optimal for cost-sensitive, medium-power through-hole designs requiring proven thermal robustness.

Availability

BC369G is available at Aetrix Electronics and suitable for audio preamplifiers, relay driver circuits, discrete logic inverters, and current mirror references requiring stable component supply and long-term manufacturability.

Supply support for BC369G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, and consumer markets.

The BC369G belongs to onsemi's legacy general-purpose BJT product line, engineered for reliability, wide gain distribution, and compatibility with standard through-hole manufacturing - targeting cost-sensitive, high-volume applications where discrete transistor flexibility remains essential.

FAQ

What is the maximum collector-emitter voltage rating for BC369G?

The BC369G has a maximum collector-emitter voltage rating of V_(BR)CEO = −20 V at I_C = −10 mA and T_A = 25°C. This rating defines the absolute upper limit for reverse bias across the collector-emitter junction before avalanche breakdown occurs. Exceeding this value risks permanent device damage, especially under transient conditions or elevated temperatures.

Is BC369G suitable for switching applications, and what is its typical saturation voltage?

Yes, BC369G is commonly used in saturated switching applications such as relay drivers and logic level translation. Its typical V_CE(sat) is ≤ −0.5 V when I_C = −1.0 A and I_B = −100 mA, ensuring low conduction loss and minimal self-heating. This makes BC369G effective in medium-current, low-voltage DC switching where thermal management is critical.

What package type and lead configuration does BC369G use?

BC369G uses the TO-92 (Case 29, Style 14) through-hole package with Pb-free terminations. Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base - matching industry-standard orientation for PNP transistors in this family. This configuration is verified in the official onsemi package drawing and marked on the device body.

How does the DC current gain (h_FE) of BC369G vary with operating conditions?

The h_FE of BC369G ranges from 50 (min at V_CE = −10 V, I_C = −5 mA) to 375 (max at V_CE = −1.0 V, I_C = −1.0 A). Gain increases with collector current and decreases with rising junction temperature. Designers must consult Figure 1 in the BC368/D datasheet to select appropriate bias points for target gain stability across temperature and load.

Does BC369G meet RoHS requirements, and what does the 'G' suffix indicate?

Yes, BC369G complies with RoHS Directive 2011/65/EU. The 'G' suffix explicitly denotes a Pb-free (lead-free) variant with matte tin plating, conforming to J-STD-609 marking standards. This version replaces legacy leaded variants and is qualified for both reflow and wave soldering per IPC-J-STD-020.