Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BC556_J35Z

Part No.:
BC556_J35Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixBC556_J35Z.pdf
Description:
TRANS PNP 65V 0.1A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,313

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC556_J35Z from onsemi is a PNP epitaxial silicon transistor designed for general-purpose switching and linear amplification in low-to-medium power circuits, with confirmed VCEO = −65 V, IC = −100 mA DC, hFE = 110–800 (Class A/B/C), fT = 150 MHz, and TO-92-3 (Case 135AR) package. It serves as a complement to BC546–BC550 NPN devices in dual-polarity amplifier stages and discrete logic interfaces.

For engineers reviewing the BC556_J35Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, −65 V collector-emitter breakdown, low-noise capability (NF = 2–10 dB at 1 kHz), TO-92 mechanical compatibility, and RoHS-compliant Pb-free construction.

Technical Context

The BC556_J35Z operates as a medium-voltage, medium-current PNP bipolar junction transistor optimized for both saturated switching (VCE(sat) = −90 mV min at IC = −10 mA/IB = −0.5 mA) and active-mode amplification (hFE stable across IC = −0.1 to −100 mA). Its −80 V VCBO rating supports high-side switching in rail-referenced configurations.

Thermal performance is defined by RJA = 250 °C/W (FR-4 PCB, 76 mm × 114 mm), PD = 500 mW at TA = 25 °C with 4.0 mW/°C derating, and TJ = 150 °C maximum junction temperature - enabling reliable operation in ambient temperatures up to +85 °C with appropriate board layout.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −65 V: Enables use in −48 V telecom supplies and high-side switch nodes up to 65 V below ground reference.
IC (DC) −100 mA: Supports load switching and pre-driver stages for small-signal MOSFETs or relays without forced cooling.
hFE 110–800 (Class A/B/C): Allows flexible bias design - Class B (200–450) balances gain and consistency for audio preamps.
fT 150 MHz: Sufficient for RF front-end amplification up to VHF band (e.g., 30–100 MHz IF stages) under specified conditions.
NF 2–10 dB @ 1 kHz: Confirmed low-noise performance suitable for microphone preamplifiers and sensor signal conditioning.
Cob 6 pF @ VCB = −10 V: Limits Miller effect in high-gain common-emitter amplifiers; enables stable >10 MHz bandwidth.

Pinout & Package

BC556_J35Z is housed in TO-92-3 package (Case 135AR), with standardized leadform: lead 1 = Collector, lead 2 = Base, lead 3 = Emitter, viewed from flat side with leads down and marking facing outward.

Pin/Terminal Circuit Role Design Meaning
1 (Collector) Current sink node Connected to most negative potential in PNP configuration; handles full load current and must route away from sensitive analog traces.
2 (Base) Control input Receives forward-biased current to turn on device; requires series resistor to limit IB ≤ −200 mA pulse per datasheet.
3 (Emitter) Reference terminal Typically tied to system ground or positive rail; establishes VBE bias point and defines current mirror reference node.

Key Features

Feature Design Value
High-voltage PNP switching VCEO = −65 V enables direct replacement of older −50 V PNP transistors in legacy industrial controls.
Low-noise amplification NF = 2–10 dB at 1 kHz supports high-fidelity audio preamp stages without added op-amp complexity.
Complementary pairing Designed as direct PNP counterpart to BC546–BC550 NPN series, simplifying push-pull stage layout and biasing.
Pb-free & RoHS compliance Meets EU RoHS Directive 2011/65/EU and halogen-free requirements for modern consumer and medical electronics.

Applications

Audio Pre-amplifier Stage Discrete Logic Level Shifter

Use Scenario: Amplifying low-level signals from electret microphones or piezoelectric sensors before ADC sampling.

IC Role / Device Role / Timing Role: PNP common-emitter voltage amplifier with emitter-degeneration bias for stable gain and low distortion.

Use Value: Achieves 2–10 dB noise figure and >100 kHz bandwidth while operating from single-supply rails (e.g., +5 V with emitter at VCC).

Use Scenario: Translating 3.3 V logic outputs to −5 V or −12 V control lines in mixed-voltage industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated PNP switch pulling output low when base driven high relative to emitter rail.

Use Value: Delivers −65 V VCEO margin and −90 mV VCE(sat) to ensure clean logic transitions with <100 ns propagation delay.

High-Side Power Switch Current Mirror Reference

Use Scenario: Controlling LED arrays or solenoid drivers referenced to positive supply rails in automotive body electronics.

IC Role / Device Role / Timing Role: High-side PNP switch with emitter tied to VCC, collector driving load to ground.

Use Value: Supports −100 mA continuous load current and withstands load dump transients up to −65 V without clamping diodes.

Use Scenario: Establishing matched bias currents in discrete op-amp or comparator input stages requiring thermal tracking.

IC Role / Device Role / Timing Role: One transistor in a monolithic-matched pair configuration (with BC556_J35Z variant or same batch).

Use Value: hFE tolerance (±10% within same hFE class) and identical TO-92 thermal mass enable <0.5% current mismatch at ΔT ≤ 5 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC557BTA VCEO = −45 V (lower than BC556_J35Z's −65 V); otherwise identical hFE, fT, and package. Suitable where system rail voltages remain ≤ −36 V; not recommended for −48 V telecom or industrial −60 V bus designs. Select BC557BTA only if voltage margin is relaxed and cost sensitivity favors higher-volume BC557 variants.
BC856B, SOT-23 Same electrical specs (VCEO = −65 V, hFE = 200–450), but surface-mount SOT-23-3 package instead of through-hole TO-92. Enables high-density PCB layouts and automated assembly; lacks TO-92 mechanical robustness for prototyping or vibration-prone environments. Choose BC856B when board space is constrained and reflow compatibility is required; retain BC556_J35Z for hand-soldered prototypes or serviceable modules.

Compared with BC557BTA and BC856B, BC556_J35Z provides the highest voltage safety margin among through-hole PNP transistors in its family and remains the preferred choice for legacy-compatible designs requiring −65 V rating and TO-92 mechanical fit.

Availability

BC556_J35Z is available at Aetrix Electronics and suitable for industrial control panels, audio signal conditioning circuits, and discrete logic interface modules requiring stable component supply and long-term obsolescence management.

Supply support for BC556_J35Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BC556_J35Z belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability in cost-sensitive, high-volume applications such as power supplies, audio equipment, and industrial automation interfaces.

FAQ

What is the maximum collector-emitter voltage rating for BC556_J35Z?

The BC556_J35Z has a guaranteed VCEO rating of −65 V at TA = 25 °C, as specified in the Absolute Maximum Ratings table of the official onsemi datasheet (Rev. 3, June 2024). This rating applies to DC operation and defines the upper limit for safe collector-to-emitter reverse bias before breakdown. Exceeding this voltage risks permanent device failure.

Is BC556_J35Z RoHS compliant and lead-free?

Yes, BC556_J35Z is explicitly marked Pb-free, halogen-free/BFR-free, and RoHS compliant per the onsemi datasheet. The device uses lead-free termination finishes and complies with Directive 2011/65/EU, making it suitable for environmentally regulated end products including medical and consumer electronics.

What is the pin configuration of BC556_J35Z in TO-92-3 package?

When viewing the BC556_J35Z TO-92-3 package (Case 135AR) with the flat side facing you and leads pointing downward, the pin order from left to right is: Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter. This matches the marking diagram and mechanical outline drawings in the official onsemi documentation.

Does BC556_J35Z support low-noise audio applications?

Yes, BC556_J35Z is characterized for low-noise operation with a noise figure (NF) of 2–10 dB at 1 kHz, VCE = −5 V, IC = −200 µA, and RG = 2 kΩ - confirming suitability for microphone preamplifiers and sensor signal conditioning where signal integrity is critical.

How does BC556_J35Z differ from BC557 in practical circuit design?

BC556_J35Z offers −65 V VCEO versus BC557's −45 V, making it mandatory for −48 V telecom or industrial −60 V bus applications. Both share identical TO-92-3 packaging and hFE classification ranges, but BC556_J35Z's higher voltage rating eliminates need for external protection components in high-rail designs.

BC556_J35Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
65 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Power - Max:
500 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

BC556_J35Z FAQ

1.How can I place an order for BC556_J35Z through Aetrix?

Please submit a Request for Quotation (RFQ) for BC556_J35Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC556_J35Z reliable?

The price and inventory of BC556_J35Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC556_J35Z is usually 5 days.

3.What payment methods are accepted for BC556_J35Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC556_J35Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC556_J35Z?

BC556_J35Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC556_J35Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC556_J35Z?

For technical support, including BC556_J35Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC556_J35Z requirements.

6.How does Aetrix verify that BC556_J35Z is sourced from the original manufacturer or authorized distributors?

All BC556_J35Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC556_J35Z meets industry standards.

7.What is the process for return or replacement of BC556_J35Z?

All BC556_J35Z units undergo pre-shipment inspection (PSI). If there is an issue with BC556_J35Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC556_J35Z part is unused and in its original packaging.

Return procedure for BC556_J35Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC556_J35Z Tags

  • BC556_J35Z
  • BC556_J35Z PDF
  • BC556_J35Z Datasheet
  • BC556_J35Z Specifications
  • BC556_J35Z Images
  • onsemi
  • onsemi BC556_J35Z
  • Buy BC556_J35Z
  • BC556_J35Z Price
  • BC556_J35Z Distributor
  • BC556_J35Z Supplier
  • BC556_J35Z Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER